Thin-film transistor monolithically integrated with an organic light-emitting diode

• US 6,150,668 A
• Filed: 09/08/1999
• Issued: 11/21/2000
• Est. Priority Date: 05/29/1998
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Bao, Zhenan, Katz, Howard Edan, Rogers, John A., Dodabalapur, Ananth, Raju, Venkataram Reddy
• Primary Examiner(s): Jackson, Jr., Jerome
• Assistant Examiner(s): BAUMEISTER, BRADLEY W
• Application Number:
  US09/391,729
• Time in Patent Office: 440 Days
• Field of Search: 257/40, 257/72, 257/59, 257/99, 313/503, 313/504
• US Class Current: 257/40
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/125 including organic TFTs [OTFT]
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/114 Poly-phenylenevinylene; Derivatives thereof
• CPC Class Codes: H10K 85/60 Organic compounds having low molecular weight H10K85/10 - H10K85/50 take precedence

Abstract

A device in which one or more thin film transistors are monolithically integrated with a light emitting diode is disclosed. The thin film transistor has an organic semiconductor layer. The light emitting layer of the light emitting diode is also an organic material. The device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting diode on the substrate and by employing low cost fabrication techniques.

Claims

1. A device comprising a light emitting diode monolithically integrated with at least one thin film transistor wherein the light emitting diode comprises an anode, a cathode and at least one active layer comprising a light-emitting material sandwiched between the anode and the cathode and the thin film transistor comprises a gate and a semiconductor material interposed between source and drain contacts such that a current that flows from the source to the drain flows through the semiconductor material from the source to the drain, wherein the thin film transistor and the light emitting diode are formed on a single, unitary substrate, wherein the semiconductor material of the thin film transistor and at least one active layer of the light emitting diode is an organic material and one of either the anode or the cathode of the light emitting diode and the gate of the thin film transistor are the same material and are formed on a common surface.

2. The device of claim 1 wherein the active layer further comprises a layer of a charge carrying material.

3. The device of claim 2 wherein the semiconductor material of the thin film transistor and the charge carrying material of the light emitting diode are the same material.

4. The device of claim 3 wherein the charge carrying material is a hole transporter material.

5. The device of claim 4 wherein the charge carrying material and the semiconductor material are selected from the group consisting of oligothiophene, pentacene, Di-R-anthradithiophene wherein R is either C_m H_2m+1 wherein m is 0 to 18 or C_y H_2y+1 OC_z H_2z where z+y=4 to 17, y is greater than zero, and z is greater than 2, bis-benzodithiophene, phthalocyanine coordination compounds, and regioregular poly(3-alkylthiophene).

6. The device of claim 3 wherein at least one of the source and drain contacts is electrically connected to the anode.

7. The device of claim 6 wherein the substrate is a transparent substrate and the gate of the thin film transistor and the anode of the light emitting diode are indium tin oxide.

8. The device of claim 7 wherein the transparent substrate material is selected from the group consisting of glass, polyester, and polyimide.

9. The device of claim 8 wherein a plurality of thin film transistors is monolithically integrated with the light emitting diode.

10. The device of claim 1 wherein the anode of the light emitting diode and the gate of the thin film transistor are the same material and are formed on the substrate surface.