Method of fabricating load resistor
First Claim
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1. A method of forming a load resistor, comprising:
- providing a substrate having at least a conductive region;
forming an insulation layer on the substrate with an opening exposing the conductive region;
forming a refractory metal oxide layer on the insulation layer and to fill the opening;
performing a two-step hydrogen treatment to convert a first part of the refractory metal oxide layer into a conductor with a first resistance, and to convert a second part of the refractory metal oxide layer into a conductor with a second resistance, wherein the two-step hydrogen treatment includes a first step for converting the first part and a second step for converting the second part.
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Abstract
A method of fabricating a load resistor. The load resistor is often applied in a static random access memory. The interconnect between different conductive regions such as gate and source/drain region is formed by applying a hydrogen treatment to a refractory metal oxide layer, while the load resistors are formed by applying a hydrogen treatment with different parameters as the former one. The insulation is formed by the refractory metal oxide layer which is not to be covered.
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Citations
22 Claims
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1. A method of forming a load resistor, comprising:
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providing a substrate having at least a conductive region; forming an insulation layer on the substrate with an opening exposing the conductive region; forming a refractory metal oxide layer on the insulation layer and to fill the opening; performing a two-step hydrogen treatment to convert a first part of the refractory metal oxide layer into a conductor with a first resistance, and to convert a second part of the refractory metal oxide layer into a conductor with a second resistance, wherein the two-step hydrogen treatment includes a first step for converting the first part and a second step for converting the second part. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a load resistor, comprising:
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providing a substrate having at least a conductive region; forming an insulation layer with an opening exposing the conductive region; forming a refractory metal oxide layer on the insulation layer to fill the opening; removing a part of the refractory metal oxide layer; converting a first remaining part of the refractory metal oxide layer into a conductor with a high resistance; and converting a second remaining part of the refractory metal oxide into a conductor with a low resistance. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method of forming a load resistor, comprising:
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providing a substrate having at least a conductive region; forming an insulation layer with an opening exposing the conductive region; forming a refractory metal oxide layer on the insulation layer to fill the opening; removing a part of the refractory metal oxide layer; performing a first hydrogen treatment to the remaining refractory metal oxide layer; and performing a second hydrogen treatment to a part of the refractory metal oxide layer. - View Dependent Claims (17, 18, 19, 20)
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21. A method of forming a load resistor of a static random access memory, comprising:
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providing a substrate having at least a metal-oxide semiconductor device which comprises a source/drain region and a gate; forming an insulation layer with openings exposing the gate and the source/drain region; forming a refractory metal oxide layer on the insulation layer and to fill the openings; performing a first step of a hydrogen treatment with a first mask to convert a first part of the refractory metal oxide layer into a first conductor with a first conductivity; and performing a second step of the hydrogen treatment with a second mask to convert a second part of a refractory metal oxide layer into a second conductor with a second conductivity, while a third part of the refractory metal oxide layer may remain as an insulator without being converted. - View Dependent Claims (22)
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Specification