Monolithic flow sensor and pressure sensor
First Claim
Patent Images
1. An integrated circuit sensor comprising:
- a diaphragm having first and second sides in contact with first and second spaces, respectively;
a sensing element on said diaphragm; and
a channel extending from said first space to a position providing gas flow to said second space, said channel having a cross-section which is a fraction of an area of said diaphragm.
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Abstract
A monolithic, integrated circuit sensor combining both a differential pressure sensor and a flow sensor on the same silicon chip. The integrated circuit has a diaphragm with a number of piezo-resistive elements placed on it in the normal manner for a pressure sensor. In addition, a channel is provided between the spaces on the two sides of the diaphragm. The channel has a cross-section which is a fraction of the size of the diaphragm. In one embodiment, the channel is a hole in the diaphragm. In another embodiment, the channel is an etched groove in the frame supporting the diaphragm.
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Citations
10 Claims
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1. An integrated circuit sensor comprising:
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a diaphragm having first and second sides in contact with first and second spaces, respectively; a sensing element on said diaphragm; and a channel extending from said first space to a position providing gas flow to said second space, said channel having a cross-section which is a fraction of an area of said diaphragm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An integrated circuit sensor comprising:
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a diaphragm having first and second sides in contact with first and second spaces, respectively; a plurality of piezoresistive elements on said diaphragm; a channel extending from said first space to a position providing gas flow to said second space, said channel having a cross-section which is a fraction of an area of said diaphragm; a frame supporting said diaphragm; and a temperature compensation circuit, coupled to said piezoresistive elements, for compensation for flow measurements; wherein said channel comprises a V-shaped groove etched in said frame; and wherein said integrated circuit is formed from <
100>
silicon. - View Dependent Claims (10)
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Specification