Active pixel sensor with inter-pixel function sharing
First Claim
Patent Images
1. An image sensor having a plurality of pixels comprising:
- a semiconductor material of a first conductivity type;
at least two adjacent pixels each of the pixels having photodetectors formed within the substrate; and
at least one electrical function integrated within the adjacent pixels that is shared between the adjacent pixels, wherein the electrical function is an electrical contact that is selected from one of the following components (a photogate contact, a transfer gate contact, a row select gate contact, an output node contact, or an amplifier contact).
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Abstract
An image sensor having a plurality of pixels comprising a semiconductor material of a first conductivity type with at least two adjacent pixels, each of the pixels has a photodetector formed within the substrate and an electrical function that is shared between the adjacent pixels integrated within the adjacent pixels. The electrical function can be: a transfer gate, a reset gate, a row select gate, an amplifier drain, an output node, a floating diffusion, a reset drain, a lateral overflow gate, an overflow drain or an amplifier, that is shared between multiple pixels resulting in a saving of space.
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Citations
6 Claims
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1. An image sensor having a plurality of pixels comprising:
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a semiconductor material of a first conductivity type; at least two adjacent pixels each of the pixels having photodetectors formed within the substrate; and at least one electrical function integrated within the adjacent pixels that is shared between the adjacent pixels, wherein the electrical function is an electrical contact that is selected from one of the following components (a photogate contact, a transfer gate contact, a row select gate contact, an output node contact, or an amplifier contact).
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2. An image sensor having a plurality of pixels comprising:
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a semiconductor material of a first conductivity type; and at least two adjacent pixels, each of the pixels having a photodetector formed within the substrate with a sense node, an amplifier, row select transistor, and reset transistor are integrated within the adjacent pixels such that they are shared by the adjacent pixels. - View Dependent Claims (3, 4)
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5. An image sensor having a plurality of pixels comprising:
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a semiconductor material of a first conductivity type; at least two adjacent pixels having photodetectors formed within the substrate such that each pixel has at least one electrical component integrated within the pixel, and a contact region that is shared by the electrical components of the adjacent pixels, wherein the electrical contact is selected from one of the following (a photogate contact, a transfer gate contact, a row select gate contact, an amplifier drain contact, or an amplifier contact). - View Dependent Claims (6)
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Specification