Method of formation of buried mirror semiconductive device
First Claim
1. A method for forming a semiconductor device for reflecting electromagnetic radiation having a wavelength X, the method comprising the steps of:
- forming an opening in a semiconductor substrate;
depositing at least one reflective layer in the opening;
removing the at least one reflective layer such that the at least one reflective layer is substantially coplanar with the substrate; and
forming a semiconductor layer so as to overlie the at least one reflective layer.
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Accused Products
Abstract
A method for forming a buried optical mirror in an integrated circuit (IC) begins by forming an opening (18) within a substrate (12). The opening (18) is then filled with a plurality of dielectric layers (20-26) that have different indexes of refraction whereby a Bragg reflector can be formed. A chemical mechanical polishing (CMP) process is then used to planarize the layers (20-26) such that these layers (20-26) only reside within the opening (18) whereby a mirror is formed. Lateral selective epitaxial growth, polysilicon deposition and recrystallization, or wafer bonding is then used to form a single crystalline or near single crystalline semiconductive material (32b) over a top of the substrate (12) and the reflecting mirror. Photodevice(s) are then formed over the mirror in the region (28) of material (32b) whereby reflecting mirror (20-26) will improve the quantum efficiency and speed of the photodevice(s).
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Citations
22 Claims
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1. A method for forming a semiconductor device for reflecting electromagnetic radiation having a wavelength X, the method comprising the steps of:
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forming an opening in a semiconductor substrate; depositing at least one reflective layer in the opening; removing the at least one reflective layer such that the at least one reflective layer is substantially coplanar with the substrate; and forming a semiconductor layer so as to overlie the at least one reflective layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for forming a semiconductor device for reflecting electromagnetic radiation having wavelength λ
- , the method comprising the steps of;
forming an opening in a semiconductor substrate; depositing at least two reflective layers including a first reflective layer and a second reflective layer in the opening, the first reflective layer having a first index of refraction and the second reflective layer having a second index of refraction, wherein the first index of refraction is different from the second index of refraction; polishing portions of the at least two reflective layers such that the at least two reflective layer are substantially coplanar with the substrate; forming a single-crystalline silicon layer so as to overlie the at least one reflective layer; and forming a photo device on a portion of the single-crystalline silicon layer overlying the at least two reflective layers.
- , the method comprising the steps of;
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17. A method for forming a semiconductor device for reflecting electromagnetic radiation having wavelength X, the method comprising the steps of:
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forming at least one reflective layer on a semiconductor substrate, the at least one reflective layer having sidewalls defining an outer periphery of the at least one reflective layer; forming sidewall spacers along the outer periphery of the at least one reflective layer; and forming a semiconductive layer on the semiconductor substrate so as to surround the sidewalls of the at least one reflective layer; removing the sidewall spacers; processing the semiconductive layer to form an improved semiconductive layer; and growing semiconductive material from the improved semiconductive layer so as to overlie the at least one reflective layer. - View Dependent Claims (18, 19, 20)
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21. A method for forming a semiconductor device for reflecting electromagnetic radiation having a wavelength X, the method comprising the steps of:
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depositing a stack of reflective layers on a substrate wafer, wherein alternating layers of the stack have different indices of refraction; and forming a semiconductor material to the substrate wafer, such that the stack of reflective layers lies between the substrate wafer and the semiconductor material to form a silicon on insulator wafer that has a reflective buried insulator layer comprised of the stack of reflective layers. - View Dependent Claims (22)
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Specification