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Semiconductor device having a metallic fuse member and cutting method thereof with laser light

  • US 6,163,062 A
  • Filed: 05/04/1998
  • Issued: 12/19/2000
  • Est. Priority Date: 10/27/1997
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a pair of non-metallic conductive members disposed on said semiconducting substrate;

    first to Nth (N≧

    2) metal wiring layers stacked through interlayer insulating film upward in sequence over said semiconductor substrate and said pair of non-metallic conductive members;

    at least one fuse member formed by said (N-1)th metal wiring layer, said at least one fuse member having ends electrically connected to said pair of non-metallic conductive members through contact holes, said at least one fuse member having a total length L and being cuttable by a laser light having a spot diameter D and an alignment error α

    ; and

    an insulating layer disposed over said Nth metal wiring layer, said insulating layer includingan opening having a diameter S directly above said fuse member, whereinL≦

    D-α

    , andS≧

    L.

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