Advanced CMOS circuitry that utilizes both sides of a wafer surface for increased circuit density
First Claim
1. A semiconductor wafer, comprising:
- a base substrate having a first side and a second side;
a first semiconductor layer positioned on the first side;
a first isolation structure positioned on the first side and around the first semiconductor layer;
a second semiconductor layer positioned on the second side; and
a second isolation structure positioned on the second side and around the second semiconductor layer.
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Accused Products
Abstract
An integrated circuit employing both sides of a base substrate or wafer and a method of making the same are provided. In one aspect, the integrated circuit includes a base substrate that has a first side and a second side opposite the first side. The first side has a first semiconductor layer and a first isolation structure positioned thereon wherein the first side surrounds the first semiconductor layer. The second side has a second semiconductor layer and a second isolation structure positioned thereon wherein the second isolation structure surrounds the second semiconductor layer. A first circuit device is positioned on the first semiconductor layer. A second circuit device is positioned on the second semiconductor layer. The method enables simultaneous processing of both sides of a given wafer. Fabrication efficiency is increased through higher throughput and much higher yields per wafer.
47 Citations
26 Claims
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1. A semiconductor wafer, comprising:
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a base substrate having a first side and a second side; a first semiconductor layer positioned on the first side; a first isolation structure positioned on the first side and around the first semiconductor layer; a second semiconductor layer positioned on the second side; and a second isolation structure positioned on the second side and around the second semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor wafer, comprising:
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a semiconductor substrate having a first side with a first plurality of active areas and a second side with a second plurality of active areas; a firs isolation structure positioned on the first side and laterally isolating the first plurality of active areas; and a second isolation structure positioned on the second side and laterally isolating the second plurality of active areas. - View Dependent Claims (9, 10, 11, 12)
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13. An integrated circuit, comprising:
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a base substrate having a first side and a second side opposite the first side; a first semiconductor layer and a first isolation structure positioned on the first side, the first isolation structure surrounding the first semiconductor layer; a first circuit device positioned on the first semiconductor layer; a second semiconductor layer and a second isolation structure positioned on the second side, the second isolation structure surrounding the second semiconductor layer; and a second circuit device positioned on the second semiconductor layer. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. An integrated circuit, comprising:
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a base substrate having a first side and a second side opposite the first side, the first side having a first semiconductor layer and a first isolation structure positioned thereon wherein the first isolation structure surrounds the first semiconductor layer, the second side having a second semiconductor layer and a second isolation structure positioned thereon wherein the second isolation structure surrounds the second semiconductor layer; a first circuit device positioned on the first semiconductor layer; and a second circuit device positioned on the second semiconductor layer. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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Specification