Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility

• US 6,138,606 A
• Filed: 04/13/1998
• Issued: 10/31/2000
• Est. Priority Date: 08/14/1995
• Status: Expired due to Fees

• Current Assignee: Amer-China, Inc.
• Original Assignee: Advanced Materials Engineering Research, Inc. (Eurofins Scientific SE)
• Inventors: Ling, Peiching
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): Hassanzadeh, Parviz
• Application Number:
  US09/059,532
• Time in Patent Office: 932 Days
• Field of Search: 118/715, 118/723 FI, 118/723 E, 315/111.81, 315/111.21, 315/116, 315/117, 313/359, 313/360, 313/361, 313/362, 313/363, 313/36, 313/240, 313/217, 313/209, 250/423 R, 204/298.04, 204/298.05, 204/298.06, 204/298.13
• US Class Current: 118/723.00E
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: H01J 2237/08 Ion sources
• CPC Class Codes: H01J 2237/31701 Ion implantation
• CPC Class Codes: H01L 21/0415 using ion implantation
• CPC Class Codes: H01L 21/2236 from or into a plasma phase
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/2656 characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/167 further characterised by the doping material H01L29/1604 takes precedence
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

An ion source apparatus is disclosed in this invention. The ion source apparatus includes an anode having an interior space for containing a plasma and an opening into the space. The ion source apparatus further includes a hollow cathode within the space. The ion source apparatus further includes a dopant ion-source composed of compounds comprising element selected from a group of elements consisting of silicon and germanium, the dopant ion-source disposed next to the space. The ion source apparatus further includes a voltage means connected to the anode, the hollow cathode, and the dopant ion source for discharging a plasma into the space for bombarding the dopant ion source for generating a dopant ion compound. The ion source apparatus further includes an ion-beam extracting means for extracting the dopant ion compound through the opening. In an alternate preferred embodiment, the ion source apparatus employs an electron beam device to generate the dopant ion compound. In yet another preferred embodiment, the ion source apparatus employs an ion beam device for generating the dopant ion compound.

Claims

1. An ion source apparatus comprising:

an anode having an interior space for containing a plasma and an opening into said space;

a hollow cathode within said space;

a dopant ion-source composed of compounds comprising at least one element selected from a group of elements consisting of silicon and germanium, said dopant ion-source disposed next to said space;

a voltage means connected to said anode, said hollow cathode, and said dopant ion source for discharging a plasma into said space for bombarding said dopant ion source for generating a dopant ion compound;

an ion-beam extracting means for extracting said dopant ion compound comprising at least one element selected from a group of elements consisting of silicon and germanium through said opening.

2. The ion source apparatus of claim 1 wherein:

said anode and said cathode with said voltage means are formed as an ion source of a magnetron type with said dopant ion source disposed immediate next to an electrode of said hollow cathode.

3. The ion source apparatus of claim 1 wherein:

said dopant ion-source is a p-type dopant ion-source.

4. The ion source apparatus of claim 1 wherein:

said dopant ion-source is a n-type dopant ion-source.

5. The ion source apparatus of claim 1 wherein:

said dopant ion-source is a solid dopant ion-source.

6. The ion source apparatus of claim 3 wherein:

said dopant ion-source is a B_x Ge_y dopant ion-source where x and y are real numbers.

7. The ion source apparatus of claim 3 wherein:

said dopant ion-source is a B_x Si_y dopant ion-source where x and y are real numbers.

8. The ion source apparatus of claim 4 wherein:

said dopant ion-source is a P_x Ge_y dopant ion-source where x and y are real numbers.

9. The ion source apparatus of claim 4 wherein:

said dopant ion-source is a P_x Si_y dopant ion-source where x and y are real numbers.

10. The ion source apparatus of claim 4 wherein:

said dopant ion-source is a As_x Ge_y do pant ion-source where x and y are real numbers.

11. The ion source apparatus of claim 4 wherein:

said dopant ion-source is a As_x Si_y dopant ion-source where x and y are real numbers.

12. The ion source apparatus of claim 3 wherein:

said dopant ion-source is a composite dopant ion-source defined by A_x C_y wherein A representing an acceptor and C representing an element forming a solid solution in a substrate with a solid solubility higher than a solid solubility of a fluorine ion in said substrate, and x and y are real numbers.

13. The ion source apparatus of claim 3 wherein:

said dopant ion-source is a composite dopant ion-source defined by A_x C_y wherein A representing an acceptor and A_x C_y representing a compound of A_x Si_y1 Ge_y2 where x, y1 and y2 are real numbers.

14. The ion source apparatus of claim 3 wherein:

said dopant ion-source is a composite dopant ion-source defined by A_x C_y wherein A representing an acceptor and A_x C_y representing a compound of B_x Si_y where x and y are real numbers.