Image sensor

• US 6,157,072 A
• Filed: 04/08/1997
• Issued: 12/05/2000
• Est. Priority Date: 04/27/1991
• Status: Expired due to Fees

• Current Assignee: Kanegafuchi Chemical Industry Co. Ltd. (Kaneka Corporation)
• Original Assignee: Kanegafuchi Chemical Industry Co. Ltd. (Kaneka Corporation)
• Inventors: Hosokawa, Yoichi, Murakami, Satoru, Zenki, Tomoyoshi, Kobayashi, Kenji, Nakayama, Takehisa, Obayashi, Tadashi
• Primary Examiner(s): Ngo , Ngan V.
• Application Number:
  US08/835,925
• Time in Patent Office: 1,337 Days
• Field of Search: 257/53, 257/54, 257/55, 257/433, 257/443, 257/448, 257/458, 257/457, 257/459, 250/208.1, 358/213.16, 358/213.15
• US Class Current: 257/443
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 31/022408 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells

Abstract

The invention relates to an image sensor for use in the facsimile device, image reader, digital scanner and the like. In this image sensor, the photodiodes and blocking diodes formed on an insulating board are insulated by a transparent interlayer insulating film and are connected in series and opposite polarity by coupling electrodes through contact holes in the transparent interlayer insulating film. This image sensor features a high reading speed and a low dark output noise.

Claims

1. An image sensor comprising:

an insulating substrate board;

an array of a plurality of blocks on said substrate board, said blocks of said array each including a plurality of photodiodes, a corresponding number of blocking diodes connected respectively in series and opposite polarity to said photodiodes;

a common electrode for said number of said blocking diodes for each of said blocks;

a matrix wiring interconnecting ones of the photodiodes in the same relative positions within respective ones of said blocks;

a transparent interlayer insulating film covering said photodiodes and said blocking diodes formed on said insulating substrate board;

said transparent interlayer insulating film having a contact hole and a coupling electrode passing through said contact hole connecting each of said photodiodes to the corresponding one of said blocking diodes in series and opposite polarity; and

said insulating substrate board being a glass substrate having a thickness of 0.3 to 0.7 mm and a width in the subordinate scanning direction of 1.0 to 2.0 mm, and a ratio of a length in the main scanning direction to the width in the subordinate scanning direction of said glass substrate being not less than about 50 and a ratio of the thickness of said glass substrate to the width in the subordinate scanning direction being not more than 0.7.

2. An image sensor according to claim 1 further comprising a read-out signal correcting block disposed at an initial end of a time series of the array blocks, said read-out signal correcting block being structurally identical to said blocks and connected in light-receiving condition to said matrix wiring to provide a read-out signal.

3. An image sensor according to claim 1 wherein said plurality of blocks is arranged in a time series having an initial and terminal end and includes at lest one of said blocks being a dark output correcting block disposed at one of the initial end and the terminal end of said time series, said dark output correcting block being structurally identical to said blocks forming said array and connected to said matrix wiring in a condition with corresponding ones of said photodiodes of said dark output correcting block shielded from light to provide a dark output readout signal.

4. An image sensor according to claim 1 wherein the photodiodes and the blocking diodes each respectively have a photodiode semiconductor area and a blocking diode semiconductor area, and the ratio of the photodiode semiconductor area to the corresponding blocking diode semiconductor area is 1:

0.03 through 0.3

5. An image sensor according to claim 1 wherein the photodiodes have semiconductor parts, said semiconductor parts being of a PIN amorphous silicon semiconductor which contains carbon C in a P-type semiconductor layer.

6. An image sensor according to claim 1 wherein each of said photodiodes and the corresponding blocking diode have an N-type semiconductor layer side and are connected to each other in series and opposite polarity on the N-type semiconductor layer sides thereof.

7. An image sensor according to claim 1 wherein the blocking diodes and photodiodes each have a transparent electrode, said coupling electrode connects the transparent electrodes of corresponding ones of said photodiodes and said blocking diodes, and said coupling electrode covers the transparent electrode of the corresponding blocking diode.

8. An image sensor according to claim 1 wherein said photodiodes each have an electrode conductor leading out to said matrix wiring and connected to said matrix wiring via a contact hole formed in the respective transparent interlayer insulating film to form matrix connections with the matrix wiring, the line-width of the matrix wiring being broader at said connection than the line-width of the remainder of the matrix wiring.

9. An image sensor according to claim 1 wherein electrode conductors are provided leading out from the electrodes of said blocking diodes, the region of the image sensor other than said electrode conductors leading out from electrodes of said blocking diodes and at least output electrodes of said matrix wiring, which form external connections, being covered with a protective film of at least one inorganic insulating material.

10. An image sensor according to claim 1 where electrodes of said photodiodes and blocking diodes on said insulating board are made of a non-diffusing metal and each of the coupling electrodes connecting said photodiodes to said corresponding blocking diodes in series and opposite polarity is a multilayer structure consisting of at least 2 layers formed from a non-diffusing metal material and a good electrode conductor.

11. An image sensor according to claim 1 wherein the number of blocks constituting said image sensor is either 54 or 108 and the number of photodiodes and corresponding clocking diodes constituting each block is either 32 or 16 each.

12. An image sensor according to claim 1 wherein said thickness of said glass substrate is in the range of 0.4 to 0.7 mm.

13. An image sensor according to claim 12 wherein the length in the main scanning direction is in the range of 200 to 340 mm, and the thickness is in the range of 0.5 to 0.7 mm.

14. An image sensor according to claim 12 wherein the ratio of the width in the subordinate scanning direction to the thickness of said glass substrate board is not less than about 1.8.

15. An image sensor according to claim 1 wherein said insulating board is an alkali-free glass substrate board having a surface roughness of not more than 500 Angstrom units on the side where said photodiodes are formed and a curl in the main scanning direction of not more than 0.4 mm per 100 mm length.

16. An image sensor according to claim 15 wherein the surface roughness of said glass substrate board is not more than 200 Angstrom units and the curl in the main scanning direction is not more than 0.2 mm per 100 mm length.

18. An image sensor according to claim 15 wherein a dummy wiring is disposed near at least either one of said drive wirings and said read-out wirings.

17. A contact type image sensor for direct wire bonded connections to driving ICs, each having a predetermined number of drive outputs, and a reading IC having a predetermined number of read inputs, comprising:

a substrate having an array of blocks and a first side edge;

said blocks each containing a plurality of pairs of photodiodes and blocking diodes;

drive wirings, each connecting in common, in each of said blocks, said blocking diodes of said blocks;

read-out wires, each connecting in common photodiodes of said plurality of photodiodes that occupy the same relative positions in said blocks;

said drive wirings having terminating drive terminals arranged in groups wherein each group has a number of drive terminals equal to the predetermined number of drive outputs;

said groups each having said drive terminals positioned along said first sides edge substantially in correspondence with a positioning of said drive outputs permitting a direct wire bond connection between said drive terminals and said outputs; and

said read-out wires terminating in read-out terminals arranged consecutively positioned in a group along said first side edge permitting direct wire bond connections to said read inputs.

19. An image sensor according to claim 17 wherein said read-out wires form a matrix wiring including:

an electrode conductor extending from each of said photodiodes;

matrix interconnecting wiring connecting said electrode conductors to connect in common said photodiodes occupying said same relative positions in said blocks; and

a line-width of the matrix interconnecting wiring being broader at connections with electrode conductors than a line-width of remainders of the matrix interconnecting wiring.