Monolithic inductor with guard rings
First Claim
Patent Images
1. A circuit including an inductor monolithically integrated in a semiconductor die, comprising:
- a semiconductor substrate;
a first layer of conductive material formed on the substrate and patterned to form a series of concentric patterns;
a layer of insulating material formed on the substrate over the first layer of conductive material;
a second layer of conductive material formed on the substrate over the layer of insulating material and patterned to form a conductor having successive patterns generally superposed and overlying corresponding patterns of the first conductive layer, so that at least one second layer pattern overlies at least one first conductive layer pattern; and
a unity gain voltage buffer associated with at least one pattern of said first layer of conductive material, said buffer having an output connected to the associated pattern of said first layer of conductive material and an input connected to an overlying pattern.
1 Assignment
0 Petitions
Accused Products
Abstract
An integrated circuit and method of fabrication are disclosed for achieving electrical isolation between a spiral inductor and an underlying silicon substrate using standard semiconductor manufacturing process flow. A spiral conductor with square windings is formed in metal layer (20) patterned so that straight runs of successive turns (22, 23, 24) overlie corresponding runs of concentric square rings (16, 17, 18) formed in underlying metal layer (14). A unity gain voltage buffer (30) connects each ring (16, 17, 18) with a respective overlying turn (22, 23, 24).
-
Citations
5 Claims
-
1. A circuit including an inductor monolithically integrated in a semiconductor die, comprising:
-
a semiconductor substrate; a first layer of conductive material formed on the substrate and patterned to form a series of concentric patterns; a layer of insulating material formed on the substrate over the first layer of conductive material; a second layer of conductive material formed on the substrate over the layer of insulating material and patterned to form a conductor having successive patterns generally superposed and overlying corresponding patterns of the first conductive layer, so that at least one second layer pattern overlies at least one first conductive layer pattern; and a unity gain voltage buffer associated with at least one pattern of said first layer of conductive material, said buffer having an output connected to the associated pattern of said first layer of conductive material and an input connected to an overlying pattern. - View Dependent Claims (2, 3, 4, 5)
-
Specification