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Solid-state memory with magnetic storage cells

  • US 6,169,686 B1
  • Filed: 11/20/1997
  • Issued: 01/02/2001
  • Est. Priority Date: 11/20/1997
  • Status: Expired due to Term
First Claim
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1. A memory, comprising:

  • array of magnetic storage cells each for storing a bit of information, each magnetic storage cell having an active layer for storing a rotatable magnetization and a reference layer having a fixed magnetization wherein the reference layers are provided by a set of magnetic films in the array arranged as continuous strips to prevent magnetic fields from emanating from the reference layers and affecting magnetic fields in the active layers;

    a set of top conductors coupled to the magnetic storage cells wherein a patterning step that formed the top conductors also patterned the magnetic storage cells.

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