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Thin film semiconductor device for display

  • US 6,153,893 A
  • Filed: 12/12/1996
  • Issued: 11/28/2000
  • Est. Priority Date: 11/05/1993
  • Status: Expired due to Term
First Claim
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1. A thin film semiconductor device, comprising:

  • a glass substrate;

    a display part formed on the glass substrate, said display part comprised of a plurality of pixel electrodes and pixel transistors each of which is associated with respective ones of the pixel electrodes;

    a peripheral drive circuit part formed on the same glass substrate, said peripheral drive circuit part comprising CMOS transistors;

    each of the pixel transistors and CMOS transistors comprising a gate electrode formed directly on the glass substrate, a substantially pure polycrystalline semiconductor layer on the gate electrode over a gate insulating layer, and a high concentration impurity layer having a metal layer in the case of the CMOS transistors or a pixel electrode layer or a metal layer in the case of the pixel transistors thereon over the pure polycrystalline semiconductor layer forming source/drain regions, and wherein said gate insulating layer is formed of an anodic oxidation metal oxide; and

    the pixel transistors being of an LDD structure wherein a low concentration impurity layer is formed between the substantially pure polycrystalline semiconductor layer and the high concentration impurity layer.

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