Method and system for on-line monitoring plasma chamber condition by comparing intensity of certain wavelength

• US 6,157,867 A
• Filed: 02/27/1998
• Issued: 12/05/2000
• Est. Priority Date: 02/27/1998
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Cho, Ching-Wen, Hwang, Yuan-Ko
• Primary Examiner(s): Grant, William
• Assistant Examiner(s): Garland, Steven R.
• Application Number:
  US09/031,654
• Time in Patent Office: 1,012 Days
• Field of Search: 156/345, 204/298.03, 204/298.32, 216/59, 216/60, 216/67, 356/316, 438/9, 700/121, 700/266, 700/117, 702/31
• US Class Current: 700/121
• CPC Class Codes: C23C 14/544 using measurement in the gas phase
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: G05B 2219/24042 Signature analysis, compare recorded with current data, if error then alarm
• CPC Class Codes: G05B 23/0235 based on a comparison with predetermined threshold or range, e.g. "classical methods", carried out during normal operation; threshold adaptation or choice; when or how to compare with the threshold
• CPC Class Codes: G05B 23/0286 Modifications to the monitored process, e.g. stopping operation or adapting control
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A method for operating a plasma processing system comprises the following steps. Produce a plasma in a plasma processing chamber operating upon a selected workpiece. Perform in situ detection of electromagnetic radiation of a certain wavelength generated in the plasma in the plasma processing chamber. Calculate a first intensity difference of the certain wavelength from a set point of intensity. Halt production of the plasma in the plasma processing chamber if the first intensity difference is outside of specifications.

Claims

1. A method for operating a plasma processing system comprising:

production of a plasma in a plasma processing chamber operating upon a selected workpiece,

in situ detecting electromagnetic radiation of a certain wavelength generated in said plasma in said plasma processing chamber,

calculating a first intensity difference of said certain wavelength from a set point of intensity,

halting production of said plasma in said plasma processing chamber if said first intensity difference is outside of specifications,

calculating a relative intensity difference of said certain wavelength with respect to intensities at said certain wavelength of other workpieces, and

halting production of said plasma in said plasma processing chamber if an additional intensity difference is outside of specifications.

2. A method for operating a plasma processing system in accordance with claim 1 comprising:

Wafer to workpiece comparison (within lot);

space="preserve" listing-type="equation">E.sub.k (t)=I.sub.n (t)-I.sub.k (t), n=1, 2, 3, . . . , k=1, 2, . . . , n

where

E_k (t) are the 1, 2, . . . , nth, relative intensity differences

I_n (t) is the monitored intensity of the nth (current) processing workpiece

I_k (t) are the intensities of the 1, 2, . . . , nth processing workpieces.

3. A method for operating a plasma processing system in accordance with claim 2 comprising:

performing said determination of relative intensity difference for each of a set of previous workpieces until said set of previous workpieces is exhausted.

4. A method for operating a plasma processing system in accordance with claim 1 comprising the steps as follows:

retrieving previous workpiece intensity data,

retrieving current workpiece intensity data,

determining the relative intensity difference by comparing the current workpiece with previous workpiece intensity data,

testing whether said relative intensity difference is outside of specifications for relative intensity difference, and

if YES, halting production of said plasma in said plasma processing chamber.

5. A method for operating a plasma processing system in accordance with claim 4 comprising:

performing said determination of relative intensity difference for each of a set of previous workpieces until said set of previous workpieces is exhausted.

6. A method for operating a plasma processing system in accordance with claim 1 comprising:

performing said determination of relative intensity difference for each of a set of previous workpieces until said set of previous workpieces is exhausted.

