Low temperature integrated via and trench fill process and apparatus
First Claim
1. A method of forming a feature on a substrate, comprising:
- a) depositing a barrier layer over the surfaces of an aperture, the barrier layer having a thickness of between about 5 and about 700 Angstroms;
b) chemical vapor depositing copper over the surface of the barrier layer without capping the aperture, the chemical vapor deposited copper having a thickness of between about 200 Angstroms and about 1 micron;
c) physical vapor depositing copper over the chemical vapor deposited copper at a temperature below about 660°
C. so that the physical vapor deposited copper and chemical vapor deposited copper substantially fill the aperture.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention relates generally to an improved process for providing complete via fill on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer, such as CVD Al or CVD Cu, is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD Cu. Next, a PVD Cu is deposited onto the previously formed CVD Cu layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD Cu layer is substantially void-free. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the vias and contacts occurs without the formation of an oxide layer over the CVD Cu layer. The via fill process of the present invention is also successful with air-exposure between the CVD Cu and PVD Cu steps.
145 Citations
18 Claims
-
1. A method of forming a feature on a substrate, comprising:
-
a) depositing a barrier layer over the surfaces of an aperture, the barrier layer having a thickness of between about 5 and about 700 Angstroms; b) chemical vapor depositing copper over the surface of the barrier layer without capping the aperture, the chemical vapor deposited copper having a thickness of between about 200 Angstroms and about 1 micron; c) physical vapor depositing copper over the chemical vapor deposited copper at a temperature below about 660°
C. so that the physical vapor deposited copper and chemical vapor deposited copper substantially fill the aperture. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A process for filling an aperture on a substrate, comprising:
-
a) forming a thin first layer over the surfaces of an aperture; b) forming a thin conformal chemical vapor deposited copper layer over the first layer without substantially capping the aperture; and c) forming a physical vapor deposited copper layer over the chemical vapor deposited copper layer, wherein the physical vapor deposited copper is deposited at a temperature less than about 660°
C. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
-
Specification