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Process for manufacturing a semiconductor device

  • US 6,156,656 A
  • Filed: 11/18/1999
  • Issued: 12/05/2000
  • Est. Priority Date: 11/27/1998
  • Status: Expired due to Fees
First Claim
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1. A process for manufacturing a semiconductor device having a buried electrically conductive film comprising:

  • a first step of, with heating at a first temperature a substrate on which an insulating film having a depression has been formed, depositing a first copper film having a sufficient thickness for moderating a step defined by the depression on a surface of the insulating film by a metal organic chemical vapor deposition method; and

    a second step of, with heating the substrate at a second temperature higher than the first temperature, depositing on the first copper film a second copper film having a sufficient thickness for filling the depression by a metal organic chemical vapor deposition method,wherein a buried electrically conductive layer composed of the first and second copper films is formed in the depression by the first and second steps.

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