High voltage detector to control a power supply voltage pump for a 2.5 volt semiconductor process device
First Claim
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1. A voltage detector circuit comprising:
- a first transistor (208) having a source to drain path coupling a first voltage potential (V2) line to a first node (n10);
a first current mirror comprising;
a first transistor (210) having a source to drain path coupled on a first end to the first node (n10) and on a second end to a third node (n14), and having a gate coupled to the third node (n14); and
a second transistor (214) having a source to drain path coupled on a first end to a second voltage potential (V1) line and on a second end to a fourth node (n11), and having a gate coupled to the gate of the first transistor (210) of the first current mirror;
a second current mirror comprising;
a first transistor (212) having a source to drain path coupled on a first end to the second voltage potential (V1) line and on a second end to a fifth node (n13), and having a gate coupled to the fifth node (n13); and
a second transistor (222) having a source to drain path coupled on a first end to the second voltage potential (V1) line and on a second end to a sixth node (n12), and having a gate coupled to the gate of the first transistor (212) of the second current mirror;
a second transistor (204) having a source to drain path coupling the third node (n14) to VSS, and having a gate receiving a voltage reference;
a third transistor (206) having a source to drain path coupling the fifth node (n13) to VSS, and having a gate receiving a voltage reference; and
a third current mirror comprising;
a first transistor (230) having a source to drain path with a first end coupled to the sixth node (n12) and a second end coupled to VSS, and having a gate coupled to the first end of its source to drain path; and
a second transistor (221) having a source to drain path with a first end coupled to the fourth node (nil) and a second end coupled to VSS, and having a gate coupled to the gate of the first transistor (230) of the fourth current mirror, the first end of the source to drain path of the second transistor (221) for providing an output signal for the voltage detector circuit indicating if a voltage potential at the first node (n10) is greater or less than the second voltage potential (V1) on the second voltage potential line.
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Abstract
A high voltage detector circuit (FIG. 2) maintains a voltage (V2) on a reference line driven by a charge pump by turning the charge pump on with a signal (PUMPON) when the reference line voltage (V2) drops below a reference voltage (V1) plus a CMOS transistor threshold voltage. The high voltage detector is further configured to use transistors which have a maximum gate to drain, or gate to source voltage which exceeds the pin supply voltage to the chip. The high voltage detector includes comparators made up of a series of current mirrors driven by weak current sources enabling the circuit to use a minimum amount of power.
32 Citations
11 Claims
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1. A voltage detector circuit comprising:
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a first transistor (208) having a source to drain path coupling a first voltage potential (V2) line to a first node (n10); a first current mirror comprising; a first transistor (210) having a source to drain path coupled on a first end to the first node (n10) and on a second end to a third node (n14), and having a gate coupled to the third node (n14); and a second transistor (214) having a source to drain path coupled on a first end to a second voltage potential (V1) line and on a second end to a fourth node (n11), and having a gate coupled to the gate of the first transistor (210) of the first current mirror; a second current mirror comprising; a first transistor (212) having a source to drain path coupled on a first end to the second voltage potential (V1) line and on a second end to a fifth node (n13), and having a gate coupled to the fifth node (n13); and a second transistor (222) having a source to drain path coupled on a first end to the second voltage potential (V1) line and on a second end to a sixth node (n12), and having a gate coupled to the gate of the first transistor (212) of the second current mirror; a second transistor (204) having a source to drain path coupling the third node (n14) to VSS, and having a gate receiving a voltage reference; a third transistor (206) having a source to drain path coupling the fifth node (n13) to VSS, and having a gate receiving a voltage reference; and a third current mirror comprising; a first transistor (230) having a source to drain path with a first end coupled to the sixth node (n12) and a second end coupled to VSS, and having a gate coupled to the first end of its source to drain path; and a second transistor (221) having a source to drain path with a first end coupled to the fourth node (nil) and a second end coupled to VSS, and having a gate coupled to the gate of the first transistor (230) of the fourth current mirror, the first end of the source to drain path of the second transistor (221) for providing an output signal for the voltage detector circuit indicating if a voltage potential at the first node (n10) is greater or less than the second voltage potential (V1) on the second voltage potential line. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A voltage detector circuit comprising:
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a first NMOS transistor (208) having a source to drain path coupling a first voltage potential (V2) line to a first node (n10); a first PMOS transistor (200) having a source to drain path coupling a second voltage potential (V1) line to a second node (n21), and having a gate connected to a third voltage potential (V3) line; a first current mirror comprising; a first PMOS transistor (210) having a source to drain path coupled on a first end to the first node (n10) and on a second end to a third node (n14), and having a gate coupled to the third node (n14); and a second PMOS transistor (214) having a source to drain path coupled on a first end to the second voltage potential (V1) line and on a second end to a fourth node (n11), and having a gate coupled to the gate of the first PMOS transistor (210) of the first current mirror; a second current mirror comprising; a first PMOS transistor (212) having a source to drain path coupled on a first end to the second voltage potential (V1) line and on a second end to a fifth node (n13), and having a gate coupled to the fifth node (n13); and a second PMOS transistor (222) having a source to drain path coupled on a first end to the second voltage potential (V1) line and on a second end to a sixth node (n12), and having a gate coupled to the gate of the first PMOS transistor (212) of the second current mirror; a third current mirror comprising; a first NMOS transistor (202) having a source to drain path coupling the second node (n21) to VSS, and having a gate coupled to the second node (n21); a second NMOS transistor (204) having a source to drain path coupling the third node (n14) to VSS, and having a gate coupled to the second node (n21); and a third NMOS transistor (206) having a source to drain path coupling the fifth node (n13) to VSS, and having a gate coupled to the second node (n21); and a fourth current mirror comprising; a first PMOS transistor (230) having a source to drain path with a first end coupled to the sixth node (n12) and a second end coupled to VSS, and having a gate coupled to the first end of its source to drain path; and a second PMOS transistor (221) having a source to drain path with a first end coupled to the fourth node (nil) and a second end coupled to VSS, and having a gate coupled to the gate of the first PMOS transistor (230) of the fourth current mirror, the first end of the source to drain path of the second PMOS transistor (221) for providing an output signal for the voltage detector circuit indicating if a voltage potential at the first node (n10) is greater or less than the second voltage potential (V1) on the second voltage potential line. - View Dependent Claims (9, 10, 11)
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Specification