In-situ measurement method and apparatus for semiconductor processing

• US 6,140,833 A
• Filed: 11/16/1998
• Issued: 10/31/2000
• Est. Priority Date: 11/16/1998
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG, International Business Machines Corporation, Siemens AG
• Original Assignee: Siemens AG
• Inventors: Muller, K. Paul, Flietner, Bertrand
• Primary Examiner(s): Metjahic, Safet
• Assistant Examiner(s): SUNDARAM, T R
• Application Number:
  US09/192,698
• Time in Patent Office: 715 Days
• Field of Search: 324/765, 324/73.1, 324/763, 324/754, 324/537, 324/158.1
• US Class Current: 324/750.3
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633

Abstract

A measurement device for in-situ measurement of processing parameters, in accordance with the present invention, includes a semiconductor wafer having at least one processed chip formed thereon. The processed chip further includes at least one sensor for measuring process parameters. A memory storage device for storing the process parameters as the process parameters are measured by the at least one sensor is also included. A timing device is provided for tracking the process parameters as a function of time, and a power supply is included for providing power to the at least one sensor, the memory storage device and the timing device. Also, a method is described for making measurements with the measurement device.

Claims

1. A measurement device for in-situ measurement of processing parameters, comprising:

a semiconductor wafer having at least one processed chip formed thereon;

the processed chip for performing in-situ measurements of processing parameters, the processed chip further comprising;

at least one sensor for measuring the process parameters;

a memory storage device for storing the process parameters as the process parameters are measured by the at least one sensor;

a timing device for tracking the process parameters as a function of time; and

a power supply for providing power to the at least one sensor, the memory storage device and the timing device.

2. The measurement device as recited in claim 1, wherein the at least one sensor includes a plurality of sensors distributed across the semiconductor wafer.

3. The measurement device as recited in claim 1, wherein the at least one sensor includes a plurality of sensors positioned at predetermined locations on the semiconductor wafer.

4. The measurement device as recited in claim 1, wherein the process parameters include temperature.

5. The measurement device as recited in claim 1, wherein the process parameters include at least one of radiation, voltage and charge current.

6. The measurement device as recited in claim 1, wherein the memory storage device includes an electrically erasable programmable read only memory (EEPROM).

7. The measurement device as recited in claim 1, wherein the at least one sensor includes a p-n junction device.

8. The measurement device as recited in claim 1, wherein the power supply is powered by an external light source.

9. The measurement device as recited in claim 1, wherein the measurement device further comprises a processor for managing device functions.

10. A measurement device for in-situ measurement of processing parameters, comprising:

a semiconductor wafer having at least one processed chip formed thereon;

the processed chip for performing in-situ measurements of processing parameters, the processed chip further comprising;

sensors for measuring the process parameters;

a memory storage device for storing process parameter data as the process parameters are measured by the sensors;

a timing device for tracking the process parameters as a function of time; and

a power supply for providing power to the at least one sensor, the memory storage device and the timing device;

the semiconductor wafer including an interface mounted thereon for retrieving the process parameter data from the memory storage device.

11. The measurement device as recited in claim 10, wherein the sensors are distributed across the semiconductor wafer.

12. The measurement device as recited in claim 10, wherein the sensors are positioned at predetermined locations on the semiconductor wafer.

13. The measurement device as recited in claim 10, wherein the process parameters include temperature.

14. The measurement device as recited in claim 10, wherein the process parameters include at least one of radiation, voltage and charge current.

15. The measurement device as recited in claim 10, wherein the memory storage device includes an electrically erasable programmable read only memory (EEPROM).

16. The measurement device as recited in claim 10, wherein the sensors include a p-n junction device.

17. The measurement device as recited in claim 10, wherein the power supply is powered by an external light source.

18. The measurement device as recited in claim 10, wherein the measurement device further comprises a processor for managing device functions.

19. A method for measuring process parameters during a semiconductor fabrication process comprising the steps of:

providing a semiconductor wafer having at least one processed chip formed thereon, the processed chip for performing in-situ measurements of processing parameters, the processed chip further including at least one sensor for measuring the process parameters, a memory storage device for storing the process parameters as the process parameters are measured by the at least one sensor, a timing device for tracking the process parameters as a function of time and a power supply for providing power to the at least one sensor, the memory storage device and the timing device;

securing the wafer in a processing chamber;

subjecting the wafer to a process to be tested;

storing process parameter data according to the measured process parameters in the memory storage device during the duration of the process to be tested; and

retrieving the process parameter data.

20. The method as recited in claim 19 wherein the process parameters include temperature.

21. The method as recited in claim 20, further comprises the step of measuring temperature with a resolution of about 0.1 degree Celsius.

22. The method as recited in claim 19 wherein the process parameters include at least one of radiation, voltage and charge currents.