Micromechanical sensor

• US 6,140,689 A
• Filed: 12/21/1998
• Issued: 10/31/2000
• Est. Priority Date: 11/22/1996
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Siemens AG
• Inventors: Hierold, Christofer, Scheiter, Thomas, Naher, Ulrich
• Primary Examiner(s): Whitehead, Jr., Carl
• Assistant Examiner(s): BROPHY, JAMIE LYNN
• Application Number:
  US09/202,837
• Time in Patent Office: 680 Days
• Field of Search: 29/25.42, 216/2, 216/56, 257/414-416, 257/347, 257/350, 257/417-420, 361/283.1, 361/283.4, 438/53
• US Class Current: 257/414
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: H04R 19/005 using semiconductor materials

Abstract

In a relative pressure sensor or miniaturized microphone as a micromechanical sensor component, a polysilicon membrane is arranged over a polysilicon membrane of an SOI substrate. A recess that is connected to the cavity between the membrane and the body silicon layer by openings in the body silicon layer is present in the substrate on the back side. Given an excursion of the membrane, a pressure equalization can therefore occur in the cavity as a result of these openings. The measurement occurs capacitatively by electrical connection of the electrically conductively doped membrane and a doped region formed in the body silicon layer.

Claims

1. A micromechanical sensor, comprising:

a SOI substrate with a silicon body layer, insulation layer, and bulk silicon layer;

a spacer layer and a membrane layer thereon on the silicon body layer, a portion of the spacer layer being removed so that a cavity is formed between a membrane of the membrane layer and the silicon body layer;

at least said membrane of the membrane layer being designed to be electrically conductive;

a doped region formed in the silicon body layer beneath the cavity;

a material of the insulation layer and a material of the bulk silicon layer being removed;

so that a recess is present thereat; and

the silicon body layer comprising openings, said openings connecting said recess with said cavity between the membrane and the doped region.

2. The sensor according to claim 1 wherein the membrane layer is designed to be electrically conductive.

3. The sensor according to claim 1 wherein the membrane layer is provided with an electrically conductive layer and a corresponding contact for electrical connection.

4. The sensor according to claim 1 whereby components of an electronic circuit for operation of the sensor are integrated in the silicon body layer.

5. The sensor according to claim 1 wherein in order to form a relative pressure sensor, a further sensor is present on the substrate as a reference sensor, at least a part of the spacer layer also being present in said further sensor in a region of a membrane layer forming the membrane of the further sensor and which prevents an excursion of the membrane.

6. A micromechanical sensor, comprising:

a silicon body layer, insulation layer, and bulk silicon layer as a layer stack;

a spacer layer and an electrically conductive membrane layer structure thereon on the silicon body layer, a portion of the spacer layer being removed so that a cavity is formed between the membrane layer structure and the silicon body layer;

a doped region formed in the silicon body layer structure beneath the cavity;

material of the insulation layer and material of the bulk silicon layer being removed beneath the doped region to form a recess; and

the silicon body layer comprising openings connecting said cavity with the recess.