Display device with silicon-containing adhesion layer

• US 6,137,214 A
• Filed: 11/01/1999
• Issued: 10/24/2000
• Est. Priority Date: 02/23/1998
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Raina, Kanwal K.
• Primary Examiner(s): Patel, Nimeshkumar D.
• Assistant Examiner(s): Santiago, Mariceli
• Application Number:
  US09/431,015
• Time in Patent Office: 358 Days
• Field of Search: 313/309, 313/311, 313/336, 313/351, 313/293, 313/296, 313/495, 313/496, 313/497
• US Class Current: 313/309
• CPC Class Codes: H01J 3/022 with microengineered cathode, e.g. Spindt-type
• CPC Class Codes: H01J 31/127 using large area or array sources, i.e. essentially a source for each pixel group
• CPC Class Codes: H01J 9/025 of field emission cathodes

Abstract

A field emission device having a gate electrode structure in which a nanocrystalline or microcrystalline silicon layer is positioned over a silicon dioxide dielectric layer. Also disclosed are methods for forming the field emission device. The nanocrystalline or microcrystalline silicon layer forms a bond with the dielectric layer that is sufficiently strong to prevent delamination during a chemical-mechanical planarization operation that is conducted during formation of the field emission device. The nanocrystalline or microcrystalline silicon layer is deposited by PECVD in an atmosphere that contains silane and hydrogen at a ratio in a range from about 1:15 to about 1:40. Multiple field emission devices may be formed and included in a flat panel display for computer monitors, telecommunications devices, and the like.

Claims

1. An apparatus for producing a visual display, said apparatus comprising:

a substrate;

a dielectric layer over said substrate;

a gate electrode structure including a silicon adhesion layer on said dielectric layer, said silicon adhesion layer being substantially composed of a material selected from the group consisting of nanocrystalline silicon and microcrystalline silicon;

an array of apertures, each extending through said silicon adhesion layer and said dielectric layer;

an array of electron emission structures for emitting electrons upon application of an electric field thereto, each of said electron emission structures being positioned over said substrate and within one of said apertures; and

a display panel over said array of electron emission devices for emitting light in response to electrons emitted from said electron emission structures.

2. An electron emission apparatus as defined in claim 1, wherein said silicon adhesion layer is substantially composed of undoped silicon.

3. An electron emission apparatus as defined in claim 1, wherein said adhesion layer has a mean grain size in a range from 200 Å

to 1,000 Å

.

4. An apparatus as defined in claim 1, wherein said display panel includes phospholuminescent material for emitting said light upon being excited by said electrons.

5. An apparatus as defined in claim 1, further comprising a cathode structure under said gate electrode structure.

6. An apparatus as defined in claim 5, wherein:

said gate electrode structure includes a plurality of conductive lines;

said cathode structure includes a plurality of conductive columns; and

each of said electron emission structures has an address defined by one conductive column of said plurality of conductive columns and one conductive line of said plurality of conductive lines.

7. An apparatus as defined in claim 1, wherein said substrate comprises glass.

8. An apparatus as defined in claim 7, wherein said glass is soda-lime glass.

9. An electron emission apparatus as defined in claim 1, wherein each said electron emission structure projects away from said substrate and tapers to an apex.

10. An apparatus as defined in claim 1, wherein said display panel comprises phospholuminescent material.

11. An apparatus for producing a visual display, said apparatus comprising:

a substrate;

a dielectric layer over said substrate;

a gate electrode structure including;

silicon adhesion layer on said dielectric layer, said silicon adhesion layer being composed of a material selected from the group consisting of nanocrystalline silicon and microcrystalline silicon; and

a gate conductive layer on said silicon adhesion layer, said gate conductive layer including phosphorus-doped amorphous silicon;

an array of apertures, each extending through said silicon adhesion layer, said dielectric layer, and said gate conductive layer;

an array of electron emission structures for emitting electrons upon application of an electric field thereto, each of said electron emission structures being positioned over said substrate and within one of said apertures; and

a display panel over said array of electron emission devices for emitting light in response to electrons emitted from said electron emission structures.

12. An electron emission apparatus as defined in claim 11, further comprising an anode plate positioned over both of said gate conductive layer and said array of electron emission structures, said anode plate being separated from both of said gate conductive layer and said array of electron emission structures by a vacuum, said anode plate having:

an anode conductive layer;

a phospholuminescent material; and

a transparent panel.

13. An apparatus as defined in claim 12, further comprising:

a cathode conductive layer; and

an electrically resistive layer on said cathode conductive layer and under said dielectric layer.

14. An apparatus as defined in claim 13, wherein said cathode conductive layer comprises a metal selected from the group consisting of chromium, aluminum, and alloys thereof.

15. An apparatus as defined in claim 13, wherein said electrically resistive layer comprises boron-doped amorphous silicon.

16. An apparatus for producing a visual display, said apparatus comprising:

a substrate;

a dielectric layer over said substrate;

a gate electrode structure including;

silicon adhesion layer on said dielectric layer, said silicon adhesion layer being composed of a material selected from the group consisting of nanocrystalline silicon and microcrystalline silicon; and

a gate conductive layer on said silicon adhesion layer, said gate conductive layer including phosphorus-doped amorphous silicon;

a gate metal layer including a metal selected from the group comprising chromium, aluminum, and alloys thereof, said gate metal layer being positioned on said gate conductive layer;

a passivation layer including silicon nitride, said passivation layer being positioned on said gate metal layer;

an array of apertures, each extending through said silicon adhesion layer, said dielectric layer, and said gate conductive layer;

an array of electron emission structures for emitting electrons upon application of an electric field thereto, each of said electron emission structures being positioned over said substrate and within one of said apertures; and

a display panel over said array of electron emission devices for emitting light in response to electrons emitted from said electron emission structures.

17. An apparatus as defined in claim 16, wherein:

said silicon adhesion layer has a thickness in a range from about 500 Å

to about 1,500 Å

; and

said gate conductive layer has a thickness in a range from about 5,000 Å

to about 7,000 Å

.

18. An electron emission apparatus as defined in claim 16, wherein said silicon adhesion layer is substantially composed of undoped silicon.

19. An electron emission apparatus as defined in claim 16, wherein said adhesion layer has a mean grain size in a range from 200 Å

to 1,000 Å

.

20. An apparatus as defined in claim 16, wherein said display panel includes phospholuminescent material for emitting said light upon being excited by said electrons.

21. An apparatus as defined in claim 16, further comprising a cathode structure under said gate electrode structure.

22. An apparatus as defined in claim 21, wherein:

said gate electrode structure includes a plurality of conductive lines;

said cathode structure includes a plurality of conductive columns; and

each of said electron emission structures has an address defined by one conductive column of said plurality of conductive columns and one conductive line of said plurality of conductive lines.

23. An apparatus as defined in claim 16, wherein said substrate comprises glass.

24. An apparatus as defined in claim 23, wherein said glass is soda-lime glass.

25. An electron emission apparatus as defined in claim 16, wherein each said electron emission structure projects away from said substrate and tapers to an apex.

26. An apparatus as defined in claim 16, wherein said display panel comprises phospholuminescent material.