Method of forming a trench capacitor using a rutile dielectric material
First Claim
1. A method of forming semiconductor devices comprising the steps of:
- providing a deep trench in a substrate, the deep trench having a lower portion; and
forming a dielectric layer in the deep trench by lining the lower portion of the deep trench with the dielectric layer, the dielectric layer including a rutile titanuium dioxide layer.
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Accused Products
Abstract
A method of forming semiconductor devices in accordance with the present invention includes the steps of providing a deep trench in a substrate, the deep trench having a lower portion and forming a dielectric layer in the deep trench by lining the lower portion of the deep trench with a dielectric layer, the dielectric layer including titanium. A semiconductor device includes a substrate having a trench formed therein, a storage node formed in the trench and capacitively coupled to the substrate and a dielectric layer formed in the trench between the storage node and the substrate, the dielectric layer lining a lower portion of the trench wherein the dielectric layer includes titanium oxide.
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Citations
20 Claims
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1. A method of forming semiconductor devices comprising the steps of:
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providing a deep trench in a substrate, the deep trench having a lower portion; and forming a dielectric layer in the deep trench by lining the lower portion of the deep trench with the dielectric layer, the dielectric layer including a rutile titanuium dioxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming semiconductor memory devices comprising the steps of:
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providing a deep trench in a substrate, the deep trench having a lower portion; annealing the substrate in a hydrogen environment; exposing said deep trench to an NH3 environment to form a first nitride barrier layer; forming a titanium dioxide rutile dielectric layer in the deep trench; depositing a second nitride barrier layer over said titanium dioxide rutile dielectric layer; at least partially filing the deep trench with a conductive filler material thereby forming a storage node; and removing portions of the titanium dioxide rutile dielectric, first nitride barrier, and second nitride barrier layers such that the titanium dioxide rutile dielectric layer and the first and second nitride barrier layers line the lower portion of the deep trench. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification