Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials

• US 6,150,703 A
• Filed: 06/29/1998
• Issued: 11/21/2000
• Est. Priority Date: 06/29/1998
• Status: Expired due to Term

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: TRW Limited (Zeppelin - Stiftung der Stadt Friedrichshafen)
• Inventors: Crawford, Jay D., Cushman, Drew
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US09/106,729
• Time in Patent Office: 876 Days
• Field of Search: 257/415, 257/416, 333/189, 333/190, 333/191, 333/192, 333/187, 333/188, 333/194, 310/321, 310/311, 438/50
• US Class Current: 257/415
• CPC Class Codes: H03H 9/02118 of lateral leakage between adjacent resonators
• CPC Class Codes: H03H 9/132 characterized by a particular shape
• CPC Class Codes: Y10T 29/42 Piezoelectric device making

Abstract

A semiconductor bulk acoustic resonator (SBAR) with improved passband insertion loss and phase performance characteristics is suitable for use in a wide variety of narrowband filtering applications. The SBAR is configured to suppress lateral propagating acoustical wave modes. The lateral acoustical wave modes are controlled by varying the lateral dimension of the resonator electrodes and or utilizing a viscous acoustic damping material, such as a viscoelastic material, such as polyimide, applied along at least a portion of the perimeter of the electrodes to attenuate reflections of the lateral acoustic modes at the electrode edges back into the electrode region.

Claims

1. A semi-conductor bulk acoustic resonator (SBAR) comprising:

a substrate;

a layer of piezo-electric material formed on said substrate; and

a pair of electrodes, configured such that said piezo-electric layer sandwiched between said electrodes, said pair of electrodes forming an input electrode and an output electrode; and

an acoustic damping material disposed around at least a portion of the perimeter of one of said input or output electodes for suppressing lateral mode resonances of said SBAR.

2. The SBAR as recited in claim 1, wherein said acoustic damping material is disposed around a portion of the perimeter of said electrodes.

3. The SBAR as recited in claim 1, wherein said acoustic damping material is a viscoelastic material.

4. The SBAR as recited in claim 3, wherein said viscoelastic material is a polyimide.

5. A semi-conductor bulk acoustic resonator (SBAR) comprising:

a layer of piezoelectric material;

a pair of electrodes configured such that said piezo-electric material is sandwiched between said electrodes, said electrodes defining input and output electrodes, at least one of said input or output electrodes configured with two pairs of opposing sides, at least one pair of opposing sides formed to be linear and non-parallel to suppress lateral acoustic wave modes.

6. The SBAR as recited in claim 5, wherein said substrate is GaAs.

7. The SBAR as recited in claim 5, wherein said piezo-electric material is selected from the group of aluminum nitride, zinc oxide, or any other piezoelectric material.