Embedded energy storage device

• US 6,137,671 A
• Filed: 01/29/1998
• Issued: 10/24/2000
• Est. Priority Date: 01/29/1998
• Status: Expired due to Fees

• Current Assignee: Energenius, Inc.
• Original Assignee: Energenius, Inc.
• Inventors: Staffiere, Donald T.
• Primary Examiner(s): Kincaid, Kristine
• Assistant Examiner(s): Thomas, Eric W.
• Application Number:
  US09/015,735
• Time in Patent Office: 999 Days
• Field of Search: 361/301.1, 361/301.2, 361/301.4, 361/303, 361/750, 361/763, 361/764, 361/311, 361/312, 361/313, 361/320, 361/321.1, 361/321.2, 361/321.3, 361/321.4 , 361/321.5, 361/328-330
• US Class Current: 361/311
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01M 6/40 Printed batteries , e.g. thin film batteries
• CPC Class Codes: H05K 1/0298 Multilayer circuits
• CPC Class Codes: H05K 1/16 incorporating printed electric components, e.g. printed resistor, capacitor, inductor
• CPC Class Codes: H05K 1/162 incorporating printed capacitors
• CPC Class Codes: H05K 2201/0175 Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
• CPC Class Codes: H05K 2201/0179 Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
• CPC Class Codes: H05K 2201/09309 Core having two or more power planes; Capacitive laminate of two power planes
• CPC Class Codes: H05K 2201/09318 Core having one signal plane and one power plane
• CPC Class Codes: H05K 2201/09509 Blind vias, i.e. vias having one side closed
• CPC Class Codes: H05K 2201/10037 Printed or non-printed battery

Abstract

The present invention is directed towards an embedded electrical storage device in a layered electrical device, such as a printed circuit board or integrated circuit chip. An electrical energy storage device, having an outer surface, is embedded in the layered electrical device, either partially or fully is formed of at least two electrical conducting layers sandwiching a high capacity dielectric, and is connected to other circuitry on the layered electrical device. This arrangement may be used in numerous applications including use as storage and filter capacitors for power conditioning.

Claims

1. An energy storage device at least partially embedded within a layered electrical device, wherein the layered electrical device has a top exterior surface and a bottom exterior surface, the energy storage device comprising:

a dielectric material; and

a first and second electrical storage conducting layer, wherein the dielectric material lies between and contacts the electrical storage conducting layers;

wherein the dielectric material exists between the exterior surfaces of the layered electrical device and the first or second electrical storage conducting layer comprise a plurality of electrical conducting elements connected to different voltages.

2. The energy storage device of claim 1 wherein the layered electrical device is a circuit board.

3. The energy storage device of claim 2 wherein the layered electrical device further comprises at least one circuit conducting layer electrically connected to one of the electrical storage conducting layers.

4. The energy storage device of claim 3, wherein the circuit conducting layer is contained within the top and bottom exterior surfaces of the circuit board.

5. The energy storage device of claim 1, wherein the layered electrical device further comprises at least one circuit conducting layer electrically connected to one of the electrical storage conducting layers.

6. The energy storage device of claim 5, wherein the circuit conducting layer comprises at least a portion of either the top or bottom exterior surface of the layered electrical device.

7. The energy storage device of claim 1 wherein the dielectric material has a dielectric constant of at least 50.

8. The energy storage device of claim 1 wherein the dielectric material is of the formula Ba_a Ti_b O_c wherein a and b are independently between 0.75 and 1.25 and c is between about 2.5 and about 5.0.

9. The energy storage device of claim 1 wherein the dielectric material is of the formula M_d Ba_a Ti_b O_c wherein "M" is Au, Cu, Ni₃ Al, Ru, or InSn, a and b are independently between 0.75 and 1.25, c is between about 2.5 and about 5.0, and d is between 0.01 and 0.25.

10. The energy storage device of claim 1 wherein either the first or second electrical storage conducting layers acts as a thermal heat sink.

11. The energy storage device of claim 1 wherein the energy storage device is a capacitor.

12. The energy storage device of claim 1 wherein the energy storage device is a battery.

13. The energy storage device of claim 1 wherein the layered electrical device is an integrated circuit chip.

14. The energy storage device of claim 13, wherein the integrated circuit chip further comprises at least one circuit conducting layer electrically connected to one of the electrical storage conducting layers.

15. The energy storage device of claim 13, wherein the first and second electrical storage conducting layers are contained within the top and bottom exterior surfaces of the integrated circuit chip.

16. The energy storage device of claim 13 wherein the dielectric material has a dielectric constant of at least 50.

17. The energy storage device of claim 13 wherein the dielectric material is of the formula Ba_a Ti_b O_c wherein a and b are independently between 0.75 and 1.25 and c is between about 2.5 and about 5.0.

18. The energy storage device of claim 13 wherein the dielectric material is of the formula M_d Ba_a Ti_b O_c, wherein "M" is Au, Cu, Ni₃ Al, Ru, or InSn, a and b are independently between 0.75 and 1.25, c is between about 2.5 and about 5.0 and d is between 0.01 and 0.25.

19. The energy storage device of claim 13 wherein either of the electrical storage conducting layers is also a thermal heat sink.

20. The energy storage device of claim 13 wherein either of the electrical storage conducting layers acts as a thermal heat sink.

21. The energy storage device of claim 13 wherein the energy storage device is a backup power source.

48. The electrical circuit assembly of claim 4 wherein the circuit conducting layer is contained within the top and bottom exterior surfaces of the circuit board.

