Method for making ink-jet printer nozzles
First Claim
1. A method of etching a substrate with a top surface, a portion of the top surface defining a feature with a sidewall and a bottom, the method comprising:
- forming an etch stop in the substrate;
forming a layer of resist over the sidewall of the feature wherein a portion of the resist disposed on the sidewall portion of the feature has a front surface and a back surface, the back surface of the portion of the resist being oriented toward the sidewall of the surface feature, but not over at least a portion of the bottom of the feature; and
isotropically etching the substrate with a plasma to expose at least a portion of the back surface of the resist, wherein the etch stop limits the etching depth thereby forming a generally planar surface at the juncture of the bottom of the feature and the etch stop.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for forming a chamber or nozzle structure in a substrate. The chamber is formed by first creating a surface feature, such as a pit or trench, on the surface of the substrate. A layer of resist is applied to the sidewall of the surface feature and the substrate is isotropically etched such that the etch works back up the inside of the resist on the surface feature sidewall to form a re-entrant angle between the surface feature sidewall and the top of the chamber wall. This results in a chamber that is wider than the opening between the sidewalls of the surface feature. An anisotropic etch step may be performed before or after the isotropic etch step or steps to control the final shape of the chamber.
-
Citations
33 Claims
-
1. A method of etching a substrate with a top surface, a portion of the top surface defining a feature with a sidewall and a bottom, the method comprising:
-
forming an etch stop in the substrate;
forming a layer of resist over the sidewall of the feature wherein a portion of the resist disposed on the sidewall portion of the feature has a front surface and a back surface, the back surface of the portion of the resist being oriented toward the sidewall of the surface feature, but not over at least a portion of the bottom of the feature; and
isotropically etching the substrate with a plasma to expose at least a portion of the back surface of the resist, wherein the etch stop limits the etching depth thereby forming a generally planar surface at the juncture of the bottom of the feature and the etch stop. - View Dependent Claims (3, 26, 27, 28, 29, 30)
-
-
2. A method of etching a substrate with a top surface, a portion of the top surface defining a feature with a sidewall and a bottom, the method comprising:
-
forming a layer of resist over the sidewall of the feature wherein a portion of the resist disposed on the sidewall portion of the feature has a front surface and a back surface, the back surface of the portion of the resist being oriented toward the sidewall of the surface feature, but not over at least a portion of the bottom of the feature; and
isotropically etching the substrate with a plasma to expose at least a portion of the back surface of the resist, wherein the layer of resist comprises photoresist.
-
-
4. A method of forming a chamber in a material having an upper surface, the method comprising:
-
forming an etch stop in the substrate;
forming a resist layer on the upper surface, the material having a cavity extending below the upper surface, the cavity having a width, a bottom surface, and a sidewall;
patterning the resist layer to cover at least a first portion of the upper surface and at least a second portion of the sidewall, but leaving at least a third portion of the bottom surface exposed, wherein a portion of the resist disposed on the sidewall has a front surface and a back surface; and
isotropically etching the material to form a chamber below the cavity, thereby exposing at least a portion of the back surface of the resist, the chamber having a chamber width greater than the cavity width, wherein a chamber wall forms a re-entrant angle with the sidewall, wherein the etch stop limits the etching depth thereby forming a generally planar surface at the juncture of the bottom of the feature and the etch stop. - View Dependent Claims (6, 7, 11, 12, 13)
-
-
5. A method of forming a chamber in a material having an upper surface, the method comprising:
-
forming a resist layer on the upper surface, the material having a cavity extending below the upper surface, the cavity having a width, a bottom surface, and a sidewall;
patterning the resist layer to cover at least a first portion of the upper surface and at least a second portion of the sidewall, but leaving at least a third portion of the bottom surface exposed; and
isotropically etching the material to form a chamber below the cavity, the chamber having a chamber width greater than the cavity width, wherein a chamber wall forms a re-entrant angle with the sidewall, wherein the cavity is a pit.
-
-
8. A method of forming a chamber in a material having an upper surface, the method comprising:
-
forming a resist layer on the upper surface, the material having a cavity extending below the upper surface, the cavity having a width, a bottom surface, and a sidewall;
patterning the resist layer to cover at least a first portion of the upper surface and at least a second portion of the sidewall, but leaving at least a third portion of the bottom surface exposed; and
isotropically etching the material to form a chamber below the cavity, the chamber having a chamber width greater than the cavity width, wherein a chamber wall forms a re-entrant angle with the sidewall, wherein the material comprises an oxide. - View Dependent Claims (9)
-
-
10. A method of forming a chamber in a material having an upper surface, the method comprising:
-
forming a resist layer on the upper surface, the material having a cavity extending below the upper surface, the cavity having a width, a bottom surface, and a sidewall;
patterning the resist layer to cover at least a first portion of the upper surface and at least a second portion of the sidewall, but leaving at least a third portion of the bottom surface exposed; and
isotropically etching the material to form a chamber below the cavity, the chamber having a chamber width greater than the cavity width, wherein a chamber wall forms a re-entrant angle with the sidewall, wherein the material comprises silicon nitride.
-
-
14. A method of forming a nozzle structure, the method comprising:
-
forming a layer on a substrate, the layer having a surface;
forming an etch stop between the layer and the substrate;
forming a surface feature in the surface of the layer, the surface feature having a sidewall and a bottom surface;
covering at least a first portion of the sidewall of the surface feature and at least a second portion of the surface of the layer with a resist layer, leaving at least a third portion of the bottom surface of the surface feature exposed; and
isotropically etching the layer to form a chamber below the surface feature wherein the etch stop prevents etching into the substrate and wherein a chamber wall forms a re-entrant angle with the sidewall of the surface feature. - View Dependent Claims (15, 18, 19, 20, 24, 25, 31, 32, 33)
-
-
16. A method of forming a nozzle structure, the method comprising:
-
forming a layer on a substrate, the layer having a surface;
forming a surface feature in the surface of the layer, the surface feature having a sidewall and a bottom surface;
covering at least a first portion of the sidewall of the surface feature and at least a second portion of the surface of the layer with a resist layer, leaving at least a third portion of the bottom surface of the surface feature exposed; and
isotropically etching the layer to form a chamber below the surface feature wherein a chamber wall forms a re-entrant angle with the sidewall of the surface feature, wherein the layer comprises a ceramic. - View Dependent Claims (17)
-
-
21. A method of forming a nozzle structure, the method comprising:
-
forming a layer on a substrate, the layer having a surface;
forming a surface feature in the surface of the layer, the surface feature having a sidewall and a bottom surface;
covering at least a first portion of the sidewall surface feature and at least a second portion of the surface of the layer with a resist layer, leaving at least a third portion of the bottom surface of the surface feature exposed; and
isotropically etching the layer to form a chamber below the surface feature wherein a chamber wall forms a re-entrant angle with the sidewall of the surface feature, wherein the layer is formed by a chemical vapor deposition process.
-
-
22. A method of forming a nozzle structure, the method comprising:
-
forming a layer on a substrate, the layer having a surface;
forming a surface feature on the surface of the layer, the surface feature having a sidewall and a bottom surface;
covering at least a first portion of the sidewall of the surface feature and at least a second portion of the surface of the layer with a resist layer, leaving at least a third portion of the bottom surface of the surface feature exposed; and
isotropically etching the layer to form a chamber below the surface feature wherein a chamber wall forms a re-entrant angle with the sidewall of the surface feature, wherein the layer is formed by a spin on-glass process.
-
-
23. A method of forming a nozzle structure, the method comprising:
-
forming a layer on a substrate, the layer having a surface;
forming a surface feature in the surface of the layer, the surface feature having a sidewall and a bottom surface;
covering at least a first portion of the sidewall of the surface feature and at least a second portion of the surface of the layer with a resist layer, leaving at least a third portion of the bottom surface of the surface feature exposed; and
isotropically etching the layer to form a chamber below the surface feature wherein a chamber wall forms a re-entrant angle with the sidewall of the surface feature, wherein the layer is formed by a physical vapor deposition process.
-
Specification