Blue vertical cavity surface emitting laser

• US 6,160,833 A
• Filed: 05/06/1998
• Issued: 12/12/2000
• Est. Priority Date: 05/06/1998
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Floyd, Philip D., Hofstetter, Daniel
• Primary Examiner(s): Arroyo, Teresa M.
• Assistant Examiner(s): Inzirillo, Gioacchino
• Application Number:
  US09/073,707
• Time in Patent Office: 951 Days
• Field of Search: 372/45, 372/43, 372/46, 372/96, 372/92, 257/94, 257/618
• US Class Current: 372/96
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 2304/00 Special growth methods for semiconductor lasers
• CPC Class Codes: H01S 2304/04 MOCVD or MOVPE
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/0213 Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/04256 characterised by the configuration
• CPC Class Codes: H01S 5/04257 having positive and negative electrodes on the same side of the substrate
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

The present invention provides an independently addressable, vertical cavity surface emitting laser ("VCSEL") in the blue wavelength range of 390 to 430 nanometers. The gallium nitride-based laser structure is grown by selective area epitaxy and lateral mask overgrowth. By appropriate patterning of a dielectric mask on the gallium nitride layer on a sapphire substrate, areas in a second gallium nitride layer can have a low defect density upon which the remainder of the laser structure can be formed.

Claims

1. A surface emitting laser for emitting coherent light in wavelength range of 390 to 430 nanometers comprising:

a sapphire substrate;

a first gallium nitride semiconductor layer formed on said sapphire substrate;

said first gallium nitride semiconductor layer having a first region, a second region and a third region;

a first reflector of dielectric materials formed on said first region of said first gallium nitride semiconductor layer;

a second reflector of dielectric materials formed on said third region of said first gallium nitride semiconductor layer;

a second gallium nitride semiconductor layer formed on said first reflector, said second reflector and said second region of said first gallium nitride semiconductor layer;

said second gallium nitride semiconductor layer formed on said first reflector having a low defect density, said second gallium nitride semiconductor layer formed on said second reflector having a low defect density and said second gallium nitride semiconductor layer formed on said first gallium nitride semiconductor layer having a high defect density;

said second gallium nitride semiconductor layer formed on said second region of said first gallium nitride semiconductor layer being between said second gallium nitride semiconductor layer formed on said first reflector and said second gallium nitride semiconductor layer formed on said second reflector;

a plurality of semiconductor layers formed on said second gallium nitride semiconductor layer formed on said first reflector;

one or more of said plurality of semiconductor layers forming an active region;

a third reflector of dielectric materials formed on said plurality of semiconductor layers, at least one of said first or third reflectors allowing a partial transmission of light emitted by said active region; and

a first electrode and a second electrode which enable biasing of said active region to emit coherent light in wavelength range of 390 to 430 nanometers.

2. The surface emitting laser of claim 1 wherein said plurality of semiconductor layers are gallium nitride or its alloys with indium and aluminum.

3. The surface emitting laser of claim 1 wherein said first reflector said second reflector and said third reflector are distributed Bragg reflectors.

4. The surface emitting laser of claim 1 wherein said first electrode is formed on a portion of said plurality of semiconductor layers.

5. The surface emitting laser of claim 1 wherein said second electrode is formed on said second gallium nitride semiconductor layer.

6. The surface emitting laser of claim 1 wherein said second electrode is formed on said first gallium nitride semiconductor layer.