Semiconductor integrated circuit having a logic verifying structure and method of manufacturing the same

• US 6,144,084 A
• Filed: 02/27/1998
• Issued: 11/07/2000
• Est. Priority Date: 02/27/1997
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Sanada, Masaru
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US09/031,542
• Time in Patent Office: 984 Days
• Field of Search: 257/443
• US Class Current: 257/443
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor integrated circuit having a logic verification structure includes a logic circuit formed by CMOS structure on a semiconductor substrate, in which the semiconductor integrated circuit has an impurity region irradiated by a laser beam from a back of the semiconductor substrate, for testing the logic circuit, achieving a simple logic analysis.

Claims

1. A semiconductor integrated circuit having a logic verification structure, comprising:

a logic circuit formed of a CMOS structure on a semiconductor substrate of a first conductive type; and

, an impurity region formed on the semiconductor substrate, the impurity region being of a second conductive type opposite to the first conductive type to provide only one pn junction between the impurity region and a back surface of the semiconductor substrate, wherein the impurity region is connected with an output wiring of the logic circuit but independent from the logic circuit, wherein the pn junction is irradiated by a laser beam from the back surface of the semiconductor substrate to generate an electron-hole pair, an electron of which pair is supplied from the impurity region to the output wiring to reveal a logic state of the logic circuit.

2. A semiconductor integrated circuit according to claim 1, wherein the impurity region has a conductive type different from that of the semiconductor substrate and is electronically independent from a semiconductor device region forming a source voltage clamping region and the logic circuit.

3. A semiconductor integrated circuit according to claim 2, wherein the impurity region is aligned and arranged on a predetermined area on the semiconductor substrate and is connected to an output portion of the logic circuit to be tested through a pattern wiring.

4. A semiconductor integrated circuit according to claim 3, wherein the impurity region is connected the pattern wiring through a contact hole provided on the impurity region.

5. A semiconductor integrated circuit according to claim 4, wherein the impurity region is connected to the pattern wiring through the contact hole and coated by the pattern wiring.

6. A semiconductor integrated circuit according to claim 5, wherein the impurity region is aligned and arranged with a pitch similar to that of the pattern wiring formed on the semiconductor substrate.

7. A semiconductor integrated circuit according to claim 6, wherein the pattern wiring comprises an electronic circuit and is independent from the electronic circuit.

8. A semiconductor integrated circuit according to claim 7, wherein the pattern wiring connected to the impurity region through the contact hole is connected to an upper-layered pattern wiring intersecting at the pattern wiring.

9. A semiconductor integrated circuit according to claim 8, wherein the predetermined area on the semiconductor substrate is provided within a wiring area of the pattern wiring located between cell group regions where a cell group as semiconductor devices comprising a basic logic circuit is aligned and arranged.

10. A semiconductor integrated circuit according to claim 8, wherein the predetermined area on the semiconductor substrate is dispersedly provided between the cell groups within the cell group region.

11. A semiconductor integrated circuit according to claim 8, wherein the predetermined area on the semiconductor substrate occupies a specific area in the semiconductor substrate.

12. A semiconductor integrated circuit having a logic verification structure including a logic circuit formed of a CMOS structure on a semiconductor substrate, comprising:

a semiconductor substrate having a first conductive type;

an impurity region formed on the semiconductor substrate, the impurity region having a second conductive type opposite to the first conductive type to provide only one pn junction between the impurity region and a back surface of the semiconductor substrate, wherein the impurity region is electrically connected with an output wiring of the logic circuit but independent from the logic circuit;

an insulation film formed on the semiconductor substrate and the impurity region;

a contact hole formed on the impurity region by opening the insulation film;

a pattern wiring formed on the insulation film and the contact hole;

a signal pattern wiring formed above the pattern wiring, a part of which is overlapped with the signal pattern wiring;

wherein in the pn junction generates an electron-hole pair upon being irradiated with a laser beam, an electron of which pair is supplied from the impurity region to the output wiring to reveal the logic circuit in logic state.

13. A semiconductor integrated circuit according to claim 12, wherein the contact is a logic detecting pattern for detecting a photo excitation current.

14. A semiconductor integrated circuit according to claim 12, wherein the semiconductor substrate has an n-type conductive substrate.

15. A semiconductor integrated circuit according to claim 12, wherein the semiconductor substrate has a p-type conductive substrate.

16. A semiconductor integrated circuit according to claim 12, wherein the pattern wiring is connected with the signal pattern wiring by irradiating a laser beam.

17. A semiconductor integrated circuit according to claim 12, wherein the pattern wiring is connected with the signal pattern wiring by a mechanical compression.