Power converter with clamping circuit
First Claim
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1. A power converting apparatus comprising:
- a circuit including at least one semiconductor switch;
a pair of DC terminals electrically connected to said semiconductor switch; and
a flywheel diode connected in a reverse direction and in parallel with said semiconductor switch;
wherein a clamping circuit is connected in parallel with said semiconductor switch, said clamping circuit including at least a diode connected in a reverse direction and in parallel with said semiconductor switch, said diode having a semiconductor substrate with a wider band gap than silicon, and the voltage impressed on said semiconductor switch is clamped at a voltage value higher than the voltage between said DC terminals and lower than the withstand voltage of said semiconductor switch, whereby the voltage impressed on said semiconductor switch is clamped at the breakdown voltage of said diode when said semiconductor switch turns off.
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Abstract
A power converting apparatus comprising a group of semiconductor switches and DC terminals electrically connected to the group of semiconductor switches, in which a clamping circuit is connected to the semiconductor switches or the DC terminals. Otherwise, a diode having a wide band gap is connected in parallel with a snubber diode or a snubber capacitor of a snubber circuit connected in parallel with the semiconductor switches. With such arrangement, an overvoltage or oscillating voltage impressed on the semiconductor switches is suppressed.
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Citations
18 Claims
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1. A power converting apparatus comprising:
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a circuit including at least one semiconductor switch;
a pair of DC terminals electrically connected to said semiconductor switch; and
a flywheel diode connected in a reverse direction and in parallel with said semiconductor switch;
wherein a clamping circuit is connected in parallel with said semiconductor switch, said clamping circuit including at least a diode connected in a reverse direction and in parallel with said semiconductor switch, said diode having a semiconductor substrate with a wider band gap than silicon, and the voltage impressed on said semiconductor switch is clamped at a voltage value higher than the voltage between said DC terminals and lower than the withstand voltage of said semiconductor switch, whereby the voltage impressed on said semiconductor switch is clamped at the breakdown voltage of said diode when said semiconductor switch turns off. - View Dependent Claims (2, 3, 4, 5, 6, 17)
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7. A power converting apparatus comprising:
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a group of semiconductor switches; and
a pair of DC terminals electrically connected to said group of semiconductor switches;
wherein a clamping circuit is connected between said DC terminals, said clamping circuit including at least one diode connected between said DC terminals in a reverse direction of at least one semiconductor switch of said groups of semiconductor switches, said diode having a semiconductor substrate with a wider band gap than silicon, and the voltage impressed on said at least one semiconductor switch is clamped at a voltage value higher than the voltage between said DC terminals and lower than the withstand voltage of said at least one semiconductor switch, whereby the voltage impressed on said at least one semiconductor switch is clamped at the breakdown voltage of said diode when said at least one semiconductor switch turns off. - View Dependent Claims (8, 9, 10, 18)
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11. A power converting apparatus comprising:
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a semiconductor switch; and
a snubber circuit, which is formed of a first diode and a capacitor connected in series, said snubber circuit being connected in parallel with said semiconductor switch;
wherein a second diode, which has a breakdown voltage lower than the withstand voltage of said first diode and has a semiconductor substrate whose band gap is wider than silicon, is connected in parallel with said first diode, and the parallel connecting of said second diode and said first diode is connected to said capacitor in series. - View Dependent Claims (12, 13, 14)
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15. A power converting apparatus comprising:
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a semiconductor switch; and
a snubber circuit, which is formed of a first diode and a capacitor connected in series, said snubber circuit being connected in parallel with said semiconductor switch;
wherein a second diode having a semiconductor substrate whose band gap is wider than silicon is connected in parallel with said capacitor, and the parallel connecting of said second diode and said capacitor is connected to said first diode in series. - View Dependent Claims (16)
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Specification