7. A method for operating a plasma processing system comprising the steps as follows:

production of a plasma in a plasma processing chamber operating upon a selected workpiece,

in situ detecting electromagnetic radiation of a certain wavelength generated in said plasma in said plasma processing chamber,

calculating a first intensity difference of said certain wavelength from a set point of intensity,

halting production of said plasma in said plasma processing chamber if said first intensity difference is outside of specifications,

retrieving intensity set point data,

collecting current workpiece intensity data,

determining the current workpiece vs set point intensity difference by comparing said current workpiece intensity data to said intensity set point data,

testing whether said intensity difference is outside of specifications for intensity;

if YES, halting production of said plasma in said plasma processing chamber; and

if NO, storing said current workpiece intensity data and then retrieving previous workpiece intensity data,

retrieving current workpiece intensity data,

determining the relative intensity difference by comparing the current workpiece with previous workpiece intensity data,

testing whether said relative intensity difference is outside of specifications for relative intensity difference, and

if YES, halting production of said plasma in said plasma processing chamber.

8. Apparatus comprising a manufacturing and control system for operating a plasma processing system comprising:

a plasma processing chamber for production of a plasma in a plasma processing chamber operating upon a selected workpiece,

a spectrum detector for in situ detecting electromagnetic radiation of a certain wavelength generated in said plasma in said plasma processing chamber,

means for calculating a first intensity difference of said certain wavelength from a set point of intensity,

means for halting production of said plasma in said plasma processing chamber if said first intensity difference is outside of specifications,

calculating a relative intensity difference of said certain wavelength with respect to intensities at said certain wavelength of other workpieces, and

means for halting production of said plasma in said plasma processing chamber if an additional intensity difference is outside of specifications.

9. The apparatus of claim 8 comprising:

means for providing wafer to workpiece comparison (within lot);

space="preserve" listing-type="equation">E.sub.k (t)=I.sub.n (t)-I.sub.k (t), n=1, 2, 3, . . . , k=1, 2, . . . , n

where

E_k (t) are the 1, 2, . . . , nth, relative intensity differences

I_n (t) is the monitored intensity of the nth (current) processing workpiece

I_k (t)are the intensities of the 1, 2, . . . , nth processing workpieces.

10. A system for operating a plasma processing system in accordance with claim 9 comprising:

performing said determination of relative intensity difference for each of a set of previous workpieces until said set of previous workpieces is exhausted.

11. A system for operating a plasma processing system in accordance with claim 8 comprising the steps as follows:

retrieving previous workpiece intensity data,

retrieving current workpiece intensity data,

determining the relative intensity difference by comparing the current workpiece with previous workpiece intensity data,

testing whether said relative intensity difference is outside of specifications for relative intensity difference, and

if YES, halting production of said plasma in said plasma processing chamber.

12. A system for operating a plasma processing system in accordance with claim 11 comprising:

performing said determination of relative intensity difference for each of a set of previous workpieces until said set of previous workpieces is exhausted.

13. A system for operating a plasma processing system in accordance with claim 8 comprising:

performing said determination of relative intensity difference for each of a set of previous workpieces until said set of previous workpieces is exhausted.

14. Apparatus comprising a manufacturing and control system for operating a plasma processing system comprising:

a plasma processing chamber for production of a plasma in a plasma processing chamber operating upon a selected workpiece,

a spectrum detector for in situ detecting electromagnetic radiation of a certain wavelength generated in said plasma in said plasma processing chamber,

means for calculating a first intensity difference of said certain wavelength from a set point of intensity,

means for halting production of said plasma in said plasma processing chamber if said first intensity difference is outside of specifications,

means for retrieving intensity set point data,

means for collecting current workpiece intensity data,

means for determining the current workpiece vs set point intensity difference by comparing said current workpiece intensity data to said intensity set point data,

means for testing whether said intensity difference is outside of specifications for intensity;

if YES, halting production of said plasma in said plasma processing chamber; and

if NO, storing said current workpiece intensity data and then retrieving previous workpiece intensity data,

means for retrieving current workpiece intensity data,

means for determining the relative intensity difference by comparing the current workpiece with previous workpiece intensity data,

means for testing whether said relative intensity difference is outside of specifications for relative intensity difference, and

if YES, means for halting production of said plasma in said plasma processing chamber.