Semiconductor acceleration sensor and manufacturing method thereof

• US 6,153,917 A
• Filed: 03/16/1999
• Issued: 11/28/2000
• Est. Priority Date: 03/16/1998
• Status: Expired due to Term

• Current Assignee: Akebono Brake Industry Company Limited (Akebono Brake Corporation), Masayoshi Esashi
• Original Assignee: Akebono Brake Industry Company Limited (Akebono Brake Corporation), Masayoshi Esashi
• Inventors: Matsunaga, Tadao, Mori, Masatomo, Esashi, Masayoshi, Kunimi, Takashi, Nezu, Masahiro
• Primary Examiner(s): Monin, Jr., Donald L.
• Application Number:
  US09/270,659
• Time in Patent Office: 623 Days
• Field of Search: 216/2, 216/33, 73/514.32, 73/517, 257/419, 360/280, 360/283.1, 360/283.3
• US Class Current: 257/419
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends

Abstract

A semiconductor acceleration sensor including a central board having a movable electrode section, an outside board having a stationary electrode section, and a sealing insulating section for joining the central board and the outside board which are laminated on each other, wherein the sealing insulating section has a conductive layer, and the conductive layer is a sealing member or an anodic bonding electrode.

Claims

1. A semiconductor acceleration sensor comprising:

a central board having a movable electrode section;

an outside board having a stationary electrode section; and

a sealing insulating section for joining the central board and the outside board which are laminated on each other, wherein the sealing insulating section has an insulating layer, a conductive layer on the insulating layer, and a sealing layer on the conductive layer.

2. The semiconductor acceleration sensor according to claim 1, wherein the conductive layer is formed of Cr.

3. The semiconductor acceleration sensor according to claim 1, wherein the insulating layer is formed of SiO₂.

4. The semiconductor acceleration sensor according to one of claims 1 to 3, wherein the conductive layer is connected to ground so that an influence of electrostatic capacity generated between the central board and the outside board which are opposed to each other via the sealing insulating section is avoided.

5. A method of manufacturing a semiconductor acceleration sensor which comprises a central board having a movable electrode section, an outside board having a stationary electrode section and a sealing insulating section having a conductive layer, wherein the central board, the outside board, and the sealing insulating section are laminated and joined on each other, comprising the step of:

laminating the central board on the outside board and subjecting the central board and the outside board to an anodic-bonding, wherein the conductive layer is used as an anodic-bonding electrode.

6. The method of manufacturing a semiconductor acceleration sensor according to claim 5, wherein electric potential of the central board is the same as that of the outside board.

7. The method of manufacturing a semiconductor acceleration sensor according to claim 5, wherein the conductive layer is formed of Cr.