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Isolation trench in semiconductor substrate with nitrogen-containing barrier region, and process for forming same

  • US 6,156,620 A
  • Filed: 07/22/1998
  • Issued: 12/05/2000
  • Est. Priority Date: 07/22/1998
  • Status: Expired due to Term
First Claim
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1. A process for forming an improved isolation trench in a silicon semiconductor substrate containing nitrogen atoms formed in said trench which comprises:

  • a) forming an isolation trench in a silicon semiconductor substrate;

    b) forming in said isolation trench a barrier region by treating said trench structure with nitrogen atoms from a nitrogen plasma, said barrier region formed contiguous with the silicon semiconductor substrate surfaces of said isolation trench; and

    c) forming a silicon oxide layer over said barrier region in said trench to confine said nitrogen atoms in said barrier region be the steps of;

    i) forming an amorphous silicon layer over said barrier region in said trench, andii) then oxidizing said layer of amorphous silicon to form said layer of silicon oxide over said barrier region in said trench.

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