Method of inhibiting deposition of material on an internal wall of a chemical vapor deposition reactor

• US 6,162,499 A
• Filed: 08/31/1998
• Issued: 12/19/2000
• Est. Priority Date: 06/24/1996
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej S., Iyer, Ravi, Westmoreland, Donald L.
• Primary Examiner(s): King, Roy V.
• Application Number:
  US09/144,484
• Time in Patent Office: 841 Days
• Field of Search: 427/239, 427/237, 427/238, 427/250, 427/248.1, 427/255.7, 427/255.31
• US Class Current: 438/579
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof

Abstract

A method of inhibiting deposition of material on a wall of a chemical vapor deposition reactor includes providing a chemical vapor deposition reactor having a wall which has an inside facing surface, the inside facing surface at least partially defining a chemical vapor deposition reactor chamber; forming a first material atop the inside facing surface; positioning a substrate in the chemical vapor deposition a reactor chamber, the substrate having an outer surface; and chemical vapor depositing a second material layer on the substrate in a manner which is selective to the substrate outer surface, and not the first material, thereby restricting deposition of the second layer on the reactor inside facing surface.

Claims

1. A method of inhibiting deposition of material on an internal wall of a chemical vapor deposition reactor, comprising:

providing a chemical vapor deposition reactor having a wall which has a metallic inside facing surface, the inside facing surface at least partially defining a chemical vapor deposition reactor chamber, and wherein the inside facing surface of the chemical vapor deposition reactor wall is electrically conductive;

forming a first material layer atop the inside facing surface of the chemical vapor deposition reactor chamber before loading a substrate to be processed into the chemical vapor deposition reactor chamber, and wherein the first material layer comprises an electrically insulative metallic oxide, and wherein the step of forming the first material layer consumes the metallic inside facing surface, and wherein the first material layer has a thickness of about 10 to about 50 angstroms;

after forming the first material layer, positioning the substrate in the chemical vapor deposition reactor chamber, the substrate having an outer surface; and

after positioning the substrate in the chemical vapor deposition reactor chamber, chemical vapor depositing a second material layer on the substrate, and wherein the second material layer is selected from the group consisting essentially of aluminum, titanium, tungsten, and compounds of aluminum, titanium, tungsten and mixtures thereof, and wherein the depositing manner of the second material layer is selective to the outer surface of the substrate, and not the first material layer thereby restricting deposition of the second layer on the reactor metallic inside facing surface, and wherein the first and second material layers are different, and wherein the first material is formed to a given thickness, and is successively applied on the inside facing surface of the chemical vapor deposition reactor wall between discrete second material layer depositions.