Thin film semiconductor device for display
First Claim
1. A thin film semiconductor device, comprising:
- a glass substrate;
a display part formed on the glass substrate, said display part comprised of a plurality of pixel electrodes and pixel transistors each of which is associated with respective ones of the pixel electrodes;
a peripheral drive circuit part formed on the same glass substrate, said peripheral drive circuit part comprising CMOS transistors;
each of the pixel transistors and CMOS transistors comprising a gate electrode formed directly on the glass substrate, a substantially pure polycrystalline semiconductor layer on the gate electrode over a gate insulating layer, and a high concentration impurity layer having a metal layer in the case of the CMOS transistors or a pixel electrode layer or a metal layer in the case of the pixel transistors thereon over the pure polycrystalline semiconductor layer forming source/drain regions, and wherein said gate insulating layer is formed of an anodic oxidation metal oxide; and
the pixel transistors being of an LDD structure wherein a low concentration impurity layer is formed between the substantially pure polycrystalline semiconductor layer and the high concentration impurity layer.
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Abstract
An LDD structure of a thin film transistor for pixel switching is realized on a large glass substrate by low-temperature processes. A thin film semiconductor device for display comprises a display part and a peripheral driving part formed on a glass substrate (0). Pixel electrodes (9) and NchLDD-TFTs are arranged in a matrix in the display part. Thin film transistor PchTFTs and NchTFTs which constitute circuit elements are formed in the peripheral driving part. Each thin film transistor consists of a gate electrode (1), an insulating film (2) formed on the gate electrode (1), a polycrystalline semiconductor layer (3) formed on the insulating layer (2), and a high concentration impurity layer constituting a source (4) and a drain (7) formed on the polycrystalline semiconductor layer (3). Further, an NchLDD-TFT thin film transistor for switching has an LDD structure in which a low concentration impurity layer (8) is interposed between the polycrystalline semiconductor layer (3) and the high concentration impurity layer (7).
248 Citations
19 Claims
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1. A thin film semiconductor device, comprising:
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a glass substrate; a display part formed on the glass substrate, said display part comprised of a plurality of pixel electrodes and pixel transistors each of which is associated with respective ones of the pixel electrodes; a peripheral drive circuit part formed on the same glass substrate, said peripheral drive circuit part comprising CMOS transistors; each of the pixel transistors and CMOS transistors comprising a gate electrode formed directly on the glass substrate, a substantially pure polycrystalline semiconductor layer on the gate electrode over a gate insulating layer, and a high concentration impurity layer having a metal layer in the case of the CMOS transistors or a pixel electrode layer or a metal layer in the case of the pixel transistors thereon over the pure polycrystalline semiconductor layer forming source/drain regions, and wherein said gate insulating layer is formed of an anodic oxidation metal oxide; and the pixel transistors being of an LDD structure wherein a low concentration impurity layer is formed between the substantially pure polycrystalline semiconductor layer and the high concentration impurity layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A liquid crystal display device, comprising:
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a glass substrate; a display part formed on the glass substrate, said display part comprised of a plurality of pixel electrodes and pixel transistors associated with the respective pixel electrodes; a peripheral drive circuit part formed on the same glass substrate, said peripheral drive circuit comprised of CMOS transistors; each of the pixel transistors and CMOS transistors comprising a gate electrode formed directly on the glass substrate, a substantially pure polycrystalline semiconductor layer formed on an insulating film on the gate electrode, and a high concentration impurity layer having a metal layer in the case of the CMOS transistors or a pixel electrode layer or a metal layer in the case of the pixel transistors thereon over the pure polycrystalline semiconductor layer forming source/drain regions, and wherein said gate insulating layer is formed of an anodic oxidation metal oxide; the pixel transistors being of an LDD structure wherein a low concentration impurity layer is interposed between the substantially pure polycrystalline semiconductor layer and the high concentration impurity layer; an opposed substrate disposed facing the glass substrate; and a liquid crystal layer held between the glass substrate and the opposed substrate. - View Dependent Claims (10, 11, 12)
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13. A thin film semiconductor device, comprising:
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a glass substrate; a display part formed on the glass substrate, said display part comprised of a plurality of pixel electrodes and pixel transistors each of which is associated with respective ones of the pixel electrodes; a peripheral drive circuit part formed on the glass substrate, said peripheral drive circuit part comprising CMOS transistors; each of the pixel transistors and CMOS transistors comprising a gate electrode formed on the glass substrate, and a substantially a pure polycrystalline semiconductor layer on the gate electrode over a gate insulating layer, and a high concentration impurity layer forming source/drain regions; the pixel transistors being of an LDD structure wherein a low concentration impurity layer is formed between the substantially pure polycrystalline semiconductor layer and the high concentration impurity layer; and said substantially pure polycrystalline semiconductor layer is formed only over the gate electrode of the CMOS transistors.
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14. A display device, comprising:
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a glass substrate; a display portion formed on the glass substrate, said display portion comprised of a plurality of pixel electrodes and pixel transistors associated with the respective pixel electrodes for switching and formed in a matrix; a peripheral drive circuit portion formed on the same glass substrate, said peripheral drive circuit comprising CMOS transistors; each of the pixel transistors and CMOS transistors comprising a gate electrode formed directly on the glass substrate, an insulating layer formed on the gate electrode, a substantially pure polycrystalline semiconductor layer on the insulating layer and a high concentration impurity layer having a metal layer in the case of the CMOS transistors or a pixel electrode layer or a metal layer in the case of the pixel transistors thereon over the pure polycrystalline semiconductor layer forming source/drain regions; and
wherein said gate insulating layer is formed of an anodic oxidation metal oxide; andthe pixel transistors are further comprised of an LDD structure wherein a low concentration impurity layer is formed between the substantially pure polycrystalline semiconductor layer and the high concentration impurity layer. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification