Power converter with clamping circuit

• US 6,169,672 B1
• Filed: 12/23/1998
• Issued: 01/02/2001
• Est. Priority Date: 07/03/1996
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Yatsuo, Tsutomu, Iwasaki, Takayuki, Kimura, Shin
• Primary Examiner(s): Wong, Peter S.
• Assistant Examiner(s): Laxton, Gary L.
• Application Number:
  US09/202,924
• Time in Patent Office: 741 Days
• Field of Search: 363/27, 363/56, 363/57, 363/58, 361/91.7, 361/91.6, 361/91.5, 361/91.8
• US Class Current: 363/56.05
• CPC Class Codes: H02M 1/34 Snubber circuits
• CPC Class Codes: H02M 1/344 Active dissipative snubbers
• CPC Class Codes: H02M 1/346 Passive non-dissipative snubbers
• CPC Class Codes: H02M 7/519 in a push-pull configuration H02M7/517 takes precedence
• CPC Class Codes: H03K 17/08144 in thyristor switches
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

A power converting apparatus comprising a group of semiconductor switches and DC terminals electrically connected to the group of semiconductor switches, in which a clamping circuit is connected to the semiconductor switches or the DC terminals. Otherwise, a diode having a wide band gap is connected in parallel with a snubber diode or a snubber capacitor of a snubber circuit connected in parallel with the semiconductor switches. With such arrangement, an overvoltage or oscillating voltage impressed on the semiconductor switches is suppressed.

Claims

1. A power converting apparatus comprising:

a circuit including at least one semiconductor switch;

a pair of DC terminals electrically connected to said semiconductor switch; and

a flywheel diode connected in a reverse direction and in parallel with said semiconductor switch;

wherein a clamping circuit is connected in parallel with said semiconductor switch, said clamping circuit including at least a diode connected in a reverse direction and in parallel with said semiconductor switch, said diode having a semiconductor substrate with a wider band gap than silicon, and the voltage impressed on said semiconductor switch is clamped at a voltage value higher than the voltage between said DC terminals and lower than the withstand voltage of said semiconductor switch, whereby the voltage impressed on said semiconductor switch is clamped at the breakdown voltage of said diode when said semiconductor switch turns off.

2. A power converting apparatus according to claim 1, wherein the withstand voltage of said semiconductor switch is over 1.5 times and under 2 times the voltage between said DC terminals.

3. A power converting apparatus according to claim 1, wherein said diode is an avalanche diode.

4. A power converting apparatus according to claim 1, wherein said semiconductor substrate is made of silicon carbide.

5. A power converting apparatus according to claim 1, wherein and the wafer area of said diode is less than {fraction (1/10)} of that of said flywheel diode.

6. A power converting apparatus according to claim 1, wherein and the outer size of said diode is less than ½

of that of said flywheel diode.

17. A power converting apparatus according to claim 1, wherein said circuit includes a plurality of said semiconductor switches, and further comprising a plurality of said clamping circuits, a respective one of said plurality of said clamping circuits being connected in parallel with a respective one of said plurality of said semiconductor switches.

7. A power converting apparatus comprising:

a group of semiconductor switches; and

a pair of DC terminals electrically connected to said group of semiconductor switches;

wherein a clamping circuit is connected between said DC terminals, said clamping circuit including at least one diode connected between said DC terminals in a reverse direction of at least one semiconductor switch of said groups of semiconductor switches, said diode having a semiconductor substrate with a wider band gap than silicon, and the voltage impressed on said at least one semiconductor switch is clamped at a voltage value higher than the voltage between said DC terminals and lower than the withstand voltage of said at least one semiconductor switch, whereby the voltage impressed on said at least one semiconductor switch is clamped at the breakdown voltage of said diode when said at least one semiconductor switch turns off.

8. A power converting apparatus according to claim 7, wherein the withstand voltage of said at least one semiconductor switch is over 1.5 times and under 2 times of the voltage between said DC terminals.

9. A power converting apparatus according to claim 7, wherein said diode is an avalanche diode.

10. A power converting apparatus according to claim 7, wherein said semiconductor substrate is made of silicon carbide.

18. A power converting apparatus according to claim 7, wherein a plurality of said clamping circuits is provided, a respective one of said plurality of clamping circuits including said at least one diode connected between said DC terminals in the reverse direction of a respective one of said group of semiconductor switches.

11. A power converting apparatus comprising:

a semiconductor switch; and

a snubber circuit, which is formed of a first diode and a capacitor connected in series, said snubber circuit being connected in parallel with said semiconductor switch;

wherein a second diode, which has a breakdown voltage lower than the withstand voltage of said first diode and has a semiconductor substrate whose band gap is wider than silicon, is connected in parallel with said first diode, and the parallel connecting of said second diode and said first diode is connected to said capacitor in series.

12. A power converting apparatus according to claim 11, wherein the wafer area of said second diode having a semiconductor substrate whose band gap is wider than silicon is less than {fraction (1/10)} of that of said first diode.

13. A power converting apparatus according to claim 11, wherein the outer size of said second diode having a semiconductor substrate whose band gap is wider than silicon is less than ½

of that of said first diode.

14. A power converting apparatus according to claim 11, wherein said semiconductor substrate is made of silicon carbide.

15. A power converting apparatus comprising:

a semiconductor switch; and

a snubber circuit, which is formed of a first diode and a capacitor connected in series, said snubber circuit being connected in parallel with said semiconductor switch;

wherein a second diode having a semiconductor substrate whose band gap is wider than silicon is connected in parallel with said capacitor, and the parallel connecting of said second diode and said capacitor is connected to said first diode in series.

16. A power converting apparatus according to claim 15, wherein said semiconductor substrate is made of silicon carbide.