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Advanced methods for making semiconductor devices by low temperature direct bonding

  • US 6,153,495 A
  • Filed: 03/09/1998
  • Issued: 11/28/2000
  • Est. Priority Date: 03/09/1998
  • Status: Expired due to Term
First Claim
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1. A method for making a semiconductor circuit from a plurality of semiconductor substrates, the method comprising the steps of:

  • processing at least one surface of at least one of the substrates to form at least one active device of the semiconductor circuit;

    thinning at least one of the substrates;

    bonding the plurality of substrates together after the processing and thinning steps so that the at least one processed surface including the at least one active device defines an outer surface of the semiconductor circuit; and

    annealing the bonded together substrates at an anneal temperature so as to not adversely effect the at least one active device.

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