Method for manufacturing thin films of multi-element group oxide or nitride
First Claim
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1. A method for manufacturing a thin film formed from a multi-element group oxide, comprising the steps of:
- (a) loading into a reaction chamber a semiconductor substrate on which an under-layer is formed;
(b) supplying precursors containing elements for later forming an oxide layer, into the reaction chamber;
(c) reacting an oxidizing gas supplied into the reaction chamber with the precursors to form an oxide layer on the under-layer; and
(d) after the oxidizing gas has reacted with the precursor to form the oxide layer, supplying an organic ligand into the reaction chamber to improve planarity of the surface of the oxide layer.
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Abstract
A method of manufacturing thin films formed from multi-element group oxide includes supplying precursors containing elements later forming an oxide layer into a reaction chamber containing a semiconductor substrate on which an under-layer is formed, reacting an oxidizing gas supplied into the reaction chamber with the precursors to form the oxide layer on the under-layer, and supplying an organic ligand into the reaction chamber to improve planarity of the surface of the oxide layer.
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Citations
24 Claims
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1. A method for manufacturing a thin film formed from a multi-element group oxide, comprising the steps of:
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(a) loading into a reaction chamber a semiconductor substrate on which an under-layer is formed; (b) supplying precursors containing elements for later forming an oxide layer, into the reaction chamber; (c) reacting an oxidizing gas supplied into the reaction chamber with the precursors to form an oxide layer on the under-layer; and (d) after the oxidizing gas has reacted with the precursor to form the oxide layer, supplying an organic ligand into the reaction chamber to improve planarity of the surface of the oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing a thin film formed from a multi-element group nitride, comprising the steps of:
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(a) loading into a reaction chamber a semiconductor substrate on which an under-layer is formed; (b) supplying precursors containing elements for later forming a nitride layer, into the reaction chamber; (c) reacting a nitriding gas supplied into the reaction chamber with the precursors to form a nitride layer on the under-layer; and (d) after the nitriding gas has reacted with the precursor to form the nitride layer, supplying an organic ligand into the reaction chamber to improve planarity of the surface of the nitride layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification