Semiconductor device having a metallic fuse member and cutting method thereof with laser light

• US 6,163,062 A
• Filed: 05/04/1998
• Issued: 12/19/2000
• Est. Priority Date: 10/27/1997
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Taniguchi, Koji, Hachisuka, Atsushi, Ido, Yasuhiro, Genjo, Hideki, Shiratake, Shigeru
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Cao, Phat X.
• Application Number:
  US09/071,158
• Time in Patent Office: 960 Days
• Field of Search: 257/529, 257/530, 257/209, 438/281, 438/601
• US Class Current: 257/529
• CPC Class Codes: H01L 21/76888 By rendering at least a portion of the conductor non conductive, e.g. oxidation
• CPC Class Codes: H01L 23/5258 the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device has a plurality of fuse members (1a, 1b) composed of a metal that can be cut by laser light (4), disposed over a semiconductor substrate (5). The length L of the fuse members (1a, 1b) is smaller than a value obtained by subtracting an alignment error α of the laser light (4) from a spot diameter D of the laser light (4), i.e., the value (D-α). The fuse members (1a, 1b) are spaced a distance l larger than a value obtained by adding the alignment error α to the half of the spot diameter D, i.e., the value (D/2+α).

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

a pair of non-metallic conductive members disposed on said semiconducting substrate;

first to Nth (N≧

2) metal wiring layers stacked through interlayer insulating film upward in sequence over said semiconductor substrate and said pair of non-metallic conductive members;

at least one fuse member formed by said (N-1)th metal wiring layer, said at least one fuse member having ends electrically connected to said pair of non-metallic conductive members through contact holes, said at least one fuse member having a total length L and being cuttable by a laser light having a spot diameter D and an alignment error α

; and

an insulating layer disposed over said Nth metal wiring layer, said insulating layer including

an opening having a diameter S directly above said fuse member, wherein

L≦

D-α

, and

S≧

L.

2. The semiconductor device of claim 1, wherein S>

2L.

3. The semiconductor device of claim 1, wherein N is 2.

4. The semiconductor device of claim 1, wherein N≧

3.

5. The semiconductor device of claim 4, wherein said (N-1)th metal wiring layer form a stacked-via type structure with an (N-2)th metal wiring layer.

6. The semiconductor device of claim 1, wherein

said at least one fuse member comprises a first fuse member and a second fuse member adjacent to said first fuse member, said first and second fuse members being spaced apart by a distance l, wherein (D/2)+α

≦

l.

7. A semiconductor device comprising:

a semiconductor substrate;

a pair of non-metallic conductive members disposed on said semiconducting substrate;

first to Nth (N≧

3) metal wiring layers stacked through interlayer insulation films upward in sequence over said semiconductor substrate, said first to Nth metal wiring layers being disposed over said pair of non-metallic conductive members;

a fuse member formed by an (N-2)th metal wiring layer, said fuse member having ends electrically connected to said pair of non-metallic conductive members through contact holes, said fuse member having a total length L and being cuttable by a laser light having a spot diameter D and an alignment error α

; and

an opening having a diameter M provided in one of said interlayer insulation films between said Nth metal wiring layer and said (N-1)th metal wiring layer, directly above said fuse member, wherein

L≦

D-α

, and

M≧

2L.

8. The semiconductor device of claim 7, further comprising an insulating layer disposed over said Nth metal wiring layer and including an opening having a diameter S directly above said fuse member, wherein

S>

M.