Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers

• US 6,166,948 A
• Filed: 09/03/1999
• Issued: 12/26/2000
• Est. Priority Date: 09/03/1999
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Thomas, Luc, Parkin, Stuart Stephen Papworth
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Yoha, Connie C.
• Application Number:
  US09/390,596
• Time in Patent Office: 480 Days
• Field of Search: 365/173, 365/171, 365/8, 365/158
• US Class Current: 365/173
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/5607 using magnetic storage elements
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets

Abstract

An improved magnetic tunnel junction (MTJ) memory cell for use in a nonvolatile magnetic random access memory (MRAM) array has a free layer formed as two ferromagnetic films that are magnetostatically coupled antiparallel to one another by their respective dipole fields. The magnetostatic or dipolar coupling of the two ferromagnetic films occurs across a nonferromagnetic spacer layer that is selected to prevent exchange coupling between the two ferromagnetic films. The magnetic moments of the two ferromagnetic films are antiparallel to another so that the multilayer free layer structure has a reduced net magnetic moment. In the presence of an applied magnetic field, such as during writing to the cell, the moments of the two ferromagnetic films switch directions substantially simultaneously, so that the net magnetic moment of the multilayer free layer structure can have two possible orientations relative to the orientation of the fixed or pinned layer of the MTJ cell, thus resulting in the two stable magnetic states of the MTJ cell. The reduced net magnetic moment of the multilayer free layer structure reduces the magnetostatic coupling between the multilayer free layer and the pinned ferromagnetic layer in the MTJ cell, as well as the magnetostatic coupling between adjacent MTJ cells in the array. As a result, the cells, and thus the MRAM array, can be made smaller.

Claims

1. A magnetic tunnel junction device comprising:

a fixed ferromagnetic layer whose magnetic moment is fixed in a preferred direction in the presence of an applied magnetic field;

a free ferromagnetic multilayer comprising a first ferromagnetic film having its magnetic moment oriented in a first direction, a second ferromagnetic film having its magnetic moment oriented in a second direction substantially antiparallel to said first direction, and a nonferromagnetic spacer layer located between and in contact with said first and second ferromagnetic films and having a thickness sufficient to prevent exchange coupling between the first and second ferromagnetic films, the ferromagnetic multilayer having a net magnetic moment oriented substantially in one of said first and second directions in the absence of an applied magnetic field, and the magnetic moments of the first and second ferromagnetic films being magnetostatically coupled across the spacer layer so as to be free to rotate substantially simultaneously in the presence of an applied magnetic field so that the net magnetic moment of the ferromagnetic multilayer can be oriented in the other of said first and second directions in the presence of an applied magnetic field; and

an insulating tunneling layer located between and in contact with the fixed ferromagnetic layer and the free ferromagnetic multilayer for permitting tunneling current between the fixed ferromagnetic layer and the free ferromagnetic multilayer.

2. The magnetic tunnel junction device according to claim 1 wherein the first ferromagnetic film has a thickness t1 and a magnetization M1, the second ferromagnetic film has a thickness t2 and a magnetization M2, and wherein the magnetic moments per unit area (M1×

t1) and (M2×

t2) of the first and second ferromagnetic films, respectively, are different from one another.

3. The magnetic tunnel junction device according to claim 2 wherein the first and second ferromagnetic films are formed of the same material, and wherein t1 is different from t2.

4. The magnetic tunnel junction device according to claim 2 wherein the first and second ferromagnetic films are formed of different materials and wherein t1 and t2 are substantially the same thickness.

5. The magnetic tunnel junction device according to claim 2 wherein the first and second ferromagnetic films have coercivities Hc1 and Hc2, respectively, and wherein the first and second ferromagnetic films subject the other film to a dipolar field of magnitude Hd1 and Hd2 respectively and wherein the absolute value of (Hd1-Hd2) is greater than (Hc1+Hc2).

