High frequency semiconductor device
First Claim
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1. A high frequency semiconductor device, comprising:
- a substrate having a substantially flat principal surface configured for stable and reliable flip chip mounting, with a predetermined circuit pattern including at least an input line, an output line, and a ground electrode provided on the principal surface; and
a transistor which has a drain electrode, a source electrode, and a gate electrode and is mounted on the substrate by a flip chip mounting,wherein the source electrode and the ground electrode are connected to each other by a first bump in the flip chip mounting, anda through hole having a conductive pattern on an inside surface thereof, filled with a metal, for supplying a ground potential to the ground electrode is provided in at least in a portion of a region opposing to the drain electrode or the source electrode in the ground electrode.
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Abstract
A high frequency semiconductor device includes: a substrate having a substantially flat principal surface, with a predetermined circuit pattern including at least an input line, an output line, and a ground electrode provided on the principal surface; and a transistor which has a drain electrode, a source electrode, and a gate electrode and is mounted on the substrate by a flip chip mounting. The source electrode and the ground electrode are connected to each other by a first bump in the flip chip mounting.
41 Citations
17 Claims
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1. A high frequency semiconductor device, comprising:
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a substrate having a substantially flat principal surface configured for stable and reliable flip chip mounting, with a predetermined circuit pattern including at least an input line, an output line, and a ground electrode provided on the principal surface; and a transistor which has a drain electrode, a source electrode, and a gate electrode and is mounted on the substrate by a flip chip mounting, wherein the source electrode and the ground electrode are connected to each other by a first bump in the flip chip mounting, and a through hole having a conductive pattern on an inside surface thereof, filled with a metal, for supplying a ground potential to the ground electrode is provided in at least in a portion of a region opposing to the drain electrode or the source electrode in the ground electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A high frequency semiconductor device, comprising:
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a substrate having a substantially flat principal surface, with a predetermined circuit pattern including at least an input line, an output line, and a ground electrode provided on the principal surface; and a transistor which has a drain electrode, a source electrode, and a gate electrode and is mounted on the substrate by a flip chip mounting, wherein the source electrode and the ground electrode are connected to each other by a first bump in the flip chip mounting, wherein the transistor further comprises; a source electrode pad which is electrically connected to the source electrode by a source extension line, and a gate electrode pad which is electrically connected to the gate electrode by a gate extension line, and wherein a width of the source extension line at an overlapped area of the source extension line and the gate extension line is smaller than a width of the source electrode, and wherein a ratio of the width of the source extension line at the overlapped area of the source extension line and the gate extension line to the width of the source electrode is in the range of up to 0.5.
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Specification