High-frequency power amplifier

• US 6,160,453 A
• Filed: 12/23/1998
• Issued: 12/12/2000
• Est. Priority Date: 12/23/1998
• Status: Expired due to Term

• Current Assignee: Siemens Healthcare GMBH (Siemens AG)
• Original Assignee: Siemens AG
• Inventors: Vester, Markus, Feld, Peter, Kroeckel, Horst
• Primary Examiner(s): Lee, Benny
• Assistant Examiner(s): Choe, Henry
• Application Number:
  US09/220,111
• Time in Patent Office: 720 Days
• Field of Search: 330/289, 330/68, 330/65, 330/277, 257/706, 257/707, 257/712, 361/717, 361/718, 361/722, 361/704, 361/707, 361/723
• US Class Current: 330/289
• CPC Class Codes: H03F 3/265 with field-effect transistors only

Abstract

A high-frequency power amplifier has a high-frequency input, a high-frequency output and at least one power transistor connected therebetween. The power transistor has a first electrode serving as a control input, a cooling terminal connected to a second electrode and a third electrode. The third electrode is connected to a high-frequency reference potential conductor and the high-frequency reference potential conductor is connected in terms of high-frequency to the second electrode. An input signal applied to the high-frequency input is coupled out as an output signal at the high-frequency output.

Claims

1. A high-frequency power amplifier comprising:

a high-frequency input;

a high-frequency output;

at least one power transistor connected between said high-frequency input and high-frequency output, said power transistor having a first electrode serving as a control input, a second electrode connected to a cooling terminal and via which an operating voltage is supplied to said power transistor, and a third electrode;

a high-frequency reference potential conductor connected in terms of high frequency to said second electrode at a node so that said second electrode is free of high frequency voltage; and

said high-frequency output being connected across said node and said third electrode, whereby an input signal at said high-frequency input is coupled out as an output signal at said high-frequency output.

2. A high-frequency power amplifier as claimed in claim 1 further comprising a cooling member thermally conductively connected to said cooling terminal.

3. A high-frequency amplifier as claimed in claim 2 wherein said cooling terminal is electrically conductively connected to said cooling member.

4. A high-frequency amplifier as claimed in claim 2 wherein said cooling member comprises a plurality of ribs, and wherein said at least one power transistor is thermally conductively connected to one of said ribs.

5. A high-frequency power amplifier as claimed in claim 4 further comprising a spring connecting said at least one power transistor to said one of said ribs.

6. A high-frequency power transistor as claimed in claim 1 further comprising high frequency shielding connected to said cooling terminal.

7. A high-frequency power amplifier as claimed in claim 6 further comprising a cooling member thermally and electrically conductively connected to said cooling terminal, said cooling member comprising high-frequency shielding.

8. A high-frequency power amplifier as claimed in claim 1 further comprising a d.c. voltage source connected to said second electrode as said operating voltage.

9. A high-frequency power amplifier as claimed in claim 1 further comprising a cooling member thermally and electrically conductively connected to said cooling terminal, and further comprising a d.c. voltage source connected to said cooling member.

10. A high-frequency power amplifier as claimed in claim 1 further comprising a magnetically coupled transformer connected between said high-frequency input and said first electrode.

11. A high-frequency power amplifier as claimed in claim 1 further comprising a skin-effect current barrier connected between said high-frequency input and said first electrode.

12. A high-frequency power amplifier as claimed in claim 1 wherein said power transistor comprises a field effect transistor having a gate electrode comprising said first electrode, a drain electrode comprising said second electrode, and a source electrode comprising said third electrode.

13. A high-frequency power amplifier as claimed in claim 1 wherein said power transistor comprises a bipolar transistor having a base electrode comprising said first electrode, a collector electrode comprising said second electrode and an emitter electrode comprising said third electrode.