×

Ion implanters for implanting shallow regions with ion dopant compounds containing elements of high solid solubility

  • US 6,138,606 A
  • Filed: 04/13/1998
  • Issued: 10/31/2000
  • Est. Priority Date: 08/14/1995
  • Status: Expired due to Fees
First Claim
Patent Images

1. An ion source apparatus comprising:

  • an anode having an interior space for containing a plasma and an opening into said space;

    a hollow cathode within said space;

    a dopant ion-source composed of compounds comprising at least one element selected from a group of elements consisting of silicon and germanium, said dopant ion-source disposed next to said space;

    a voltage means connected to said anode, said hollow cathode, and said dopant ion source for discharging a plasma into said space for bombarding said dopant ion source for generating a dopant ion compound;

    an ion-beam extracting means for extracting said dopant ion compound comprising at least one element selected from a group of elements consisting of silicon and germanium through said opening.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×