Single-side microelectromechanical capacitive accelerometer and method of making same

• US 6,167,757 B1
• Filed: 08/31/1999
• Issued: 01/02/2001
• Est. Priority Date: 09/08/1997
• Status: Expired due to Fees

• Current Assignee: Board of Regents of the University of Michigan (University of Michigan)
• Original Assignee: Board of Regents of the University of Michigan (University of Michigan)
• Inventors: Yazdi, Navid, Najafi, Khalil
• Primary Examiner(s): MOLLER, RICHARD ALAN
• Application Number:
  US09/386,656
• Time in Patent Office: 490 Days
• Field of Search: 735/143.2, 735/141.8
• US Class Current: 73/514.32
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/131 with electrostatic counterbalancing means
• CPC Class Codes: G01P 2015/0882 for providing damping of vibrations

Abstract

A high sensitivity, Z-axis, capacitive microaccelerometer having stiff sense/feedback electrodes and a method of its manufacture on a single-side of a semiconductor wafer are provided. The microaccelerometer is manufactured out of a single silicon wafer and has a silicon-wafer-thick proof mass, small and controllable damping, large capacitance variation and can be operated in a force-rebalanced control loop. One of the electrodes moves with the proof mass relative to the other electrode which is fixed. The multiple, stiffened electrodes have embedded therein damping holes to facilitate force-rebalanced operation of the device and to control the damping factor. Using the whole silicon wafer to form the thick large proof mass and using thin sacrificial layers to form narrow uniform capacitor air gaps over large areas provide large capacitance sensitivity. The manufacturing process is simple and thus results in low cost and high yield manufacturing. In one preferred embodiment, the fixed electrode includes a plurality of co-planar, electrically-isolated, conductive electrodes formed by thin polysilicon deposition with embedded vertical stiffeners. The vertical stiffeners are formed by refilling vertical trenches in the proof mass and are used to make the fixed electrode stiff in the sense direction (i.e. Z or input axis). The moving electrode is dimensioned and supported for movement on the proof mass so as to be stiff in the sense direction. In another embodiment both of the electrodes are electroplated. In yet another embodiment four support beams support the proof mass at an upper portion thereof and four support beams support the proof mass at a lower portion thereof.

Claims

1. A microelectromechanical capacitive accelerometer manufactured on a single-side of a semiconductor wafer, the accelerometer comprising:

a fixed electrode;

a movable proof mass having a top surface; and

a movable electrode attached to the top surface of the proof mass to move therewith, wherein the fixed electrode is suspended between the proof mass and the movable electrode.

2. The accelerometer as claimed in claim 1 wherein the accelerometer has an input axis and wherein both of the electrodes are sufficiently stiff to electrostatically force-balance proof-mass displacement due to acceleration along the input axis without substantial bending of the electrodes along the input axis.

3. The accelerometer as claimed in claim 2 wherein each of the electrodes includes a planar layer which is relatively thin along the input axis and wherein at least one of the planar layers is dimensioned and is formed of a material so that its electrode is stiff along the input axis.

4. The accelerometer as claimed in claim 1 wherein at least one of the electrodes includes an electroplated planar layer.

5. The accelerometer as claimed in claim 3 wherein the fixed electrode includes a plurality of stiffeners extending from its planar layer along the input axis to stiffen the fixed electrode.

6. The accelerometer as claimed in claim 3 wherein at least one of the planar layers has a plurality of damping holes formed completely therethrough.

7. The accelerometer as claimed in claim 1 wherein the proof mass is formed from a single silicon wafer having a predetermined thickness and wherein the thickness of the proof mass is substantially equal to the predetermined thickness.

8. The accelerometer as claimed in claim 5 wherein the stiffeners extend towards the proof mass from their planar layer and wherein the proof mass includes a plurality of cavities at its top surface, the stiffeners being received within the cavities and wherein the stiffeners and the proof mass have a substantially uniform, narrow air gap therebetween.

9. The accelerometer as claimed in claim 5 wherein at least one of the planar layers and the stiffeners are formed of a semiconductor silicon material.

10. The accelerometer as claimed in claim 1 wherein both of the electrodes are electroplated.

11. The accelerometer as claimed in claim 1 further comprising upper and lower beams for suspending the proof mass in spaced relationship from the fixed electrode.

12. The accelerometer as claimed in claim 3 wherein at least one of the planar layers and the proof mass are formed of different forms of semiconductor material.