Backside illuminated image sensor

• US 6,169,319 B1
• Filed: 11/17/1999
• Issued: 01/02/2001
• Est. Priority Date: 08/12/1999
• Status: Expired due to Term

• Current Assignee: Alidouble Inc.
• Original Assignee: Tower Semiconductor Limited
• Inventors: Malinovich, Yacov, Koltin, Ephie
• Primary Examiner(s): Munson, Gene M.
• Application Number:
  US09/441,766
• Time in Patent Office: 412 Days
• Field of Search: 257/228, 257/291, 257/292, 257/447, 257/460
• US Class Current: 257/447
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: Y10S 148/012 Bonding, e.g. electrostatic for strain gauges
• CPC Class Codes: Y10S 148/135 Removal of substrate

Abstract

A method for producing a back-illuminated CMOS image sensor including a matrix of pixels (e.g., CMOS APS cells) that are fabricated on a semiconductor substrate. The semiconductor substrate is secured to a protective substrate by an adhesive such that the processed (frontside) surface of the semiconductor substrate faces the protective substrate. With the protective substrate providing structural support, the exposed backside surface of the semiconductor substrate is then subjected to grinding and/or chemical etching, followed by optional chemical/mechanical processing, to thin the semiconductor substrate to a range of 10 to 15 microns. A transparent substrate (e.g., glass) is then secured to the backside surface of the semiconductor substrate, thereby sandwiching the semiconductor substrate between the transparent substrate and the protective substrate.

Claims

1. A backside illuminated image sensor comprising:

a semiconductor substrate having a first surface and a second surface;

a plurality of light-sensitive pixel regions formed on the first surface of the semiconductor substrate and including a photodiode diffusion region extending into the semiconductor substrate from the first surface;

a metal line formed adjacent the first surface of the semiconductor substrate;

a protective substrate secured to the semiconductor substrate such that the metal line is located between the protective substrate and the semiconductor substrate; and

a transparent substrate secured to the second surface of the semiconductor substrate such that the semiconductor substrate is sandwiched between the transparent substrate and the protective substrate;

wherein the semiconductor substrate has a thickness defined such that the light-sensitive pixel region is effectively exposed through the second surface.

2. The backside illuminated image sensor according to claim 1, further comprising a first adhesive layer located between the protective substrate and the semiconductor substrate, and a second adhesive layer located between the transparent substrate and the semiconductor substrate.

3. The back-illuminated image sensor according to claim 2, wherein each of the plurality of light-sensitive pixel regions further comprises:

a second diffusion region that is formed in the semiconductor substrate and spaced from the photodiode diffusion region;

a first polysilicon gate structure provided between the second diffusion region and the photodiode diffusion region;

a third diffusion region that is formed in the semiconductor substrate and spaced from the second diffusion region;

a second polysilicon gate structure that is provided between the second diffusion region and the third diffusion region;

a fourth diffusion region that is formed in the semiconductor substrate and spaced from third diffusion region;

a third polysilicon gate structure that is provided between the third diffusion region and the fourth diffusion region;

wherein the photodiode region is connected to the second polysilicon gate by a first metal line to form a source-follower transistor, and wherein the first metal line is located between the semiconductor substrate and the protective substrate.

4. The backside illuminated image sensor according to claim 1, wherein the thickness of the semiconductor substrate is in the range of 10 to 15 microns.

5. The backside illuminated image sensor according to claim 1, wherein the transparent substrate is glass.

6. The backside illuminated image sensor according to claim 1, further comprising a plurality of metal leads formed on the protective layer.