AlGaInN-based LED having thick epitaxial layer for improved light extraction

• US 6,133,589 A
• Filed: 06/08/1999
• Issued: 10/17/2000
• Est. Priority Date: 06/08/1999
• Status: Expired due to Term

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.), Philips Lumileds Lighting Company LLC (Apollo Global Management, Inc.)
• Original Assignee: Lumileds Lighting US LLC (Apollo Global Management, Inc.)
• Inventors: Krames, Michael Ragan, Martin, Paul Scott, Tan, Tun Sein
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US09/328,870
• Time in Patent Office: 497 Days
• Field of Search: 257/103
• US Class Current: 257/103
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: Y10S 438/964 Roughened surface

Abstract

A light-emitting diode (LED) and a method of making the device utilize a thick multi-layered epitaxial structure that increases the light extraction efficiency of the device. The LED is an aluminum-gallium-indium-nitride (AlGaInN)-based LED. The thick multi-layered epitaxial structure increases the light extraction efficiency of the device by increasing the amount of emitted light that escapes the device through the sides of the thick multi-layered epitaxial structure. The LED includes a substrate, a buffer layer, and the thick multi-layered epitaxial structure. In the preferred embodiment, the substrate is a sapphire substrate having a textured surface. The textured surface of the substrate randomized light impinges the textured surface, so that an increased amount of emitted light may escape the LED as output light. The multi-layered epitaxial structure includes an upper AlGaInN region, an active region, and a lower AlGaInN region. The upper and lower AlGaInN regions include multiple epitaxial layers of AlGaInN. The upper AlGaInN region is made of p-type AlGaInN epitaxial layers, while the lower AlGaInN region is made of n-type AlGaInN epitaxial layers and undoped epitaxial layers. The undoped epitaxial layers may be layers of AlGaInN or other AlGaInN-based material. The multi-layered epitaxial structure has an approximate thickness of 4 micrometers or greater. In one embodiment, the thickness of the multi-layered epitaxial structure is approximately 7 micrometers. In another embodiment, the thickness of the multi-layered epitaxial structure is approximately 15 micrometers.

Claims

1. An AlGaInN light-emitting diode device comprising:

a substrate; and

a multi-layered epitaxial structure having an active region coupled to said substrate, said multi-layered epitaxial structure including a first region of epitaxial layers that is positioned above said active region and a second region of epitaxial layers that is positioned below said active region, said epitaxial layers of said first and second regions including a plurality of epitaxial layers that are composed of at least one element selected from a group consisting of aluminum, gallium, indium, and nitrogen, said multi-layered epitaxial structure having a thickness of at least four micrometers, said thickness of said multi-layered epitaxial structure effectuating an increased extraction of light emitted from said active region through sides of said multi-layered epitaxial structure.

2. The device of claim 1 wherein said multi-layered epitaxial structure is configured such that said multi-layered epitaxial structure has a thickness of at least seven micrometers.

3. The device of claim 1 wherein said multi-layered epitaxial structure is configured such that said multi-layered epitaxial structure has a thickness of approximately seven micrometers.

4. The device of claim 1 wherein said multi-layered epitaxial structure is configured such that said multi-layered epitaxial structure has a thickness of at least fifteen micrometers.

5. The device of claim 1 wherein said second region of said multi-layered epitaxial structure has a thickness greater than three micrometers.

6. The device of claim 1 wherein said second region of said multi-layered epitaxial structure has a thickness greater than seven micrometers.

7. The device of claim 1 wherein said second region of said epitaxial layers includes at least one undoped epitaxial layer, said undoped epitaxial layer being made of aluminum-gallium-indium-nitride-based material.

8. The device of claim 1 wherein said substrate is configured such that said surface of said substrate that is coupled to said multi-layered epitaxial structure is a textured surface, said textured surface of said substrate facilitating a randomization of light that impinges upon said textured surface.

9. An AlGaInN light-emitting diode device comprising:

a substrate;

a first region of undoped epitaxial layers positioned adjacent to said substrate, said undoped epitaxial layers being composed of at least one element selected from a group consisting of aluminum, gallium, indium, and nitrogen;

an n-type region of n-type epitaxial layers coupled to said first region, said n-type epitaxial layers being composed of at least one element selected from a group consisting of aluminum, gallium, indium, and nitrogen;

an optoelectronic active region coupled to said n-type region; and

a p-type region of p-type epitaxial layers coupled to said active region, said p-type epitaxial layers being composed of at least one element selected from a group consisting of aluminum, gallium, indium, and nitrogen,

wherein said first region, said n-type region, said active region, and said p-type region have a total thickness of at least four micrometers, said total thickness effectuating an increased extraction of light emitted from said active region through sides of said light-emitting diode device.

10. The device of claim 9 wherein said first region, said n-type region, said active region, and said p-type region are configured such that said total thickness is at least seven micrometers.

11. The device of claim 9 wherein said first region, said n-type region, said active region, and said p-type region are configured such that said total thickness is at least fifteen micrometers.

12. The device of claim 9 wherein said first region of said undoped epitaxial layers is configured such that said first region has a thickness greater than three micrometers.

13. The device of claim 9 wherein said first region of said undoped epitaxial layers is configured such that said first region has a thickness greater than seven micrometers.

14. The device of claim 9 wherein said substrate is configured such that said surface of said substrate that is coupled to said first region is a textured surface, said textured surface of said substrate facilitating a randomization of said emitted light that impinges upon said textured surface.