22. A circuit board comprising:

a top exterior surface and a bottom exterior surface;

at least one energy storage device comprising;

a dielectric material; and

a first and a second electrical storage conducting layers, wherein the dielectric material lies between and contacts the first and second electrical storage conducting layers;

wherein the energy storage device is at least partially embedded between the top exterior surface and bottom exterior surface of the circuit board; and

further wherein the first or second electrical storage conducting later has more than one electrically conducted element connected to different voltages or, having different capacitor values tied to the same voltage.

23. The circuit board of claim 22 wherein the dielectric material has a dielectric constant of at least 50.

24. The circuit board of claim 22 wherein the dielectric material has a dielectric constant of at least 100.

25. The circuit board of claim 22, wherein the circuit board further comprises at least one circuit conducting layer, the circuit conducting layer residing outside of the at least one energy storage device.

26. The circuit board of claim 25 wherein at least one of the electrical conducting layers is electrically connected to the circuit conducting layer.

27. The circuit board of claim 25 wherein at least one of the circuit conducting layers comprises at least a portion of one of the exterior surfaces.

28. The circuit board of claim 22 wherein the dielectric material is of formula the Ba_a Ti_b O_c wherein a and b are independently between 0.75 and 1.25 and c is between about 2.5 and about 5.0.

29. The circuit board of claim 22 wherein the dielectric material is of the formula M_d Ba_a Ti_b O_c, wherein "M" is Au, Cu, Ni₃ Al, Ru, or InSn, a and b are independently between 0.75 and 1.25, c is between about 2.5 and about 5.0, and d is between 0.01 and 0.25.

30. The circuit board of claim 22 wherein the second electrical storage conducting layer is also a thermal heat sink.

31. The circuit board of claim 22 wherein the second electrical conducting layer is common to the at least one electrical storage device at least partially embedded in the board.

32. The circuit board of claim 22 wherein the at least one energy storage device is a capacitor.

33. The circuit board of claim 22 wherein the at least one energy storage device is a battery.

34. An integrated circuit chip comprising:

a top exterior surface and a bottom exterior surface;

at least one energy storage device comprising;

a dielectric material; and

a first and a second electrical storage conducting layer, wherein the dielectric material lies between and contacts the first and second electrical storage conducting layers;

wherein the energy storage device is embedded between the top exterior surface and bottom exterior surface of the integrated circuit chip; and

the first or second electrical conducing layer comprises a plurality of electrical conducting elements connected to different voltages.

35. The integrated chip of claim 34, wherein the integrated circuit chip further comprises at least one circuit conducting layer which is exterior to the energy storage device.

36. The integrated circuit chip of claim 35 wherein at least one of the electrical storage conducting layers is electrically connected to said at least one circuit conducting layer.

37. The integrated circuit chip of claim 34 wherein the dielectric material has a dielectric constant of at least 50.

38. The integrated circuit chip of claim 34 wherein the dielectric material has a dielectric constant of at least 100.

39. The integrated circuit chip of claim 34 wherein the dielectric material is of the formula Ba_a Ti_b O_c wherein a and b are independently between 0.75 and 1.25 and c is between about 2.5 and about 5.0.

40. The integrated circuit chip of claim 34 wherein the dielectric material is of the formula M_d Ba_a Ti_b O_c, wherein "M" is Au, Cu, Ni₃ Al, Ru, or InSn, a and b are independently between 0.75 and 1.25, c is between about 2.5 and about 5.0, and d is between 0.01 and 0.25.

41. The integrated circuit chip of claim 34 wherein the second electrical storage conducting layer is also a thermal heat sink.

42. The integrated circuit chip of claim 34 wherein the second electrical conducting layer is common to all the electrical storage devices embedded within the integrated circuit chip.

43. The integrated circuit chip of claim 34 wherein the at least one energy storage device is a capacitor.

44. The integrated circuit chip of claim 34 wherein the at least one energy storage device is a battery.

45. An electrical circuit assembly having multiple energy storage device components which are at least partially embedded within a layered electrical device, wherein the layered electrical device has a top exterior surface and a bottom exterior surface, the energy storage device components comprising:

a dielectric material; and

first and second electrical storage conducting layers, wherein the dielectric material lies between and contacts the electrical storage conducting layers;

wherein the dielectric material exists between the exterior surfaces of the layered electrical device; and

wherein the first or second electrical storage conducting layer has more than one electrically conducted element connected to different voltages or having different capacitor values tied to the same voltage.

46. The electrical circuit assembly of claim 45 wherein the layered electrical device is a circuit board.

47. The electrical circuit assembly of claim 46 wherein the layered electrical device further comprises at least one circuit conducting layer electrically connected to one of the electrical storage conducting layers.

49. The electrical circuit assembly of claim 45 wherein the layered electrical device further comprises at least one circuit conducting layer electrically connected to one of the electrical storage conducting layers.

50. The electrical circuit assembly of claim 49 wherein the circuit conducting layer comprises at least a portion of either the top or bottom exterior surface of the layered electrical device.

51. The electrical circuit assembly of claim 45 wherein the dielectric material has a dielectric constant of at least 50.

52. The electrical circuit assembly of claim 45 wherein the dielectric material is of the formula Ba_a Ti_b O_c wherein a and b are independently between 0.75 and 1.25 and c is between about 2.5 and about 5.0.

53. The electrical circuit assembly of claim 45 wherein the dielectric material is of the formula M_d Ba_a Ti_b O_c wherein "M" is Au, Cu, Ni₃ Al, Ru, or InSn, a and b are independently between 0.75 and 1.25, c is between about 2.5 and about 5.0, and d is between 0.01 and 0.25.

54. The electrical circuit assembly of claim 45 wherein either the first or second electrical storage conducting layers acts as a thermal heat sink.

55. The electrical circuit assembly of claim 45 wherein the energy storage device components function as at least one capacitor.

56. The electrical circuit assembly of claim 45 wherein the energy storage components function as a backup power source.