Method and apparatus for improving accuracy of plasma etching process
First Claim
1. A method of etching openings in a semiconductor substrate in a plasma chamber, comprising steps of:
- supporting a semiconductor substrate on a substrate support in a plasma chamber, the semiconductor substrate including a masking layer and openings in the masking layer containing a material to be etched;
etching the material in the openings of the masking layer by generating an etching plasma in the plasma chamber;
measuring a thickness of the masking layer prior to etching of the material in the openings in the masking layer;
controlling duration of the etching step to achieve a target etch depth relative to an underside of the masking layer;
extinguishing the etching plasma when the target etch depth of the openings is obtained; and
removing the substrate from the chamber.
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Abstract
The invention provides a process and apparatus for improving the accuracy of plasma etching processes such as trench and recess etch processes. In such processes, a trench or recess is etched into a layer of material which does not have a stop layer at the desired depth of the etched openings. Instead, the etching process is carried out for a set time period calculated to achieve a desired etch depth on the basis of measured or estimated etching rates. For example, the duration of etching to achieve a target depth may be based on statistical analysis or real-time measurements of etch depths by interferometry. However, use of estimated etching rates or interferometry to control when etching should be terminated to achieve a desired etch depth can result in defective structures due to etched openings which are too deep or too shallow. According to the invention, a technique is provided for controlling the etching process in a manner which achieves more accurate etch depths in a more reproducible way by conducting a masking layer thickness measurement as part of the etching process.
48 Citations
9 Claims
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1. A method of etching openings in a semiconductor substrate in a plasma chamber, comprising steps of:
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supporting a semiconductor substrate on a substrate support in a plasma chamber, the semiconductor substrate including a masking layer and openings in the masking layer containing a material to be etched; etching the material in the openings of the masking layer by generating an etching plasma in the plasma chamber; measuring a thickness of the masking layer prior to etching of the material in the openings in the masking layer; controlling duration of the etching step to achieve a target etch depth relative to an underside of the masking layer; extinguishing the etching plasma when the target etch depth of the openings is obtained; and removing the substrate from the chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification