Retardation layer for preventing diffusion of metal layer and fabrication method thereof
First Claim
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1. A fabrication method for a retardation layer which prevents copper diffusion, applicable to a semiconductor process, comprising steps of:
- providing a substrate with a first metal line formed thereon;
depositing a dielectric layer on the substrate to cover the first metal line;
forming an opening in the dielectric layer;
forming a first laminated layer to cover a profile of the opening and the dielectric layer, wherein the first laminated layer is conformal to the profile of the opening;
forming a copper layer on the laminated layer for filling the opening;
removing the copper layer and the laminated layer outside the opening so as to form a copper damascene;
forming a second laminated layer to completely cover the copper layer and the dielectric layer.
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Abstract
A retardation layer of a copper damascene process and the fabrication method thereof, to replace the conventional barrier layer with a laminated layer. The laminated layer combines the conventional barrier layer with a porous layer, wherein the porous layer can be formed either above or below the barrier layer to improve the retardation of the copper atom diffusion. Preferably, the porous layer is formed above the barrier layer.
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Citations
8 Claims
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1. A fabrication method for a retardation layer which prevents copper diffusion, applicable to a semiconductor process, comprising steps of:
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providing a substrate with a first metal line formed thereon; depositing a dielectric layer on the substrate to cover the first metal line; forming an opening in the dielectric layer; forming a first laminated layer to cover a profile of the opening and the dielectric layer, wherein the first laminated layer is conformal to the profile of the opening; forming a copper layer on the laminated layer for filling the opening; removing the copper layer and the laminated layer outside the opening so as to form a copper damascene; forming a second laminated layer to completely cover the copper layer and the dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification