Semiconductor device with a thickness of 1 MM or less

• US 6,166,431 A
• Filed: 08/22/1996
• Issued: 12/26/2000
• Est. Priority Date: 08/25/1995
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Fukuda, Masatoshi, Takahashi, Takuya, Iwasaki, Hiroshi, Ohmori, Jun, Jin, Takanori
• Primary Examiner(s): POTTER, ROY KARL
• Application Number:
  US08/701,425
• Time in Patent Office: 1,587 Days
• Field of Search: 257/666, 257/678, 257/679, 257/701, 361/761
• US Class Current: 257/679
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/49531 the additional leads being a wiring board
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 Monolayer substrate
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/1579 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

A semiconductor device with a thickness of 1 mm or less is disclosed, that comprises a frame plate main body with a thickness in the range from 0.1 mm to 0.25 mm, a semiconductor pellet disposed on a first surface of the frame plate main body and with a thickness in the range from 0.2 mm to 0.3 mm, an external connection lead, one end thereof being connected to a peripheral portion of the first surface of the frame plate main body, the other end thereof extending to the outside of the frame plate main body, a bonding wire for electrically connecting an electrode of the semiconductor pellet and a connection portion of the end of the external connection lead, and a sealing resin layer for covering and sealing at least a region including the semiconductor pellet, the bonding wire, and a connection portion.

Claims

1. A semiconductor device comprising:

a wiring board having

a first face and a second face, the first face having a first region and a second region surrounding the first region, the first region being recessed relative to the second region,

a first wiring pattern having connecting pads in the second region of the first face,

a second wiring pattern on the second face, and

connecting means for connecting the first wiring pattern and the second wiring pattern;

a semiconductor chip mounted in the first region of the first face of the wiring board, the semiconductor chip having a first face and a second face, and connecting electrodes on the first face;

bonding wires for connecting the connecting electrodes of the semiconductor chip and the connecting pads of the first wiring pattern;

a sealing member for sealing the semiconductor chip and the bonding wires formed on the first face of the wiring board; and

wherein the sealing member is formed by transfer molding in a mold to form the semiconductor device having a thickness of 1 mm or less, and a difference between a thickness of the sealing member at the portion of the semiconductor chip and a thickness of the sealing member at the second region of the first face of the wiring board is 0.2 mm or less.

2. A semiconductor device as set forth in claim 1, wherein the connecting pads and the connecting means are formed in the second region of the first face of the wiring board.

3. A semiconductor device as set forth in claim 1, wherein the wiring board has a thickness in the range from 0.3 mm to 0.5 mm.

4. A semiconductor device as set forth in claim 3, wherein the semiconductor chip has a thickness in the range from 0.2 mm to 0.3 mm.

5. A semiconductor device as set forth in claim 4, wherein the first region recessed from the second region has a depth in the range from 0.2 mm to 0.3 mm.

6. A semiconductor device as set forth in claim 1, wherein the plane area of the semiconductor chip is at least 40 mm².

7. A semiconductor device as set forth in claim 1, wherein a level of the second region of the first face of the wiring board is in a middle level between the first face and the second face of the semiconductor chip.

8. A semiconductor device as set froth in claim 1, wherein the wiring board is a resin board.

9. A semiconductor device according to claim 1, wherein all of the connecting electrodes of the semiconductor chip are located on the first face of the semiconductor chip.

10. A semiconductor device according to claim 1, wherein the semiconductor chip is adhered to the first region of the first face of the wiring board through an adhesive layer.

11. A semiconductor device according to claim 1, wherein the sealing member is formed of an epoxy resin.