Process for selective transfer of a microstructure formed on an initial substrate to a final substrate

• US 6,159,323 A
• Filed: 11/24/1998
• Issued: 12/12/2000
• Est. Priority Date: 12/02/1997
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Original Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Inventors: Joly, Jean-Pierre, Nicolas, Gerard, Bruel, Michel
• Primary Examiner(s): Ball, Michael W.
• Assistant Examiner(s): Haran, John T.
• Application Number:
  US09/200,388
• Time in Patent Office: 749 Days
• Field of Search: 156/230, 156/241, 156/247, 156/249, 156/272.2, 156/273.3, 156/275.7, 156/289, 156/295, 29/831, 29/832, 438/26, 438/107, 438/118, 216/13, 216/20
• US Class Current: 156/241
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H05K 3/0058 Laminating printed circuit boards onto other substrates, e.g. metallic substrates H05K1/0281 takes precedence
• CPC Class Codes: H05K 3/0097 Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards H05K3/0052 takes precedence

Abstract

Process for transfer of a microstructure (12) from an initial substrate (10) to a final substrate (32). The process includes the following steps in sequence:

bonding between the initial substrate (10) and an intermediate substrate (24), the microstructure facing the intermediate substrate,

formation of at least one layer (30) of bond material on at least one selected region (16) of the initial substrate including the microstructure

bring the said selected region (16) into contact with the final substrate,

treatment of the bond material in an area corresponding to the selected region (16), to increase the bond force,

breaking the selected region (16) of the initial substrate, from the intermediate substrate (24).

Claims

1. Process for the selective transfer of at least one microstructure (12) formed on a substrate (10) called the initial substrate, to another substrate (32) called the final substrate, the process comprises the following steps in sequence:

a) preparing the initial substrate to enable reversible bonding, with an initial bond force, between the initial substrate (10) and a substrate (24) called the intermediate substrate,

(b) bonding of the initial substrate (10) with the intermediate substrate (24), the microstructure facing the intermediate substrate,

(c) forming a layer (30) of bond material on at least one selected region (16) of the initial substrate including the microstructure, and/or on a reception region (16'"'"') of the final substrate, the bond material having a bond capacity that may be locally increased by appropriate treatment,

(d) contacting the said selected region (16) of the initial substrate with the reception region on the final substrate,

(e) treating the layer of bond material in an area corresponding to the selected region (16) of the initial substrate, comprising the microstructure, to locally increase the bond force in this area to a value exceeding the initial bond force, to fix the said selected region (16) of the initial substrate onto the reception region (16'"'"') on the final substrate (32),

(f) breaking the bond between the selected region (16) of the initial substrate, including the microstructure, and the intermediate substrate (24), wherein portions of the initial substrate remain bonded to the intermediate substrate.

2. Transfer process according to claim 1, in which the initial substrate (10) is thinned before step c).

3. Transfer process according to claim 2, in which the initial substrate (10) is thinned by chemical and/or mechanical etching.

4. Transfer process according to claim 2, in which the initial substrate (10) is thinned by cleavage along a cleavage layer (11) previously implanted in the initial substrate (10).

5. Transfer process according to claim 1, in which the preparation of the initial substrate to enable reversible bonding includes the formation of controlled roughness on the surface of substrate (10).

6. Transfer process according to claim 1, in which preparation of the initial substrate to enable reversible bonding includes the formation of at least one initiating rupture in the initial substrate.

7. Transfer process according to claim 6, in which at least one trench (26) weakening the initial substrate (10) surrounding the said region (16) of the substrate containing the microstructure (12), is also formed before step d).

8. Transfer process according to claim 1, in which preparation of the initial substrate to enable reversible bonding includes the formation of one layer (18) called the rupture layer on the surface (14) of substrate (10), the rupture layer having a first thickness in an area facing the selected region (16) of the initial substrate, comprising a microstructure (12), and with a second thickness exceeding the first thickness in an area located around the selected region (16), wherein the first thickness area forms a recess (19) such that the first thickness area does not contact the intermediate substrate (24), said recess (19) resulting in a weak bond between the initial substrate (10) and the intermediate substrate (24).

9. Transfer process according to claim 8, in which the formation of the rupture layer (18) includes deposition on the surface (14) of the substrate (10), of a layer of a material that can be selectively etched with respect to the substrate, and partial selective etching of this layer to make it thinner in at least one area corresponding to the selected region (16) of the substrate, thus forming the recess (19).

10. Transfer process according to claim 8, in which at least one trench (26) formed to weaken the initial substrate (10), and the area of the rupture layer (18) with the first thickness, are laid out to coincide at least partially.

11. Transfer process according to claim 1, in which at least one trench (26) weakening the initial substrate (10) surrounding the said region (16) of the substrate containing the microstructure (12), is also formed before step d).

12. Transfer process according to claim 11, wherein an area of a rupture layer (18) is formed having a first thickness in an area facing the selected region (16) of the initial substrate, and the first thickness and the weakening trenches (26) are laid out to coincide at least partially.

13. Process according to claim 1, in which the bond material in the bond layer (30) is chosen from meltable materials and materials with a bond force that can be increased by exposure to appropriate radiation.

14. Process according to claim 1, in which marks visible through the intermediate substrate are formed on the final substrate, and marks visible trough the final substrate are formed on the intermediate substrate, the marks being used for alignment of the intermediate and final substrates before putting into contact in step d).

15. Transfer process according to claim 1, characterized in that it is completed by operations to electrically connect microstructure (12) with components previously formed on the final substrate (32).

16. Process according to claim 1, in which treatment of the layer of bond material in step e) includes exposure to radiation in the selected region (16) of the substrate including the microstructure.

17. Transfer process according to claim 16, in which a transparent intermediate structure (24) is used, and radiation is applied to the selected region (16) of the initial substrate including the microstructure (12) through the transparent substrate.

18. Transfer process according to claim 17, in which a transparent final substrate (32) is used, and the selected region (16) of the initial substrate including the microstructure (12) is exposed to radiation through the final substrate (32).

19. Transfer process according to claim 1, in which an electrically conducting bond material (30) is used to form at least one electrical connection between the said selected region (16) and the final substrate (32).