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AlGaInN-based LED having thick epitaxial layer for improved light extraction

  • US 6,133,589 A
  • Filed: 06/08/1999
  • Issued: 10/17/2000
  • Est. Priority Date: 06/08/1999
  • Status: Expired due to Term
First Claim
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1. An AlGaInN light-emitting diode device comprising:

  • a substrate; and

    a multi-layered epitaxial structure having an active region coupled to said substrate, said multi-layered epitaxial structure including a first region of epitaxial layers that is positioned above said active region and a second region of epitaxial layers that is positioned below said active region, said epitaxial layers of said first and second regions including a plurality of epitaxial layers that are composed of at least one element selected from a group consisting of aluminum, gallium, indium, and nitrogen, said multi-layered epitaxial structure having a thickness of at least four micrometers, said thickness of said multi-layered epitaxial structure effectuating an increased extraction of light emitted from said active region through sides of said multi-layered epitaxial structure.

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