Substrate for use in wafer attracting apparatus and manufacturing method thereof

• US 6,166,432 A
• Filed: 03/02/1998
• Issued: 12/26/2000
• Est. Priority Date: 03/06/1997
• Status: Expired due to Term

• Current Assignee: NGK Insulators Limited
• Original Assignee: NGK Insulators Limited
• Inventors: Inoue, Takahiro, Yamada, Naohito, Ohno, Masashi, Kato, Kouji
• Primary Examiner(s): Clark, Sheila V.
• Application Number:
  US09/034,021
• Time in Patent Office: 1,030 Days
• Field of Search: 251/701, 361/234, 279/128
• US Class Current: 257/701
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: Y10T 279/23 with magnetic or electrostatic means

Abstract

A wafer attracting apparatus includes a substrate made of a ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein the attracting surface is constituted by a ductile worked surface, the ductile worked surface has concave portions, a diameter of each of the concave portions is 0.1 μm or less, and when the wafer is attracted onto the attracting surface of the substrate and released therefrom, the number of particles attaching to that wafer is 9.3 or less per 1 cm².

Claims

1. A substrate for use in a wafer attracting apparatus, said substrate comprises a ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein said attracting surface comprises a ductile worked surface, the ductile worked surface has concaved portions, a diameter of each of the concave portions is 0.1 μ

m or less, and said attracting surface is so non-adherent that when a wafer is attracted onto the attracting surface of the substrate and released from the attracting surface, the number of particles adhering to that wafer is 9.3 or less per 1 cm².

2. The substrate for use in the wafer attracting apparatus according to claim 1, wherein a center line average surface roughness Ra of the attracting surface of the substrate is 0.01 μ

m or less.

3. The substrate for use in the wafer attracting apparatus according to claim 1, wherein said ceramic material is an aluminum nitride sintered body.

4. The substrate for use in the wafer attracting apparatus according to claim 1, wherein an electrode comprising a bulk material is integrally buried in the substrate.

12. A wafer attracting apparatus comprising the substrate set forth in claim 1.

5. A substrate for use in a wafer attracting apparatus, said substrate comprising a ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein said attracting surface comprises a ductile worked surface, a height different in ceramic grains exposed outside at said attracting surface is formed, said height difference is 0.5 μ

m or less, and said attracting surface is so non-adherent that when a wafer is attracted onto the attracting surface of the substrate, the number of particles adhering to that wafer is 9.3 or less per 1 cm².

6. The substrate for use in the wafer attracting apparatus according to claim 5, wherein said height difference is 0.3 μ

m or less.

7. The substrate for use in the wafer attracting apparatus according to claim 5, wherein a center line average surface height Ra of said attracting surface is 0.05 μ

m or less.

8. The substrate for use in the wafer attracting apparatus according to claim 5, wherein said ceramic material is an aluminum nitride sintered body.

9. The substrate for use in the wafer attracting apparatus according to claim 5, wherein an electrode comprising a bulk material is integrally buried in the substrate having a monolithic shape.

10. A substrate for use in a wafer attracting apparatus, said substrate being comprising ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein said attracting surface comprises a ductile worked surface, and when a wafer is attracted onto the attracting surface of the substrate, a maximum roughness Rmax of the ductile worked surface of the substrate is 0.1 μ

m or less, and the number of particles adhering to that wafer is 9.3 or less per 1 cm².

11. The substrate for use in the wafer attracting apparatus according to claim 10, wherein said ceramic material is an aluminum nitride sintered body.