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Chemically removable Cu CMP slurry abrasive

  • US 6,169,034 B1
  • Filed: 11/25/1998
  • Issued: 01/02/2001
  • Est. Priority Date: 11/25/1998
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • depositing a layer of Copper (Cu) or a Cu alloy;

    chemical mechanical polishing (CMP) the deposited Cu or Cu alloy with a slurry containing a particulate abrasive material having a hardness less than about Mohs 6; and

    chemically removing remaining particulate material after CMP with a dilute acidic solution without buffing or scrubbing.

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