Bit line cross-over layout arrangement
First Claim
1. In an integrated circuit, a memory array comprising:
- a first plurality of complementary bit line pairs vertically traversing across an array block, each pair comprising a first true bit line disposed adjacent to a first complement bit line; and
a second plurality of complementary bit line pairs vertically traversing across the array block, each pair comprisinga second true bit line and a second complement bit line disposed within the array block on opposite sides of a respective pair of the first plurality of complementary bit line pairs; and
a crossover structure disposed approximately half-way across the array block, wherein at the crossover structure the second true bit line and the second complement bit line interchange sides.
8 Assignments
0 Petitions
Accused Products
Abstract
A novel crossover arrangement reduces the area of a memory array by using only one crossover structure within each array block. Yet the total differential signal degradation for each respective true and complement bit line pair arising from coupling between the respective true bit line and the respective complement bit line as well as differential coupling to the respective true and complement bit lines from unrelated adjacent true or complement bit lines, is no worse than that resulting from a true bit line being adjacent to its complement bit line for their entire length. For one embodiment of the invention, each complementary pair of bit lines runs vertically within an array block from the top to the bottom of the array block. The true bit line and complement bit line of a first pair run adjacent to each other from the top to the bottom of the array block without any crossovers. The true bit line and complement bit line of a second pair do not run adjacent to each other, but instead straddle the first pair (i.e., both true and complement bit lines of the first pair lie between the true and complement bit lines of the second pair), with a single crossover half-way down the second bit line pair (vertically in the middle of the array block). This crossover arrangement repeats horizontally throughout each array block in groups of two pairs of bit lines (four physical bit line wires). By using this crossover arrangement, if guard cells are used only four groups of guard cells are needed in each array block-one each at the top and bottom of the array block, and one each at the top and bottom of the single crossover structure located preferably at the vertical center of the array block.
-
Citations
53 Claims
-
1. In an integrated circuit, a memory array comprising:
-
a first plurality of complementary bit line pairs vertically traversing across an array block, each pair comprising a first true bit line disposed adjacent to a first complement bit line; and a second plurality of complementary bit line pairs vertically traversing across the array block, each pair comprising a second true bit line and a second complement bit line disposed within the array block on opposite sides of a respective pair of the first plurality of complementary bit line pairs; and a crossover structure disposed approximately half-way across the array block, wherein at the crossover structure the second true bit line and the second complement bit line interchange sides. - View Dependent Claims (2, 3, 5, 40, 41)
-
-
4. In an integrated circuit, a memory array comprising:
-
a first plurality of complementary bit line pairs vertically traversing across an array block, each pair comprising a first true bit line disposed adjacent to a first complement bit line; a second plurality of complementary bit line pairs vertically traversing across the array block, each pair comprising a second true bit line and a second complement bit line disposed within the array block on opposite sides of a respective pair of the first plurality of complementary bit line pairs; and a crossover structure disposed approximately half-way across the array block, wherein at the crossover structure the second true bit line and the second complement bit line interchange sides; a first plurality of bit line sense amplifiers, each respectively coupled to a respective one of the first plurality of complementary bit line pairs and disposed at one end of the complementary bit line pairs; and a second plurality of bit line sense amplifiers, each respectively coupled to a respective one of the second plurality of complementary bit line pairs and disposed at the other end of the complementary bit line pairs.
-
-
6. In an integrated circuit, a memory array comprising:
-
a first pair of complementary bit lines comprising a first true bit line and a first complement bit line together vertically traversing at least a certain distance across the memory array, said first true bit line disposed adjacent to said first complement bit line; and a second pair of complementary bit lines comprising a second true bit line and a second complement bit line vertically traversing at least the certain distance across the memory array and horizontally straddling the first pair of complementary bit lines, whereby both the first true bit line and the first complement bit line are disposed between the second true bit line and the second complement bit line for substantially the certain distance; and a first crossover structure disposed at a position along the second pair of complementary bit lines corresponding to a first portion of the certain distance; wherein the second true bit line traverses across the memory array for the first portion of the certain distance disposed on a first side of the first pair of bit lines, then crosses over the first pair of bit lines at the first crossover structure and continues for a remaining portion of the certain distance disposed on a second side of the first pair of bit lines opposite the first side; and wherein the second complement bit line traverses across the memory array for the first portion of the certain distance disposed to the second side of the first pair of bit lines, then crosses over the first pair of bit lines and crosses over the second true bit line at the first crossover structure and continues for the remaining portion of the certain distance disposed to the first side of the first pair of bit lines. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 42, 43, 44, 45)
-
-
25. In an integrated circuit, a dynamic memory array comprising:
-
