Method for forming a fuse in integrated circuit application

• US 6,162,686 A
• Filed: 09/18/1998
• Issued: 12/19/2000
• Est. Priority Date: 09/18/1998
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Li, Ming-Hsin, Lee, Yu-Hua, Huang, Kuo Ching, Ying, Tse-Liang
• Primary Examiner(s): Dang, Trung
• Assistant Examiner(s): Kebede, Brook
• Application Number:
  US09/156,362
• Time in Patent Office: 823 Days
• Field of Search: 438/132, 438/215, 438/281, 438/333, 438/601, 438/714, 438/738, 438/421, 438/424, 438/614, 257/452, 257/503, 257/506, 257/508, 257/513, 257/518
• US Class Current: 438/281
• CPC Class Codes: H01L 23/5258 the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method of forming a grooved fuse (plug fuse) in the same step that via plugs are formed in the guard ring area 14 and in product device areas. A key point of the invention is to form fuses from the via plug layer, not from the metal layers. Also, key guard rings are formed around the plug guise. The invention can include the following: a semiconductor structure is provided having a fuse area, a guard ring area surrounding the fuse area; and a device area. First and second conductive strips are formed. First and second insulating layers are formed over the first and second conductive strips. Plug contacts and fuse plugs are formed through the first and second insulating layers to the first and second conductive strips. A third insulating layer is formed over the second insulating layer. Metal lines are formed over the third insulating layer in the device area. A fuse via opening is formed in the third insulating layer. A plug fuse is formed in the fuse via opening. A fourth insulating layer is formed over the plug fuse and the third insulating layer. A fuse opening is formed at least partially though the fourth insulating layer over the fuse area.

Claims

1. A method of fabricating of a grooved fuse comprised of a plug layer comprising the steps of:

a) providing a semiconductor structure having a fuse area, and a device area;

b) forming a first conductive layer over said fuse area;

said first conductive layer comprised of first and second conductive strips;

c) forming a plurality of insulating layers having (a) fuse plug contacts to said first and second conductive strips, and (b) device plugs in said device area;

said fuse plug contacts electrically connected to said first and second conductive strips;

said fuse plug contacts composed of a non-corroding material;

d) forming a dielectric layer over said plurality of insulating layers and fuse plug contacts;

e) etching a fuse via opening in said dielectric layer;

f) forming a plug fuse in said fuse via opening and simultaneously forming plugs in said device area;

said plug fuse is electrically connected to said fuse plug contacts;

g) forming a plurality of passivation layers, metal layers and plugs, over said plug fuse and said dielectric layer to form device interconnects in said device area.

2. A method of fabricating of a grooved fuse comprised of a plug layer comprising the steps of:

a) providing a semiconductor structure having a fuse area, a guard ring area surrounding said fuse area; and

a device area;

b) forming a first conductive layer over said fuse area;

said first conductive layer comprised of first and second conductive strips;

c) forming a plurality of insulating layers having (a) fuse plug contacts to said first and second conductive strips, (b) device plugs in said device area and (c) ring plugs in said guard ring area;

said fuse plug contacts electrically connected to said first and second conductive strips;

said fuse plug contacts composed of a non-corroding material;

d) forming a dielectric layer over said plurality of insulating layers and fuse plug contacts;

e) etching a fuse via opening in said dielectric layer;

f) forming a plug fuse in said fuse via opening and simultaneously forming plugs in said device area;

said plug fuse is electrically connected to said fuse plug contacts;

g) forming a plurality of passivation layers, metal layers and plugs, over said plug fuse and said dielectric layer to form device interconnects in said device area, a guard ring comprised of said ring plugs.

3. The method of claim 2 which further includes simultaneously forming a guard ring in said guard ring area using only said plugs and ring plugs formed from non-corroding material.

4. The method of claim 2 which further includes simultaneously forming a guard ring in said guard ring area using only plugs formed from tungsten.

5. The method of claim 2 which further includes simultaneously forming a guard ring in said guard ring area;

said guard ring formed of plugs and metal layers.

6. A method of fabricating of a grooved fuse comprised of a plug material comprising the steps of:

a) providing a semiconductor structure having a fuse area, a guard ring area surrounding said fuse area; and

a device area;

b) forming a first conductive layer over said fuse area;

said first conductive layer comprised of first and second conductive strips;

c) forming a first insulating layer over said first and second conductive strips;

d) forming a second insulating layer over said first insulating layer;

e) forming plug contacts through an overlying first and second insulating layers to said first and second conductive strips; and

forming device plug contacts in said device area;

f) forming a third insulating layer over said second insulating layer;

g) forming metal lines over said third insulating layer in said device area;

h) forming a fuse via opening in said third insulating layer and

i) forming a plug fuse in said fuse via opening;

j) forming a fourth insulating layer over said plug fuse and said third insulating layer; and

k) forming a fuse opening at least partially though said fourth insulating layer over said fuse area.

7. The method of claim 6 wherein said first conductive layer is comprised of polysilicon.

8. The method of claim 6 wherein said plug fuse composed of a material selected from the group consisting of tungsten, tungsten -alloys, titanium tungsten, and titanium.

9. A method of fabricating of a plug fuse comprised of plug metal and forming a guard ring around said plug fuse, comprising the steps of:

a) providing a semiconductor structure having a fuse area, a guard ring area surrounding said fuse area, and a device area;

b) forming a first conductive layer over fuse area in a semiconductor structure;

said first conductive layer comprised of first and second conductive strips;

c) forming a interlevel dielectric layer over said first and second conductive strips;

d) forming first contact openings in said interlevel dielectric layer exposing portions of said first and second conductive strips in said fuse area;

e) forming a fuse contact plug in said first contact openings contacting said first and second conductive strips;

f) forming a first metal ring in said guard ring area on said interlevel dielectric layer surrounding said fuse area;

g) forming a first inter metal dielectric layer over said contact plug and said interlevel dielectric layer;

h) forming first via ring openings in said first inter metal dielectric layer exposing said first metal ring and forming first via fuse openings exposing said contact plugs in said fuse area;

i) forming first plug rings in said first via ring openings and forming first fuse plugs in said first via fuse openings;

j) forming a second metal ring on said first plug rings;

k) forming a second inter metal dielectric layer over said first inter metal dielectric layer, said second metal ring and said first fuse plugs;

l) forming a second via ring opening over said second metal ring through said second inter metal dielectric layer and forming a fuse opening over said fuse area exposing said first fuse plugs;

m) forming a second plug ring in said second via ring opening and forming a plug fuse in said fuse opening contacting said first fuse plugs;

said plug fuse electrically connected to first and second conductive strips;

n) forming a third metal ring on said second plug ring;

o) forming a third inter metal dielectric layer over said second inter metal dielectric layer;

p) forming third via ring openings over said third metal ring;

q) forming a third plug ring in said third via openings contacting said third metal ring;

r) forming a fourth metal ring on said third inter metal dielectric layer contacting said third plug ring;

s) forming a passivation layer over said third inter metal dielectric layer;

t) forming a fuse widow at least partially through said passivation layer and said third inter metal dielectric layer.

10. The method of claim 9 wherein said first conductive layer comprised of polysilicon.

11. The method of claim 9 wherein said contact plug composed of a material selected from the group consisting of tungsten, titanium tungsten, and titanium.

12. The method of claim 9 wherein said plug fuse is formed of plug materials composed of a material selected from the group consisting of tungsten, titanium tungsten, and titanium.