6. The magnetic tunnel junction device according to claim 1 further comprising an antiferromagnetic layer in contact with the fixed ferromagnetic layer for fixing the magnetic moment of the fixed ferromagnetic layer in said preferred direction by interfacial exchange coupling.

7. The magnetic tunnel junction device according to claim 1 wherein the spacer layer is a metallic material.

8. The magnetic tunnel junction device according to claim 7 wherein the spacer layer is selected from the group consisting of Cu, Pd, Pt, Rh, Ti, Cr, Ru and Os.

9. The magnetic tunnel junction device according to claim 7 wherein the spacer layer is a binary metallic material selected from the group consisting of Cu.sub.(1-x) Ni_x and Ni.sub.(1-x) Cr_x.

10. The magnetic tunnel junction device according to claim 7 wherein the spacer layer is a ternary metallic alloy of Ni--Fe--Cr.

11. The magnetic tunnel junction device according to claim 7 wherein the spacer layer is TiN.

12. The magnetic tunnel junction device according to claim 1 wherein the spacer layer is an insulating material.

13. The magnetic tunnel junction device according to claim 12 wherein the spacer layer is formed of Al₂ O₃.

14. The magnetic tunnel junction device according to claim 1 wherein the spacer layer is a semiconducting material.

15. The magnetic tunnel junction device according to claim 1 further comprising a substrate, and wherein the fixed ferromagnetic layer, the insulating tunneling layer and the free ferromagnetic multilayer are formed on the substrate, whereby tunneling current passes through the insulating tunneling layer in a direction generally perpendicular to the fixed ferromagnetic layer and free ferromagnetic multilayer when the fixed ferromagnetic layer and free ferromagnetic multilayer are connected to electrical circuitry.

16. A nonvolatile magnetic memory array of magnetic tunnel junction memory cells comprising:

a substrate;

a first set of generally parallel electrically conductive lines formed on the substrate;

a second set of generally parallel electrically conductive lines formed on the substrate generally perpendicular to the first set of lines to define a plurality of intersection regions;

an array of magnetic tunnel junction cells, each cell being formed at an intersection region on the substrate and comprising a magnetic tunnel junction device as claimed in claim 1.

17. A magnetic tunnel junction device comprising:

a fixed ferromagnetic layer whose magnetic moment is fixed in a preferred direction in the presence of an applied magnetic field;

a free ferromagnetic multilayer comprising (a) a first ferromagnetic film having a thickness t1, a magnetization M1 and a coercivity Hc1 and having its magnetic moment oriented in a first direction, (b) a second ferromagnetic film having a thickness t2, a magnetization M2 and a coercivity Hc2 and having its magnetic moment oriented in a second direction substantially antiparallel to said first direction, the magnetic moments per unit area (M1×

t1) and (M2×

t2) of the first and second ferromagnetic films, respectively, being different from one another, and (c) a nonferromagnetic spacer layer located between and in contact with said first and second ferromagnetic films and having a thickness sufficient to prevent exchange coupling between the first and second ferromagnetic films, and wherein the first and second ferromagnetic films separated by said spacer layer subject each other to a dipolar field of magnitude Hd1 and Hd2, respectively, the absolute value of (Hd1-Hd2) being greater than (Hc1+Hc2);

wherein the ferromagnetic multilayer has a net magnetic moment oriented substantially in one of said first and second directions in the absence of an applied magnetic field, and the magnetic moments of the first and second ferromagnetic films are magnetostatically coupled across said spacer layer so as to be free to rotate substantially simultaneously in the presence of an applied magnetic field so that the net magnetic moment of the ferromagnetic multilayer can be oriented in the other of said first and second directions in the presence of an applied magnetic field; and

an insulating tunneling layer located between and in contact with the fixed ferromagnetic layer and the free ferromagnetic multilayer for permitting tunneling current between the fixed ferromagnetic layer and the free ferromagnetic multilayer.