a first pair of complementary bit lines comprising a first true bit line and a first complement bit line together vertically traversing across an array block without crossovers, each of said first pair of complementary bit lines fabricated substantially from a given interconnect level and disposed substantially adjacent to, parallel to, and at a certain spacing from the other; and a second pair of complementary bit lines comprising a second true bit line and a second complement bit line fabricated substantially from the given interconnect level, said second true and second complement bit lines vertically traversing across the array block horizontally straddling the first pair of bit lines, whereby both the first true bit line and the first complement bit line are disposed between the second true bit line and the second complement bit line; and a first crossover structure vertically disposed at a position along the second pair of complementary bit lines approximately half-way across the array block; wherein the second true bit line traverses across the upper half of the array block disposed at the certain spacing from a first side of the first pair of bit lines, then crosses over the first pair of bit lines at the first crossover structure and traverses across the lower half of the array block disposed at the certain spacing from a second side of the first pair of bit lines opposite the first side; and wherein the second complement bit line traverses across the upper half of the array block disposed at the certain spacing from the second side of the first pair of bit lines, then crosses over the first pair of bit lines and crosses over the second true bit line at the first crossover structure and traverses across the lower half of the array block disposed at the certain spacing from the first side of the first pair of bit lines. - View Dependent Claims (26, 27, 28, 46)
-
-
29. In a memory array having a plurality of complementary bit line pairs, a method of reducing layout area of the memory array while affording, for each respective true and complement bit line pair, a total differential signal degradation, arising from coupling between the respective true bit line and the respective complement bit line as well as differential coupling to the respective true and complement bit lines from unrelated adjacent true or complement bit lines, which is no worse than that resulting from a true bit line being adjacent to its complement bit line for their entire length, said method comprising:
-
providing a first plurality of complementary bit line pairs vertically traversing across an array block, each pair comprising a first true bit line disposed adjacent to a first complement bit line; and providing a second plurality of complementary bit line pairs vertically traversing across the array block, each pair comprising a second true bit line and a second complement bit line disposed within the array block on opposite sides of a respective pair of the first plurality of complementary bit line pairs; and a crossover structure disposed approximately half-way across the array block, wherein at the crossover structure the second true bit line and the second complement bit line interchange sides; said total differential signal degradation being afforded using only a single row of said crossover structures. - View Dependent Claims (30, 31, 32, 33, 34, 35, 47, 48, 49)
-
-
36. In an integrated circuit, a memory array comprising:
-
a first complementary bit line pair comprising a first true bit line and a first complement bit line; a second bit line generally disposed between the first true bit line and the first complement bit line; and a third bit line adjacent to the second bit line and also generally disposed between the first true bit line and the first complement bit line; wherein the second and third bit lines together comprise a second complementary bit line pair; and wherein the first complementary bit line pair is associated with a first plurality of memory cells and the second complementary bit line pair is associated with a second plurality of memory cells different from the first plurality of memory cells. - View Dependent Claims (37, 38, 39, 50, 51)
-
-
52. In an integrated circuit, a memory array comprising:
-
a first plurality of complementary bit line pairs vertically traversing across an array block, each pair coupled to a respective one of a first plurality of bit line sense amplifiers, and each pair comprising a first true bit line disposed adjacent to a first complement bit line; and a second plurality of complementary bit line pairs vertically traversing across the array block, each pair coupled to a respective one of a second plurality of bit line sense amplifiers, and each pair comprising a second true bit line and a second complement bit line disposed within the array block on opposite sides of a respective pair of the first plurality of complementary bit line pairs; and a crossover structure disposed approximately half-way across the array block, wherein at the crossover structure the second true bit line and the second complement bit line interchange sides.
-
-
53. In an integrated circuit, a memory array comprising:
-
a first pair of complementary bit lines comprising a first true bit line and a first complement bit line together vertically traversing at least a certain distance across the memory array, said first true bit line disposed adjacent to said first complement bit line; and a second pair of complementary bit lines comprising a second true bit line and a second complement bit line vertically traversing at least the certain distance across the memory array and horizontally straddling the first pair of complementary bit lines, whereby both the first true bit line and the first complement bit line are disposed between the second true bit line and the second complement bit line for substantially the certain distance; and a first crossover structure disposed at a position along the second pair of complementary bit lines corresponding to a first portion of the certain distance; wherein one of the second true and complement bit lines traverses across the memory array for the first portion of the certain distance disposed on a first side of the first pair of bit lines, then crosses the first pair of bit lines at the first crossover structure and continues for a remaining portion of the certain distance disposed on a second side of the first pair of bit lines opposite the first side; and wherein the other of the second true and complement bit lines traverses across the memory array for the first portion of the certain distance disposed to the second side of the first pair of bit lines, then crosses the first pair of bit lines and said one of the second true and complement bit lines at the first crossover structure and continues for the remaining portion of the certain distance disposed to the first side of the first pair of bit lines.
-
Specification