Process for manufacturing a semiconductor device
First Claim
1. A process for manufacturing a semiconductor device having a buried electrically conductive film comprising:
- a first step of, with heating at a first temperature a substrate on which an insulating film having a depression has been formed, depositing a first copper film having a sufficient thickness for moderating a step defined by the depression on a surface of the insulating film by a metal organic chemical vapor deposition method; and
a second step of, with heating the substrate at a second temperature higher than the first temperature, depositing on the first copper film a second copper film having a sufficient thickness for filling the depression by a metal organic chemical vapor deposition method,wherein a buried electrically conductive layer composed of the first and second copper films is formed in the depression by the first and second steps.
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Accused Products
Abstract
A process for manufacturing a semiconductor device having a buried electrically conductive film includes: a first step of, with heating at a first temperature a substrate on which an insulating film having a depression is formed, depositing a first copper film having a sufficient thickness for moderating a step defined by the depression, on a surface of the insulating film by a metal organic chemical vapor deposition method; and a second step of, with heating the substrate at a second temperature higher than the first temperature, depositing a second copper film having a sufficient thickness for filling the depression by a metal organic chemical vapor deposition method, wherein a buried electrically conductive layer composed of the first and second copper films is formed in the depression by the first and second steps.
4 Citations
24 Claims
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1. A process for manufacturing a semiconductor device having a buried electrically conductive film comprising:
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a first step of, with heating at a first temperature a substrate on which an insulating film having a depression has been formed, depositing a first copper film having a sufficient thickness for moderating a step defined by the depression on a surface of the insulating film by a metal organic chemical vapor deposition method; and a second step of, with heating the substrate at a second temperature higher than the first temperature, depositing on the first copper film a second copper film having a sufficient thickness for filling the depression by a metal organic chemical vapor deposition method, wherein a buried electrically conductive layer composed of the first and second copper films is formed in the depression by the first and second steps. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 14, 16, 17, 21, 22, 23)
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- 2. A process according to claim 2, wherein the first and second temperatures are controlled by irradiation with infrared rays from a side of the substrate on which the insulating film has not been formed.
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13. A process for manufacturing a semiconductor device having a buried electrically conductive film comprising the steps of:
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forming on a substrate an insulating film; forming a depression in the insulating film; forming a barrier film on a surface of the insulating film; heating at a first temperature the substrate and depositing on a surface of the barrier film, by a metal organic chemical vapor deposition method, a first copper film having a sufficient thickness for moderating a step defined by the depression; and heating the substrate at a second temperature higher than the first temperature and depositing on the first copper film, by a metal organic chemical vapor deposition method, a second copper film having a sufficient thickness for filling the depression, wherein a buried electrically conductive layer composed of the first and second copper films is formed in the depression. - View Dependent Claims (15, 18, 19, 20, 24)
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Specification