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White light-emitting diode and method of manufacturing the same

  • US 6,163,038 A
  • Filed: 05/14/1998
  • Issued: 12/19/2000
  • Est. Priority Date: 10/20/1997
  • Status: Expired due to Term
First Claim
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1. A white light-emitting diode comprising:

  • a substrate;

    a first layer of n-type semiconductor formed on the substrate and being divided into a first section and a second section;

    a second layer of n-type semiconductor formed on the first section of the first layer of n-type semiconductor;

    a p-type semiconductor formed on the second layer of n-type semiconductor;

    a first electrode partially formed on the p-type semiconductor;

    a second electrode partially formed on the second section of the first layer of n-type semiconductor, such that when a current flows between the first electrode and the second electrode, a spectrum generated by an interface of the second layer of n-type semiconductor and the p-type semiconductor includes at least two peaks that can combine to produce white light.

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