Magnetoresistive sensor and head

• US 6,153,062 A
• Filed: 12/10/1998
• Issued: 11/28/2000
• Est. Priority Date: 09/12/1996
• Status: Expired due to Term

• Current Assignee: ALPS Electric Company Limited (Alps Alpine Co., Ltd.)
• Original Assignee: ALPS Electric Company Limited (Alps Alpine Co., Ltd.)
• Inventors: Saito, Masamichi, Watanabe, Toshinori
• Primary Examiner(s): Nguyen, Nam
• Assistant Examiner(s): VERSTEEG, STEVEN H
• Application Number:
  US09/208,354
• Time in Patent Office: 719 Days
• Field of Search: 204/192.15, 204/192.2, 204/192.21
• US Class Current: 204/192.2
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3163 Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3948 the sensitive elements being active read-out elements
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01F 10/3263 the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

PtMn films are used as antiferromagnetic layers of a dual spin-valve type magnetoresistive sensor. An exchange anisotropic magnetic field is achieved regardless of whether the PtMn film is formed over or under the pinned magnetic layer. Also, an effective exchange anisotropic magnetic field is produced even with heat treatment at a relatively low temperature. Alternatively, a PtMn film is used as an antiferromagnetic layer of a spin-valve film laminate. The use of a PtMn film enables a sufficient exchange anisotropic magnetic field to be produced even with a relatively low heat treatment temperature and a relatively small film thickness. Therefore, the number of total layers of the spin-valve film laminate can be increased to increase a magnetoresistance ratio, and a total thickness of the spin-valve film laminate can be made relatively small.

Claims

1. A method of manufacturing a magnetoresistive effect device, said method comprising:

forming a first antiferromagnetic layer made of a PtMn alloy on a substrate by a DC magnetron sputtering process,

forming a first pinned magnetic layer on said first antiferromagnetic layer in direct contact by a DC magnetron sputtering process,

forming a first non-magnetic electrically conductive layer on said first pinned magnetic layer,

forming a free magnetic layer on said first non-magnetic electrically conductive layer,

forming a second non-magnetic electrically conductive layer on said free magnetic layer,

forming a second pinned magnetic layer on said second non-magnetic electrically conductive layer by a DC magnetron sputtering process,

forming a second antiferromagnetic layer made of a PtMn alloy on said second pinned magnetic layer in direct contact by a DC magnetron sputtering process, and

heat-treating said first antiferromagnetic layer, said first pinned magnetic layer, said second pinned magnetic layer, and said second antiferromagnetic layer in a magnetic field at a temperature of between 210°

C. and 250°

C.

2. The method of manufacturing a magnetoresistive effect device according to claim 1, wherein said PtMn alloy has a composition of Pt--Mn--X, and X represents at least one element selected from Ni, Pd, Rh, Ru, Ir, Cr, Fe and Co.

3. The method of manufacturing a magnetoresistive effect device according to claim 1, wherein said heat treatment is performed in a vacuum of not greater than 5×

10^-6 Torr.

4. A method of manufacturing a magnetoresistive effect device according to claim 1, wherein said heat-treating is performed at a temperature of 210°

C. to 230°

C.

5. A method of manufacturing a magnetoresistive effect device according to claim 1, wherein said first non-magnetic electrically conductive layer, said free magnetic layer, and said second non-magnetic electrically conductive layer are formed by a DC magnetron sputtering-process.

6. A method of manufacturing a magnetoresistive effect device according to claim 1, wherein said first antiferromagnetic layer and said second antiferromagnetic layer comprise a PtMn alloy comprising 44 to 51 atomic percent of Pt and 49 to 56 atomic percent of Mn.

7. A method of manufacturing a magnetoresistive effect device according to claim 1, wherein said first pinned magnetic layer and said second pinned magnetic layer comprise one of an FeNi alloy, Co, a FeCo alloy, and a Fe--Co--Ni alloy.

8. A method of manufacturing a magnetoresistive effect device according to claim 1, wherein said heat-treating is performed in a magnetic field of 2000 Oe.

9. A method of manufacturing a magnetoresistive effect device, said method comprising:

forming a first free magnetic layer on a substrate,

forming a first non-magnetic electrically conductive layer on said first free magnetic layer,

forming a first pinned magnetic layer on said first non-magnetic electrically conductive layer by a DC magnetron sputtering process,

forming an antiferromagnetic layer made of a PtMn alloy on said first pinned magnetic layer in direct contact by a DC magnetron sputtering process,

forming a second pinned magnetic layer on said antiferromagnetic layer in direct contact relation by a DC magnetron sputtering process,

forming a second non-magnetic electrically conductive layer on said second pinned magnetic layer,

forming a second free magnetic layer on said second non-magnetic electrically conductive layer, and

heat-treating said first pinned magnetic layer, said antiferromagnetic layer, and said second pinned magnetic layer in a magnetic field at a temperature of between 210°

C. and 250°

C.

10. The method of manufacturing a magnetoresistive effect device according to claim 9, wherein said PtMn alloy has a composition of Pt--Mn--X, and X represents at least one element selected from Ni, Pd, Rh, Ru, Ir, Cr, Fe and Co.

11. The method of manufacturing a magnetoresistive effect device according to claim 9, wherein said heat treatment is performed in a vacuum of not greater than 5×

10^-6 Torr.

12. A method of manufacturing a magnetoresistive effect device according to claim 9, wherein said heat-treating is performed at a temperature of 210°

C. to 230°

C.

13. A method of manufacturing a magnetoresistive effect device according to claim 9, wherein said antiferromagnetic layer comprises a PtMn alloy comprising 44 to 51 atomic percent of Pt and 49 to 56 atomic percent of Mn.

14. A method of manufacturing a magnetoresistive effect device according to claim 9, wherein said first pinned magnetic layer and said second pinned magnetic layer comprise one of an FeNi alloy, Co, a FeCo alloy, and a Fe--Co--Ni alloy.

15. A method of manufacturing a magnetoresistive effect device according to claim 9, wherein said heat-treating is performed in a magnetic field of 2000 Oe.