Photoelectric conversion element having a surface member or a protection member and building material using the same

• US 6,153,823 A
• Filed: 03/11/1998
• Issued: 11/28/2000
• Est. Priority Date: 03/11/1997
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Shiozaki, Atsushi, Kanai, Masahiro, Saito, Keishi, Okada, Naoto, Ohtoshi, Hirokazu
• Primary Examiner(s): Chapman, Mark
• Application Number:
  US09/037,825
• Time in Patent Office: 993 Days
• Field of Search: 136/249, 136/251, 136/293, 136/249 TJ, 257/433, 257/436, 257/458
• US Class Current: 136/249
• CPC Class Codes: B32B 17/04 bonded with or embedded in a plastic substance
• CPC Class Codes: B32B 17/10788 containing ethylene vinylacetate
• CPC Class Codes: H01L 31/048 Encapsulation of modules
• CPC Class Codes: H01L 31/076 Multiple junction or tandem solar cells
• CPC Class Codes: H02J 7/35 with light sensitive cells
• CPC Class Codes: Y02B 10/10 Photovoltaic [PV]
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 90/50 Energy storage in industry with an added climate change mitigation effect
• CPC Class Codes: Y10S 136/293 Circuits

Abstract

A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions is provided. The semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other. A photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate when no surface material is present, and when present, the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.

Claims

1. A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on said substrate, and a surface material covering said semiconductor junctions;

wherein said semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other, and a photo-current generated by the semiconductor junction of the least deterioration rate is larger than that generated by the semiconductor junction of the greatest deterioration rate in a state of absence of said surface material, and

wherein said surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by said semiconductor junction of the least deterioration rate becomes smaller than that generated by the semiconductor junction of the greatest deterioration rate.

2. A photoelectric conversion element according to claim 1, wherein the absorption spectrum of the semiconductor junction of the least deterioration rate is set to be not more than 500 nm and the absorption spectrum of the semiconductor junction of the greatest deterioration rate is set to be not less than 200 nm.

3. A photoelectric conversion element according to claim 1, wherein a peak of the absorption spectrum of the semiconductor junction of the least deterioration rate is set at a wavelength not more than 500 nm and a peak of the absorption spectrum of the semiconductor junction of the greatest deterioration rate at a wavelength not less than 700 nm.

4. A photoelectric conversion element according to claim 1, wherein said semiconductor junction of the least deterioration rate is placed above said semiconductor junction of the greatest deterioration rate.

5. A photoelectric conversion element according to claim 1, wherein said semiconductor junction of the least deterioration rate is placed above said semiconductor junction of the greatest deterioration rate and the semiconductor junction of a middle deterioration rate is provided between the semiconductor junction of the least deterioration rate and the semiconductor junction of the greatest deterioration rate.

6. A photoelectric conversion element according to claim 5, wherein a peak of the absorption spectrum of said semiconductor junction of the least deterioration rate is set at a wavelength not more than 500 nm, a peak of the absorption spectrum of said semiconductor junction of the middle deterioration rate is set in a wavelength range of 500 nm to 700 nm, and a peak of the absorption spectrum of said semiconductor junction of the greatest deterioration rate is set at a wavelength not less than 700 nm.

7. A photoelectric conversion element according to either one of claims 1 to 6, wherein said semiconductor junctions are junctions having a pin junction.

8. A photoelectric conversion element according to claim 1, wherein said semiconductor junction of the greatest deterioration rate has an i-type semiconductor deposited by plasma CVD using microwave power and said semiconductor junction of the least deterioration rate has an i-type layer deposited by plasma CVD using radio frequency power.

9. A photoelectric conversion element according to claim 1, wherein said surface material is a material containing an ultraviolet absorbing material.

10. A photoelectric conversion element according to claim 1, wherein said surface material is a material having a characteristic of absorbing light of wavelengths not more than 350 nm.

11. A photoelectric conversion element according to claim 10, wherein said surface material is a material comprised of a surface encapsulating material and a surface film.

12. A photoelectric conversion element according to claim 11, wherein said encapsulating material contains an ultraviolet absorbing material.

13. A photoelectric conversion element wherein when a light incident surface of a photoelectric conversion section comprising a plurality of non-single-crystalline semiconductor junctions and having a transparent, conductive layer thereon is exposed to light without a protection member, a photo-current generated by the semiconductor junction having best property is greater than that generated by at least one of the other semiconductor junctions and wherein when the light incident surface is exposed to light with a protection member having a transmittance of 0 to 90% for light in a specific wavelength range, a photo-current generated by the semiconductor junction having the best property is always smaller than those generated by the other semiconductor junctions upon subjection to a deterioration test.

14. A photoelectric conversion element wherein a photo-current generated by a semiconductor junction having best property is 0 to 6% larger than that generated by at least one of other semiconductor junctions and wherein under irradiation with light in a state of presence of a protection member having a transmittance of 0 to 90% for light in a specific wavelength range a photo-current generated by the semiconductor junction having the best property is always smaller than those generated by the other semiconductor junctions upon subjection to a deterioration test.

15. A building material comprising:

a) a photoelectric conversion element comprising a substrate, and a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on said substrate;

wherein said semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other, and a photo-current generated by the semiconductor junction of the least deterioration rate is larger than that generated by the semiconductor junction of the greatest deterioration rate in a state of absence of said surface material, and

wherein said surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by said semiconductor junction of the least deterioration rate becomes smaller than that generated by the semiconductor junction of the greatest deterioration rate; and

b) a back material provided on a back surface of said photoelectric conversion element.

16. A building material according to claim 15, wherein said back material is a steel sheet for roof.

17. A building material according to claim 16, wherein said surface material is a material containing an ultraviolet absorbing material.

18. A building material according to claim 16, wherein said surface material is a material having a characteristic of absorbing light of wavelengths not more than 350 nm.

19. A building material according to claim 18, wherein said surface material is a material comprised of a surface encapsulating material and a surface film.

20. A building material according to claim 19, wherein said encapsulating material contains an ultraviolet absorbing material.

21. A power generation apparatus comprising:

a) a photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on said substrate, and a surface material covering said semiconductor junctions;

wherein said semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other, and a photo-current generated by the semiconductor junction of the least deterioration rate is larger than that generated by the semiconductor junction of the greatest deterioration rate in a state of absence of said surface material, and

wherein said surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by said semiconductor junction of the least deterioration rate becomes smaller than that generated by the semiconductor junction of the greatest deterioration rate; and

b) power converting means for converting power generated by said photoelectric conversion element.

22. A power generation apparatus according to claim 21, wherein said power converting means is means for converting the power from said photoelectric conversion element to ac waveform voltage.

23. A power generation apparatus according to claim 21, wherein said power converting means is means for converting the power from said photoelectric conversion element to dc waveform voltage.