Method for laser scanning flip-chip integrated circuits

• US 6,146,014 A
• Filed: 11/04/1998
• Issued: 11/14/2000
• Est. Priority Date: 11/04/1998
• Status: Expired due to Fees

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Bruce, Michael R., Bruce, Victoria J.
• Primary Examiner(s): Gutierrez, Diego
• Assistant Examiner(s): PRUCHNIC, STANLEY J
• Application Number:
  US09/187,314
• Time in Patent Office: 741 Days
• Field of Search: 374/161, 374/130, 374/4-7, 374/120
• US Class Current: 374/161
• CPC Class Codes: G01J 5/0003 for sensing the radiant heat transfer of samples, e.g. emittance meter
• CPC Class Codes: G01K 11/00 Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
• CPC Class Codes: G01N 25/72 Investigating presence of flaws

Abstract

Methods for analyzing temperature characteristics of an integrated circuit. In one embodiment, a beam of laser light is directed at the back side of an integrated circuit. The intensity level of laser light reflected from the integrated circuit is measured and compared to a reference intensity level. The magnitude of the difference between the reference intensity level and the intensity level of the reflected laser light is indicative of a temperature characteristic of the integrated circuit.

Claims

1. A method for analyzing temperature characteristics of an integrated circuit having internal circuitry in a region opposite a back side, comprising:

directing a beam of laser light at a back side of the integrated circuit;

measuring an intensity level of laser light reflected from a target region including the circuitry in the integrated circuit; and

comparing the intensity level with a reference intensity level and, in response, obtaining a temperature characteristic of the integrated circuit.

2. The method of claim 1, wherein comparing the intensity level with a reference intensity level and, in response, obtaining a temperature characteristic of the integrated circuit includes detecting a magnitude of difference between the reference intensity level and the intensity level of the reflected laser light.

3. The method of claim 1, wherein the laser light is generated from a near-infrared type laser.

4. The method of claim 1, wherein an angle of incidence of the beam of laser light the integrated circuit is substantially perpendicular.

5. The method of claim 1, wherein an angle of incidence of the beam of laser light with the integrated circuit is between about 30°

and 45°

.

6. A method for analyzing temperature characteristics of an integrated circuit, comprising:

directing laser light at a back side of a first integrated circuit having internal circuitry in a target region opposite the back side;

establishing a reference intensity level from laser light reflected from the target region including circuitry in the first integrated circuit;

directing laser light at a back side of a second integrated circuit having internal circuitry in a target region opposite the back side;

establishing a second intensity level from the laser light reflected from the target region including circuitry in the second integrated circuit; and

comparing the reference intensity level to the second intensity level, whereby a magnitude of difference between the reference and second intensity levels indicates a temperature characteristic for the second integrated circuit relative to the first integrated circuit.

7. The method of claim 6,

wherein the step of establishing the reference intensity level comprises steps (a)-(c);

(a) measuring a first intensity level of laser light directed at a target region having circuitry via the back side of a first integrated circuit and reflected therefrom, the first integrated circuit being in a first state;

(b) measuring a second intensity level of laser light directed at a target region having circuitry via the back side of a first integrated circuit and reflected therefrom, the first integrated circuit being in a second state; and

(c) establishing a first delta value of the difference between the first intensity level and the second intensity level associated with the first integrated circuit; and

wherein the step of establishing the second intensity level comprises steps (d)-(f);

(d) measuring a first intensity level of laser light directed at a target region having circuitry via the back side of a second integrated circuit and reflected therefrom, the second integrated circuit being in a first state;

(e) measuring a second intensity level of laser light directed at a target region having circuitry via the back side of a second integrated circuit and reflected therefrom, the second integrated circuit being in a second state; and

(f) establishing a first delta value of the difference between the first intensity level and the second intensity level associated with the second integrated circuit.

8. The method of claim 7, wherein the first state for the first and second integrated circuits comprises no power applied to the first and second integrated circuits, and the second state for the first and second integrated circuits comprises a selected power level applied to the first and second integrated circuits.

9. The method of claim 7, wherein the laser light is generated from a near-infrared type laser.

10. The method of claim 6, wherein an angle of incidence of the beam of laser light with surfaces of the first and second integrated circuits is substantially perpendicular.

11. The method of claim 6, wherein an angle of incidence of the beam of laser light with surfaces of the substrates is between about 30°

and 45°

.

12. A method for analyzing temperature characteristics of an integrated circuit, comprising:

(a) scanning a first integrated circuit with a beam of laser light, the first integrated circuit being in a state in which no power is applied;

(b) measuring a first intensity level of laser light reflected from a target region having circuitry in the first integrated circuit;

(c) supplying voltage and current to the first integrated circuit;

(d) running a selected series of test vectors on the first integrated circuit;

(e) measuring a second intensity level of laser light reflected from the target region having circuitry in the first integrated circuit;

(f) establishing a delta value of a difference between the first and second intensity levels;

repeating steps (a)-(f) using a second integrated circuit instead of the first integrated circuit;

comparing the delta value of the first integrated circuit to the delta value of the second integrated circuit whereby a magnitude of difference between the delta values indicates a temperature characteristic for the second integrated circuit relative to the first integrated circuit.

13. The method of claim 12, wherein the laser light is generated from a near-infrared type laser.

14. The method of claim 12, wherein an angle of incidence of the beam of laser light with the first and second integrated circuits is substantially perpendicular.

15. The method of claim 12, wherein an angle of incidence of the beam of laser light with the first and second integrated circuits is between approximately 30°

and 45°

.

16. The method of claim 12, further comprising placing a cover over the substrate the electronic circuit to reduce diffusion of heat generated by the circuit.

17. The method of claim 12, wherein the beam of laser light is directed at back sides of the first and second integrated circuits.

18. A method for analyzing circuitry in an integrated circuit device having internal circuitry in a region opposite a back side, the method comprising:

directing a beam of laser light at a target region including the circuitry via a back side of the integrated circuit device; and

detecting a temperature characteristic of the integrated circuit device as a function of laser light reflected from the target region; and

analyzing the integrated circuit device based upon said temperature characteristic.

19. A system for analyzing circuitry in an integrated circuit die having internal circuitry in a region opposite a back side, the system comprising:

means for directing a beam of laser light at a target region including the circuitry via a back side of the integrated circuit;

means for detecting a temperature characteristic of the integrated circuit as a function of laser light that is reflected from the target region; and

means for analyzing the integrated circuit based upon said temperature characteristic.

20. A system for analyzing temperature characteristics of an integrated circuit die having internal circuitry in a region opposite a back side, comprising:

a laser source configured to direct a beam of laser light at a target region including the circuitry via a back side of the integrated circuit;

a detector arrangement configured to detect a temperature characteristic of the integrated circuit as a function of laser light that is reflected from the target region; and

an analyzer for analyzing the integrated circuit based upon said temperature characteristic.

21. The system of claim 20, wherein the laser source is adapted to generate near-infrared laser light.

22. The system of claim 20, wherein the laser source includes a laser scanning microscope.

23. The system of claim 20, wherein the detector arrangement includes an IR microscope.

24. The system of claim 20, wherein the detector arrangement includes a comparator adapted to compare an intensity level of the reflected laser light to a reference intensity level.

25. The system of claim 20, further comprising a power supply adapted to apply selected electrical test patterns to the integrated circuit die.