Ball grid array package and method using enhanced power and ground distribution circuitry
First Claim
1. A ball grid array substrate package comprising:
- a substrate dielectric having a first side, a second side, and a cavity formed therein and extending from said first side to said second side;
a power ring provided on the first side;
a ground ring provided on the first side;
a plurality of traces provided on the first side;
a solid, contiguous metal layer provided on the second side of the substrate dielectric, the metal layer electrically coupled to the first side; and
wherein a semiconductor die is situated in said cavity in said substrate dielectric.
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Accused Products
Abstract
A structure (10) is provided that is fabricated as a ball grid array substrate that includes a substrate dielectric (14), a power ring (18), a ground ring (20), a plurality of traces, and a second metal layer (16). The substrate dielectric (14) includes a first side, a second side, and a cavity formed therein. The power ring (18), the ground ring (20), and the plurality of traces are provided on the first side of the substrate dielectric (14). The plurality of traces, for example, may include a signal connection (22), a ground connection (24), and a power connection (26). The second metal layer (16) is provided on the second side of the substrate dielectric (14) and is electrically coupled to the first side. For example, the second metal layer (16) may serve as an active ground plane and electrically couple to a variety of ground connections, such as the ground connection (24), and the ground ring (20) through vias in the substrate dielectric (14). The present invention also provides a method for forming a ball grid array package using the structure (10).
379 Citations
26 Claims
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1. A ball grid array substrate package comprising:
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a substrate dielectric having a first side, a second side, and a cavity formed therein and extending from said first side to said second side; a power ring provided on the first side; a ground ring provided on the first side; a plurality of traces provided on the first side; a solid, contiguous metal layer provided on the second side of the substrate dielectric, the metal layer electrically coupled to the first side; and wherein a semiconductor die is situated in said cavity in said substrate dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor package comprising:
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a heat spreader/stiffener; a ball grid array substrate having a ground ring, a power ring, a plurality of traces, and an array of solder balls on a first side of a substrate dielectric, the array of solder balls coupled to the plurality of traces to provide an external connection to the ball grid array package, the ball grid array substrate having a solid, contiguous metal layer on a second side of the substrate dielectric that is electrically coupled to the first side and is mounted to the heat spreader/stiffener, the substrate dielectric having a cavity formed therein and extending from said first side to said second side; and a die mounted to the heat spreader/stiffener within the cavity of the ball grid array substrate, the die having at least one signal die bond pad coupled to a trace of the plurality of traces, at least one power die bond pad coupled to the power ring, and at least on ground die bond pad coupled to the ground ring. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. A method for forming a structure comprising the steps of:
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providing a substrate having a first metal layer on a first surface of a substrate dielectric and a solid, contiguous second metal layer on a second surface of the substrate dielectric; forming a power ring, a ground ring, and a plurality of traces using the first metal layer, each of the plurality of traces serving as either a ground connection, a signal connection, or a power connection; forming a cavity in the substrate so as to extend from said first surface to said second surface; forming vias that couple portions of the first metal layer to the second metal layer; and placing a semiconductor die in said cavity in said substrate. - View Dependent Claims (22, 23, 24, 25, 26)
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Specification