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Method for manufacturing thin films of multi-element group oxide or nitride

  • US 6,162,501 A
  • Filed: 01/29/1999
  • Issued: 12/19/2000
  • Est. Priority Date: 03/17/1998
  • Status: Expired due to Term
First Claim
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1. A method for manufacturing a thin film formed from a multi-element group oxide, comprising the steps of:

  • (a) loading into a reaction chamber a semiconductor substrate on which an under-layer is formed;

    (b) supplying precursors containing elements for later forming an oxide layer, into the reaction chamber;

    (c) reacting an oxidizing gas supplied into the reaction chamber with the precursors to form an oxide layer on the under-layer; and

    (d) after the oxidizing gas has reacted with the precursor to form the oxide layer, supplying an organic ligand into the reaction chamber to improve planarity of the surface of the oxide layer.

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