Substrate for use in wafer attracting apparatus and manufacturing method thereof
First Claim
1. A substrate for use in a wafer attracting apparatus, said substrate comprises a ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein said attracting surface comprises a ductile worked surface, the ductile worked surface has concaved portions, a diameter of each of the concave portions is 0.1 μ
- m or less, and said attracting surface is so non-adherent that when a wafer is attracted onto the attracting surface of the substrate and released from the attracting surface, the number of particles adhering to that wafer is 9.3 or less per 1 cm2.
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Abstract
A wafer attracting apparatus includes a substrate made of a ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein the attracting surface is constituted by a ductile worked surface, the ductile worked surface has concave portions, a diameter of each of the concave portions is 0.1 μm or less, and when the wafer is attracted onto the attracting surface of the substrate and released therefrom, the number of particles attaching to that wafer is 9.3 or less per 1 cm2.
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Citations
12 Claims
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1. A substrate for use in a wafer attracting apparatus, said substrate comprises a ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein said attracting surface comprises a ductile worked surface, the ductile worked surface has concaved portions, a diameter of each of the concave portions is 0.1 μ
- m or less, and said attracting surface is so non-adherent that when a wafer is attracted onto the attracting surface of the substrate and released from the attracting surface, the number of particles adhering to that wafer is 9.3 or less per 1 cm2.
- View Dependent Claims (2, 3, 4, 12)
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5. A substrate for use in a wafer attracting apparatus, said substrate comprising a ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein said attracting surface comprises a ductile worked surface, a height different in ceramic grains exposed outside at said attracting surface is formed, said height difference is 0.5 μ
- m or less, and said attracting surface is so non-adherent that when a wafer is attracted onto the attracting surface of the substrate, the number of particles adhering to that wafer is 9.3 or less per 1 cm2.
- View Dependent Claims (6, 7, 8, 9)
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10. A substrate for use in a wafer attracting apparatus, said substrate being comprising ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein said attracting surface comprises a ductile worked surface, and when a wafer is attracted onto the attracting surface of the substrate, a maximum roughness Rmax of the ductile worked surface of the substrate is 0.1 μ
- m or less, and the number of particles adhering to that wafer is 9.3 or less per 1 cm2.
- View Dependent Claims (11)
Specification